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22 条记录 (耗时 0.024 秒)

    Semconductor memory device and method of programming the same
    1.
    发明申请
    Semconductor memory device and method of programming the same 有权
    半导体存储器件及其编程方法

    公开(公告)号：US20090122596A1

    公开(公告)日：2009-05-14

    申请号：US12073678

    申请日：2008-03-07

    申请人： In-Jun Hwang ,  Hyung-soon Shin ,  Seung-Jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-Jun Hwang ,  Hyung-soon Shin ,  Seung-Jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

    摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

    摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两个操作模式中的每一个，并且响应于所述至少两个操作模式定义连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

    Magnetic random access memories and methods of operating the same
    2.
    发明申请
    Magnetic random access memories and methods of operating the same 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US20110157971A1

    公开(公告)日：2011-06-30

    申请号：US12923376

    申请日：2010-09-17

    申请人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

    发明人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1697 ,  G11C8/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： A spin transfer torque magnetic random access memory (STT-MRAM) and includes: a memory cell and a reference cell configured to operate as a reference when data stored in the memory cell is read. The memory cell includes: a first magnetic tunneling junction (MTJ) element and a first transistor connected to the first MTJ element. The reference cell includes: second and third MTJ elements connected in parallel; and second and third transistors that are connected to the second and third MTJ elements, respectively. The STT-MRAM further includes a control circuit having a write circuit configured to supply write currents having opposite directions to the second and third MTJ elements.

    摘要翻译： 一种自旋传递转矩磁随机存取存储器（STT-MRAM），包括：存储单元和参考单元，被配置为当读取存储在存储单元中的数据时作为参考。 存储单元包括：第一磁隧道结（MTJ）元件和连接到第一MTJ元件的第一晶体管。 参考单元包括：并联连接的第二和第三MTJ元件; 以及分别连接到第二和第三MTJ元件的第二和第三晶体管。 STT-MRAM还包括具有写入电路的控制电路，该写入电路被配置为向第二和第三MTJ元件提供具有相反方向的写入电流。

    Magnetic random access memories and methods of operating the same
    4.
    发明授权
    Magnetic random access memories and methods of operating the same 有权
    磁性随机存取存储器及其操作方法

    公开(公告)号：US08194439B2

    公开(公告)日：2012-06-05

    申请号：US12923376

    申请日：2010-09-17

    申请人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

    发明人： Kwang-seok Kim ,  Hyung-soon Shin ,  Seung-jun Lee

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1697 ,  G11C8/14 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： A spin transfer torque magnetic random access memory (STT-MRAM) and includes: a memory cell and a reference cell configured to operate as a reference when data stored in the memory cell is read. The memory cell includes: a first magnetic tunneling junction (MTJ) element and a first transistor connected to the first MTJ element. The reference cell includes: second and third MTJ elements connected in parallel; and second and third transistors that are connected to the second and third MTJ elements, respectively. The STT-MRAM further includes a control circuit having a write circuit configured to supply write currents having opposite directions to the second and third MTJ elements.

    摘要翻译： 一种自旋传递转矩磁随机存取存储器（STT-MRAM），包括：存储单元和参考单元，被配置为当读取存储在存储单元中的数据时作为参考。 存储单元包括：第一磁隧道结（MTJ）元件和连接到第一MTJ元件的第一晶体管。 参考单元包括：并联连接的第二和第三MTJ元件; 以及分别连接到第二和第三MTJ元件的第二和第三晶体管。 STT-MRAM还包括具有写入电路的控制电路，该写入电路被配置为向第二和第三MTJ元件提供具有相反方向的写入电流。

    Semiconductor memory device and method of programming the same
    6.
    发明授权
    Semiconductor memory device and method of programming the same 有权
    半导体存储器件及其编程方法

    公开(公告)号：US07672154B2

    公开(公告)日：2010-03-02

    申请号：US12073678

    申请日：2008-03-07

    申请人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

    摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

    摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。