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公开(公告)号：US07557355B2
公开(公告)日：2009-07-07
申请号：US11229630
申请日：2005-09-20
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14636 , H01L27/14676
摘要： To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.
摘要翻译： 为了改善传感器复位方法，从而实现读取运动图像的高速率，本发明提供一种图像拾取装置和放射线图像拾取装置，包括：沿行和列方向排列在基板上的多个像素，每个 像素，具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线，其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间，偏置开关元件 设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。
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22.发明授权公开(公告)号：US07547890B2
公开(公告)日：2009-06-16
申请号：US11486102
申请日：2006-07-14
IPC分类号： G01T1/24
CPC分类号： H01L27/14643 , H01L27/14676
摘要： In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.
摘要翻译： 在图像拾取装置中，将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线，多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线，多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管，栅极布线和信号布线上。 保护层至少在同一时间形成。 然后，在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。
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公开(公告)号：US07541617B2
公开(公告)日：2009-06-02
申请号：US10538013
申请日：2004-02-10
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/14658 , H04N5/32
摘要： In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.
摘要翻译： 一种放射线摄像装置，包括：用于将辐射转换为电信号的传感器元件; 和连接到传感器元件的薄膜晶体管，连接到薄膜晶体管的传感器元件的电极设置在薄膜晶体管的上方，并且薄膜晶体管具有顶栅型结构，其中半导体层， 栅极绝缘层和栅极电极层依次层叠在基板上，使得薄膜晶体管的沟道部分被栅极电极保护，从而提供稳定的TFT特性，而不会导致任何TFT元件的导通 通过对应于来自传感器电极的输出的电位的波动对后门效应，从而大大提高图像质量。
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24.发明授权公开(公告)号：US07488948B2
公开(公告)日：2009-02-10
申请号：US10576349
申请日：2004-11-10
IPC分类号： G01T1/20
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。
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公开(公告)号：US20060071251A1
公开(公告)日：2006-04-06
申请号：US10538774
申请日：2004-02-10
IPC分类号： H01L31/113
CPC分类号： H01L27/12 , H01L27/14643 , H04N5/32
摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
摘要翻译： 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。
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26.发明申请Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 失效射线照相成像基片，放射成像装置和放射成像系统公开(公告)号：US20050274991A1
公开(公告)日：2005-12-15
申请号：US11147182
申请日：2005-06-08
IPC分类号： G01T1/20 , G01T1/24 , H01L27/14 , H01L27/144 , H01L27/146 , H01L27/148 , H01L31/09 , H04N5/32 , H04N5/335 , H04N5/369 , H04N5/374 , H04N5/376
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H01L27/14676 , H01L27/14687
摘要： A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.
摘要翻译： 一种放射线摄影成像装置，包括：光电转换基板，包括像素区域，其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件， 用于向光电转换元件施加偏压的偏置线，用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件，用于将辐射转换成能够由光电转换元件检测的光，所述波长转换元件根据包括像素区域的区域设置; 以及连接布线，其具有连接到至少一种类型的多条线的光电转换层，所述光电转换层的一种类型是偏置线，信号线和栅极线，其中至少一部分连接布线布置在 绝缘基板上的区域和绝缘基板的边缘。 利用这种布置，即使在制造过程中基板被充电，也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板，其不会因静电而导致的装置性能和装置破坏的劣化。
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公开(公告)号：US06765187B2
公开(公告)日：2004-07-20
申请号：US10178228
申请日：2002-06-25
IPC分类号： H01L2700
CPC分类号： H01L27/14663 , H01L27/1462 , H01L27/14625 , H01L31/02161 , H01L31/02322
摘要： Provided are imaging apparatus and radiation detecting apparatus with high sensitivity. An imaging apparatus has a photoelectric conversion layer 16 for converting incident light into charge, on an insulating substrate, an electrode layer 17 formed on the photoelectric conversion layer 16, and a protective layer 37 formed on the electrode layer 17, and satisfies relations of na−nb≦1.5 and nb−nc≦1.5 where na is a refractive index of the photoelectric conversion layer 16, nb a refractive index of the electrode layer 17, and nc a refractive index of the protective layer 37.
摘要翻译： 提供了具有高灵敏度的成像装置和放射线检测装置。 成像装置具有用于将入射光转换成电荷的光电转换层16，绝缘基板上形成的电极层17和形成在电极层17上的保护层37，并且满足关系na -nb <= 1.5和Nb-nc <= 1.5其中Na是光电转换层16的折射率，nb是电极层17的折射率，nc是保护层37的折射率。
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公开(公告)号：US08154641B2
公开(公告)日：2012-04-10
申请号：US12245391
申请日：2008-10-03
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
摘要翻译： 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。
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公开(公告)号：US08084745B2
公开(公告)日：2011-12-27
申请号：US13010226
申请日：2011-01-20
IPC分类号： G01T1/24
CPC分类号： G01T1/241 , H01L27/14632 , H01L27/14658 , H01L27/14659 , H01L27/14663
摘要： A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.
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30.发明授权公开(公告)号：US07923695B2
公开(公告)日：2011-04-12
申请号：US12349733
申请日：2009-01-07
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。
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