IC socket and spring means of IC socket
    22.
    发明授权
    IC socket and spring means of IC socket 失效
    IC插座和IC插座的弹簧手段

    公开(公告)号:US06512388B1

    公开(公告)日:2003-01-28

    申请号:US09597033

    申请日:2000-06-20

    IPC分类号: G01R3102

    CPC分类号: G01R1/0433

    摘要: An IC socket with good durability that permits electrical tests on IC to be performed accurately over a long period of time is provided. An elastically deformable metal plate 12 is fixed within a spring accommodating portion 9 of a support board 2. The metal plate 12 is such that a plurality of spiral cantilevers 19 are formed so as to correspond to bumps 21 of the IC 10, and the flat tip 19a of the spiral cantilever supports an insulative resin film 3. When the IC 10 is pressed by an IC pressing part 54 and the bump 21 of the IC 10 flexibly deforms the spring part S via the insulative resin film 3, a contact pressure due to the elastic force of the spring part S occurs in the contact area between the bump 21 and contact pad 11.

    摘要翻译: 提供具有良好耐久性的IC插座,其允许在IC上进行电气测试以在长时间内精确地执行。 可弹性变形的金属板12固定在支撑板2的弹簧容纳部分9内。金属板12使得多个螺旋悬臂19形成为对应于IC 10的凸块21,并且平坦 螺旋悬臂的尖端19a支撑绝缘树脂膜3.当IC 10被IC按压部54按压并且IC 10的凸起21经由绝缘树脂膜3使弹簧部S弹性变形时, 在凸块21和接触垫11之间的接触区域中发生弹簧部分S的弹性力。

    Diamond sintered compact and a process for the production of the same
    24.
    发明授权
    Diamond sintered compact and a process for the production of the same 失效
    金刚石烧结体及其制造方法

    公开(公告)号:US5769176A

    公开(公告)日:1998-06-23

    申请号:US675932

    申请日:1996-07-05

    IPC分类号: B01J3/06 B22F7/06

    摘要: The present invention provides a diamond sintered compact having a higher strength as well as more excellent heat resistance, breakage resistance and corrosion resistance, as compared with those of the prior art, which thus can effectively be applied to tool materials for cutting or polishing of non-ferrous metals or ceramics, and edge materials of drill bits for excavating petroleum. The feature of the diamond sintered compact contains 0.1 to 30 volume % of at least one compound containing at least one element selected from the group consisting of silicon and titanium, and oxygen and the balance of diamond, for example, a titanate of a metal selected from the group consisting of iron, cobalt, nickel and manganese.

    摘要翻译: 本发明提供了与现有技术相比具有更高强度以及更优异的耐热性,耐破坏性和耐腐蚀性的金刚石烧结体,因此可有效地应用于用于切割或抛光非工具材料的工具材料 有色金属或陶瓷,以及用于挖掘石油的钻头的边缘材料。 金刚石烧结体的特征在于,含有0.1〜30体积%的至少一种含有选自硅和钛中的至少一种元素的化合物,氧和金刚石余量例如选自金属的钛酸盐 由铁,钴,镍和锰组成的组。

    Synthetic diamond heat sink
    25.
    发明授权
    Synthetic diamond heat sink 失效
    合成金刚石散热器

    公开(公告)号:US4617181A

    公开(公告)日:1986-10-14

    申请号:US621768

    申请日:1984-06-18

    IPC分类号: B01J3/06 H01L23/373 C01B31/06

    摘要: A synthetic diamond heat sink which can be easily shaped and which ensures a consistently high thermal conductivity in which the diamond is a Type Ib diamond containing 50 to 100 ppm nitrogen. The synthetic diamond crystal has a shape similar to the crystal structure of a hexahedron synthesized by heating a carbon source, a solvent and a diamond seed crystal and the stability region of diamond at a high pressure. The resulting temperature gradient between the carbon source and seed crystal is adjusted to cause diamond growth on the seed crystal. The solvent employed is selected from the group of cobalt, nickel, iron, chromium and manganese. The diamond crystal is caused to grow as the temperature of the solvent is gradually decreased at a rate of 0.15 to 10.degree. C. per hour so that the temperature of the seed crystal and growning diamond crystal is within a range the lower limit of which is a temperature 20.degree. C. higher than the melting point of the solvent and carbon source system and the upper limit of which is a temperature 40.degree. C. higher than the lower limit.

    摘要翻译: 一种合成金刚石散热器,可以容易地成型,并确保一贯的高导热性,其中金刚石是含有50至100ppm氮的Ib型金刚石。 合成金刚石晶体的形状类似于通过加热碳源,溶剂和金刚石晶种和金刚石在高压下的稳定区合成的六面体的晶体结构。 调节碳源和晶种之间的温度梯度,使得晶种上的金刚石生长。 所使用的溶剂选自钴,镍,铁,铬和锰。 随着溶剂的温度以0.15至10℃/小时的速率逐渐降低,使金刚石晶体生长,使得晶种和生长金刚石晶体的温度在其下限范围内 比溶剂和碳源系统的熔点高20℃,其上限比下限高40℃。