摘要:
A high purity synthetic diamond with less impurities, crystals defects, strains, etc. can be provided, in which the nitrogen content is at most 10 ppm, preferably at most 0.1 ppm and the boron content is at most 1 ppm, preferably at most 0.1 ppm or in which nitrogen atoms and boron atoms are contained in the crystal and the difference between the number of the nitrogen atoms and that of the boron atoms is at most 1.times.10.sup.17 atoms/cm.sup.3. The strain-free synthetic diamond can be produced by a process for the production of a strain-free synthetic diamond by the temperature gradient method, which comprises using a carbon source having a boron content of at most 10 ppm and a solvent metal having a boron content of at most 1 ppm and adding a nitrogen getter to the solvent metal, thereby synthesizing the diamond.
摘要翻译:可以提供具有较少杂质,晶体缺陷,应变等的高纯度合成金刚石,其中氮含量为至多10ppm,优选至多0.1ppm,硼含量为至多1ppm,优选至多0.1 ppm或其中氮原子和硼原子包含在晶体中,并且氮原子数与硼原子数之间的差异至多为1×10 17 atoms / cm 3。 无菌合成金刚石可以通过温度梯度法生产无应变合成金刚石的方法制备,该方法包括使用硼含量至多为10ppm的碳源和具有硼的溶剂金属 含量至多1ppm,并向溶剂金属中加入氮气吸收剂,从而合成金刚石。
摘要:
A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane. The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.
摘要:
An infrared optical part comprised of a synthetic diamond single crystal, and a method of making the same. The infrared optical part is comprised of a synthetic diamond having a nitrogen content of not more than 5 ppm and a boron content of not more than 3 ppm, wherein the parallelism between its light incident and reflecting surfaces is not more than one minute. The infrared optical part is used as a window member in infrared spectral analysis. It is also used in the form of a pair of anvils for holding a sample therebetween in connection with the measurement of transmitted light that has passed through the sample after the sample is compressed. The part is also used in the form of an infrared ATR prism. The method involves the steps of abrading an infrared optical part having the above mentioned nitrogen and boron content by a grinder, measuring the parallelism between the light incident and reflecting surfaces of the part by laser light, and smoothing the grinding apparatus, whereby the parallelism is set to a level of not more than 2.91.times.10.sup.-4 radians.
摘要:
A purple diamond has an absorption coefficient of the Ib type nitrogen at 500 nm, within the range of 0.2-2 cm.sup.-1, an absorption coefficient of the N-V center at an absorption peak of 570 nm, within the range of 0.3-10 cm.sup.-1, and absorption coefficients of the GR1 center, H2 center, H3 center, and H4 center which are less than 0.2 cm.sup.-1 in the visible region. A method of producing such a purple diamond uses as a starting material an Ib type artificial synthetic diamond crystal wherein the Ib type nitrogen content in the crystal is within the range of 8.times.10.sup.17 -1.4.times.10.sup.19 atoms/cm.sup.3, such a starting material is subjected to an electron beam irradiation of 5.times.10.sup.16 -2.times.10.sup.18 electrons/cm.sup.2 at 2-4 MeV, and then annealing the irradiated diamond in a vacuum of less than 10.sup.-2 Torr, at a temperature of 800.degree.-1100.degree. C. for more than 25 hours.
摘要:
A diamond laser formed of a synthetic diamond provides a high output power and a variable wavelength in the near infrared region. The maximum value of the optical density of H2 centers in the direction of the pumping light is in the range of 0.01 to 4. Laser action is caused in the range of 1000 to 1400 nm by an external pumping light at 650 to 950 nm. Such a diamond laser is produced by preparing a synthetic Ib type diamond having a nitrogen concentration within the range of 1.times.10.sup.17 to 8.5 10.sup.19 atoms/cm.sup.3, subjecting this synthetic diamond to an electron irradiation with a dose of not less than 5.times.10.sup.17 electrons/cm.sup.2, and heat-treating the synthetic diamond in a vacuum of not more than 1 Torr or in an inert gas atmosphere and at a temperature within the range of 1400.degree. to 1850.degree. C. If the threshold value of the pumping light intensity necessary for causing laser action is Ith then, to make the pumping light intensity I greater than Ith throughout the laser crystal, it is important, that the maximum value of the optical density of H2 is within the range between 0.01 and 4.
摘要:
A process for synthesizing a large diamond having a diameter of 8 mm or more by the temperature gradient method, wherein a (111) or (100) surface of a seed crystal having a diameter of 3 mm or more is used as a growing surface, the entire area of the growing surface is first dissolved in the diamond-stable region before crystal growth is started, the crystal growth is effected using a plug of a solvent in which the height of the central portion thereof is higher than the height of the peripheral portion thereof, the plug of a solvent has a planar or curved surface on the side where the plug of a solvent contacts a carbon source during the crystal growth, and the crystal growth is effected under such pressure and temperature conditions that the growth of the (111) or (100) surface is predominant.
摘要:
A synthetic single crystal diamond for wire drawing die; the process of manufacturing it and a wire drawing die to utilize it are disclosed. At least one plane of the diamond for wire drawing die is a cleavage plane of (111) faces, and the drawing hole of wire drawing die lies vertical to the cleavage plane.The diamond for the wire drawing die is produced by providing a synthetic single crystal having 20-400 ppm nitrogen of Ib type diamond. A groove is made on the diamond surface parallel to (111) faces employing energy beams such as a laser beam, an ion beam and an electron beam. A wedge is struck into the groove to cleave the diamond, and a plate is obtained. Furthermore, the plate is divided into polyhedrons, employing either an energy beam or a blade. The cleavage plane of the polyhedron is almost parallel to the (111) faces of crystal, therefore the cleavage plane is used as the standard plane to build the drawing hole.
摘要:
An illumination device comprising a reflecting plate, a single or a plural number of linear light source(s) arranged over said reflecting plate and a diffusing plate arranged over said light source(s), a light quantity adjusting means being arranged on the surface of the linear light source on between said light source(s) and said diffusing plate, and said illumination device being so adapted as to uniformalize luminance distribution on the diffusing plate by selecting shape and size of light-transmitting portions of the light quantity adjusting means.
摘要:
An illumination device comprising a reflecting plate, a single or a plural number of linear light source(s) arranged over said reflecting plate and a diffusing plate arranged over said light source(s), a light quantity adjusting means being arranged on the surface of the linear light source on between said light source(s) and said diffusing plate, and said illumination device being so adapted as to uniformalize luminance distribution on the diffusing plate by selecting shape and size of light-transmitting portions of the light quantity adjusting means.
摘要:
A hole-burning material which comprises at least one hole which is formed on a zero-phonone line and semi-permanently lasts without suffering from any change in the temperature range from 2 to 120 K. and which can be erased by irradiation of excited light having an energy larger than the zero-phonone line, in which the burnt holes have long life and deep depth and any single holes can be erased.