Abstract:
A joined product according to the present invention is a joined product including a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact or a diamond sintered compact serving as a second material to be joined. The first material to be joined and the second material to be joined are joined by a joining material that forms a liquid phase at a temperature exceeding 800° C. and lower than 1000° C. and that is placed between the first material to be joined and the second material to be joined. The first material to be joined and the second material to be joined are joined by resistance heating and pressing at a pressure of 0.1 to 200 MPa.
Abstract:
Various types of diamond tools are provided by utilizing the fact that a synthetic single crystal diamond for use in a tool having a nitrogen content of 3 ppm or less exhibits an enhanced hardness in a (100) plane in a direction and simultaneously the reduction in defects. The above synthetic single crystal diamond is synthesized by the temperature difference method under an ultra high pressure at high temperature and contains, in its crystals, nickel introduced by atomic substitution or boron and nickel introduced by atomic substitution.
Abstract:
A hole-burning material which comprises at least one hole which is formed on a zero-phonone line and semi-permanently lasts without suffering from any change in the temperature range from 2 to 120 K. and which can be erased by irradiation of excited light having an energy larger than the zero-phonone line, in which the burnt holes have long life and deep depth and any single holes can be erased.
Abstract:
A method of manufacturing a diamond laser crystal having an excellent laser efficiency is performed by first, preparing a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is then thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally annealing is performed on the synthetic diamond to form H3 centers by coupling the type IaA nitrogen atoms contained in the synthetic diamond, with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond at high concentration, while formation of NV centers which become an obstacle to laser action, can be suppressed.
Abstract:
A joined product has a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact serving as a second material to be joined, wherein: the first material to be joined and the second material to be joined are joined together via a joining material disposed therebetween and containing titanium (Ti); and a titanium nitride (TiN) compound layer having a thickness of 10-300 nm is produced at an interface between the second material to be joined and the joining material.
Abstract:
The present joined product is a joined product with a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact serving as a second material to be joined, wherein: the first material to be joined and the second material to be joined are joined together via a joining material disposed therebetween and containing titanium (Ti); and a titanium nitride (TiN) compound layer having a thickness of 10-300 nm is produced at an interface between the second material to be joined and the joining material.
Abstract:
To provide a diamond compact die semi-manufactured product and a diamond compact die that do not crack during die processing.A diamond compact die semi-manufactured product includes a diamond compact and a holding ring. The holding ring is a cylinder composed of a tungsten alloy, and the inner diameter thereof is tapered. The diamond compact is tapered so as to fit to the taper of the cylinder and the diamond compact is press-fitted to the holding ring. For lower cost production, the tapered face of the diamond compact is formed by electric spark machining. The tungsten alloy contains 90% to 97% by weight of tungsten and 3% to 10% by weight of nickel.
Abstract:
To provide a diamond compact die semi-manufactured product and a diamond compact die that do not crack during die processing. A diamond compact die semi-manufactured product includes a diamond compact and a holding ring. The holding ring is a cylinder composed of a tungsten alloy, and the inner diameter thereof is tapered. The diamond compact is tapered so as to fit to the taper of the cylinder and the diamond compact is press-fitted to the holding ring. For lower cost production, the tapered face of the diamond compact is formed by electric spark machining. The tungsten alloy contains 90% to 97% by weight of tungsten and 3% to 10% by weight of nickel.
Abstract:
A diamond laser formed of a synthetic diamond provides a high output power and a variable wavelength in the near infrared region. The maximum value of the optical density of H2 centers in the direction of the pumping light is in the range of 0.01 to 4. Laser action is caused in the range of 1000 to 1400 nm by an external pumping light at 650 to 950 nm. Such a diamond laser is produced by preparing a synthetic Ib type diamond having a nitrogen concentration within the range of 1.times.10.sup.17 to 8.5 10.sup.19 atoms/cm.sup.3, subjecting this synthetic diamond to an electron irradiation with a dose of not less than 5.times.10.sup.17 electrons/cm.sup.2, and heat-treating the synthetic diamond in a vacuum of not more than 1 Torr or in an inert gas atmosphere and at a temperature within the range of 1400.degree. to 1850.degree. C. If the threshold value of the pumping light intensity necessary for causing laser action is Ith then, to make the pumping light intensity I greater than Ith throughout the laser crystal, it is important, that the maximum value of the optical density of H2 is within the range between 0.01 and 4.
Abstract:
Various types of diamond tools are provided by utilizing the fact that a synthetic single crystal diamond for use in a tool having a nitrogen content of 3 ppm or less exhibits an enhanced hardness in a (100) plane in a direction and simultaneously the reduction in defects. The above synthetic single crystal diamond is synthesized by the temperature difference method under an ultra high pressure at high temperature and contains, in its crystals, nickel introduced by atomic substitution or boron and nickel introduced by atomic substitution.