摘要:
Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material.
摘要:
Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.
摘要:
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
摘要:
Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.
摘要:
Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups. The selected functional groups may include iminos, oximes, carboxylates, sulfonates, β-diketones, phosphine sulfides, phosphates, phosphites, phosphonates, phosphinates, phosphine oxides, monothio phosphinic acids, and dithio phosphinic acids.
摘要:
Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups. The selected functional groups may include iminos, oximes, carboxylates, sulfonates, β-diketones, phosphine sulfides, phosphates, phosphites, phosphonates, phosphinates, phosphine oxides, monothio phosphinic acids, and dithio phosphinic acids.
摘要:
A method for making trinitrotoluene is described, and which includes the steps of providing a source of aqueous nitric acid having a concentration of less than about 95% by weight; mixing a surfactant with the source of aqueous nitric acid so as to dehydrate the aqueous nitric acid to produce a source of nitronium ions; providing a supercritical carbon dioxide environment; providing a source of an organic material to be nitrated to the supercritical carbon dioxide environment; and controllably mixing the source or nitronium ions with the supercritical carbon dioxide environment to nitrate the organic material and produce trinitrotoluene.