公开(公告)号：US09371226B2

公开(公告)日：2016-06-21

申请号：US13019879

申请日：2011-02-02

申请人： Robert V. Fox ,  Fengyan Zhang ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun

发明人： Robert V. Fox ,  Fengyan Zhang ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun

IPC分类号： H01L31/02 ,  H01L31/18 ,  C01B17/00 ,  B82Y30/00 ,  C01G15/00 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0749

CPC分类号： B82Y30/00 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/40 ,  H01L31/0322 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

摘要： Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

摘要翻译： 将单源前体或单源前体的预共聚物进行微波辐射以形成I-III-VI2材料的颗粒。 这样的颗粒可以以纤锌矿相形成，并且可以通过例如暴露于热而转变成黄铜矿相。 纤锌矿相中的颗粒可以具有基本上六边形的形状，其能够堆叠成有序层。 纤锌矿相中的颗粒可以与黄铜矿相中的颗粒（即，黄铜矿纳米颗粒）混合，其可以填充纤锌矿相中颗粒的有序层内的空隙，从而产生具有良好覆盖率的膜。 在一些实施例中，所述方法用于形成包含I-III-VI2材料的半导体材料层。 可以使用这样的方法来制造诸如薄膜太阳能电池的装置。

公开(公告)号：US20130026535A1

公开(公告)日：2013-01-31

申请号：US13191062

申请日：2011-07-26

申请人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak

发明人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak

IPC分类号： H01L33/30 ,  H01L27/14 ,  H01L31/18 ,  B82Y99/00

CPC分类号： H01L31/0322 ,  B82Y20/00 ,  B82Y30/00 ,  G02B2207/101 ,  H01L31/0384 ,  H01L31/03923 ,  H01L31/0749 ,  Y02E10/541

摘要： Methods of forming photoactive devices include infiltrating pores of a solid porous ceramic material with a fluid, which may be a supercritical fluid, carrying at least one single source precursor therein. The single source precursor may be decomposed to form a plurality of particles within the pores of the solid porous ceramic material. Photoactive devices include a solid porous ceramic material exhibiting electrical conductivity, and a plurality of photoactive semiconductor particles within pores of the solid porous ceramic material.

摘要翻译： 形成光活性器件的方法包括具有流体的固体多孔陶瓷材料的渗透孔，流体可以是超临界流体，其中至少携带一个单一的源前体。 单源前体可以分解成在固体多孔陶瓷材料的孔内形成多个颗粒。 光活性器件包括表现出导电性的固体多孔陶瓷材料和固体多孔陶瓷材料孔内的多个光活性半导体颗粒。

公开(公告)号：US08324414B2

公开(公告)日：2012-12-04

申请号：US12646474

申请日：2009-12-23

申请人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun ,  Kelsey R. Margulieux ,  Andrew W. Holland

发明人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun ,  Kelsey R. Margulieux ,  Andrew W. Holland

IPC分类号： C07F15/00 ,  C07F9/02 ,  C07F1/00

CPC分类号： C07F9/5045 ,  C07F19/005

摘要： Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

摘要翻译： 形成单源前体（SSPs）的方法包括形成具有经验式½{L2N（μ-X）2M'X2} 2的中间产物，并使MER与中间产物反应形成式L2N（μ-ER）的SSP， 2M'（ER）2，其中L是路易斯碱，M是IA族原子，N是IB族原子，M'是IIIB原子，每个E是VIB族原子，每个X是VIIA族 原子或硝酸根，每个R基团是烷基，芳基，乙烯基，（全）氟烷基，（全）氟芳基，硅烷或氨基甲酰基。 形成聚合物或共聚物SSP的方法包括使HE1R1E1H和MER中的至少一种与一种或多种具有经验式L2N（μ-ER）2M'（ER）2或L2N（μ-X）2M'（X）2 以形成聚合物或共聚物SSP。 通过这种方法形成新的SSP和中间产品。

公开(公告)号：US20110152554A1

公开(公告)日：2011-06-23

申请号：US12646474

申请日：2009-12-23

申请人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun ,  Kelsey R. Margulieux ,  Andrew W. Holland

发明人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun ,  Kelsey R. Margulieux ,  Andrew W. Holland

IPC分类号： C07F1/08

CPC分类号： C07F9/5045 ,  C07F19/005

摘要： Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

摘要翻译： 形成单源前体（SSPs）的方法包括形成具有经验式½{L2N（μ-X）2M'X2} 2的中间产物，并使MER与中间产物反应形成式L2N（μ-ER）的SSP， 2M'（ER）2，其中L是路易斯碱，M是IA族原子，N是IB族原子，M'是IIIB原子，每个E是VIB族原子，每个X是VIIA族 原子或硝酸根，每个R基团是烷基，芳基，乙烯基，（全）氟烷基，（全）氟芳基，硅烷或氨基甲酰基。 形成聚合物或共聚物SSP的方法包括使HE1R1E1H和MER中的至少一种与一种或多种具有经验式L2N（μ-ER）2M'（ER）2或L2N（μ-X）2M'（X）2 以形成聚合物或共聚物SSP。 通过这种方法形成新的SSP和中间产品。

公开(公告)号：US20130060054A1

公开(公告)日：2013-03-07

申请号：US13659620

申请日：2012-10-24

申请人： Robert V.Fox ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun ,  Kelsey R. Margulieux ,  Andrew W. Holland ,  BATTELLE ENERGY ALLIANCE, LLC

发明人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua J. Pak ,  Chivin Sun ,  Kelsey R. Margulieux ,  Andrew W. Holland

IPC分类号： C07F19/00

CPC分类号： C07F9/5045 ,  C07F19/005

摘要： Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

公开(公告)号：US08445388B2

公开(公告)日：2013-05-21

申请号：US13099043

申请日：2011-05-02

申请人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua Pak

发明人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua Pak

IPC分类号： H01L21/461

CPC分类号： H01L31/0322 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/0262 ,  Y02E10/541 ,  Y10S977/813 ,  Y10S977/824

摘要： Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

摘要翻译： 单源前体经受二氧化碳以形成材料颗粒。 二氧化碳可以处于超临界状态。 单源前体还可以经受超临界二氧化碳以外的超临界流体以形成材料颗粒。 该方法可用于形成纳米颗粒。 在一些实施方案中，所述方法用于形成黄铜矿材料。 可以制造诸如半导体器件的器件，其包括这样的粒子。 形成半导体器件的方法包括使单源前体经二氧化碳形成半导体材料颗粒，并且在颗粒和电极之间建立电接触。

公开(公告)号：US08003070B2

公开(公告)日：2011-08-23

申请号：US12047956

申请日：2008-03-13

申请人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua Pak

发明人： Robert V. Fox ,  Rene G. Rodriguez ,  Joshua Pak

IPC分类号： C01B17/00 ,  C01B19/00

CPC分类号： H01L31/0322 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/0262 ,  Y02E10/541 ,  Y10S977/813 ,  Y10S977/824

摘要： Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

摘要翻译： 单源前体经受二氧化碳以形成材料颗粒。 二氧化碳可以处于超临界状态。 单源前体还可以经受超临界二氧化碳以外的超临界流体以形成材料颗粒。 该方法可用于形成纳米颗粒。 在一些实施方案中，所述方法用于形成黄铜矿材料。 可以制造诸如半导体器件的器件，其包括这样的粒子。 形成半导体器件的方法包括使单源前体经二氧化碳形成半导体材料颗粒，并且在颗粒和电极之间建立电接触。

公开(公告)号：US08951446B2

公开(公告)日：2015-02-10

申请号：US13365800

申请日：2012-02-03

申请人： Robert V. Fox ,  Rene Rodriguez ,  Joshua J. Pak ,  Chivin Sun

发明人： Robert V. Fox ,  Rene Rodriguez ,  Joshua J. Pak ,  Chivin Sun

IPC分类号： H01B1/02

CPC分类号： C01B17/20 ,  B82Y30/00 ,  C01B19/002 ,  C01P2002/30 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/80

摘要： Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

摘要翻译： 包含围绕黄铜矿材料的涂层的混合颗粒，所述涂层包含金属，半导体材料或聚合物; 包含黄铜矿材料的核心和包含官能化黄铜矿材料的壳体，所述壳体包围所述核心; 或黄铜矿材料与试剂，热和辐射中的至少一种的反应产物。 还公开了形成杂化颗粒的方法。

公开(公告)号：US20110204320A1

公开(公告)日：2011-08-25

申请号：US13099043

申请日：2011-05-02

申请人： Robert V. Fox ,  Rene Rodriguez ,  Joshua Pak

发明人： Robert V. Fox ,  Rene Rodriguez ,  Joshua Pak

IPC分类号： H01L29/06 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L31/0322 ,  H01L21/02485 ,  H01L21/02505 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/0262 ,  Y02E10/541 ,  Y10S977/813 ,  Y10S977/824

摘要： Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

摘要翻译： 单源前体经受二氧化碳以形成材料颗粒。 二氧化碳可以处于超临界状态。 单源前体还可以经受超临界二氧化碳以外的超临界流体以形成材料颗粒。 该方法可用于形成纳米颗粒。 在一些实施方案中，所述方法用于形成黄铜矿材料。 可以制造诸如半导体器件的器件，其包括这样的粒子。 形成半导体器件的方法包括使单源前体经二氧化碳形成半导体材料颗粒，并且在颗粒和电极之间建立电接触。

公开(公告)号：US20100206326A1

公开(公告)日：2010-08-19

申请号：US12704393

申请日：2010-02-11

申请人： Robert V. Fox ,  Recep Avci ,  Gary S. Groenewold

发明人： Robert V. Fox ,  Recep Avci ,  Gary S. Groenewold

IPC分类号： B08B7/00

CPC分类号： C08G79/025 ,  B08B7/0014 ,  C08G65/34 ,  C08L85/02

摘要： Methods of removing contaminant matter from porous materials include applying a polymer material to a contaminated surface, irradiating the contaminated surface to cause redistribution of contaminant matter, and removing at least a portion of the polymer material from the surface. Systems for decontaminating a contaminated structure comprising porous material include a radiation device configured to emit electromagnetic radiation toward a surface of a structure, and at least one spray device configured to apply a capture material onto the surface of the structure. Polymer materials that can be used in such methods and systems include polyphosphazine-based polymer materials having polyphosphazine backbone segments and side chain groups that include selected functional groups. The selected functional groups may include iminos, oximes, carboxylates, sulfonates, β-diketones, phosphine sulfides, phosphates, phosphites, phosphonates, phosphinates, phosphine oxides, monothio phosphinic acids, and dithio phosphinic acids.

摘要翻译： 从多孔材料去除污染物质的方法包括将聚合物材料施加到污染的表面上，照射被污染的表面以引起污染物质的再分配，以及从表面除去至少一部分聚合物材料。 用于净化包括多孔材料的污染结构的系统包括被配置为朝向结构的表面发射电磁辐射的辐射装置和被配置为将捕获材料施加到结构的表面上的至少一个喷射装置。 可以用于这些方法和体系的聚合物材料包括具有多聚磷腈骨架链段的聚磷腈基聚合物材料和包括选定官能团的侧链基团。 所选择的官能团可以包括亚氨基，肟，羧酸盐，磺酸盐，二酮，硫化膦，磷酸盐，亚磷酸盐，膦酸盐，次膦酸盐，氧化膦，一硫次膦酸和二硫次膦酸。