Methods for forming particles
    2.
    发明授权
    Methods for forming particles 有权
    形成颗粒的方法

    公开(公告)号:US09371226B2

    公开(公告)日:2016-06-21

    申请号:US13019879

    申请日:2011-02-02

    Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

    Abstract translation: 将单源前体或单源前体的预共聚物进行微波辐射以形成I-III-VI2材料的颗粒。 这样的颗粒可以以纤锌矿相形成,并且可以通过例如暴露于热而转变成黄铜矿相。 纤锌矿相中的颗粒可以具有基本上六边形的形状,其能够堆叠成有序层。 纤锌矿相中的颗粒可以与黄铜矿相中的颗粒(即,黄铜矿纳米颗粒)混合,其可以填充纤锌矿相中颗粒的有序层内的空隙,从而产生具有良好覆盖率的膜。 在一些实施例中,所述方法用于形成包含I-III-VI2材料的半导体材料层。 可以使用这样的方法来制造诸如薄膜太阳能电池的装置。

    Hybrid particles and associated methods
    4.
    发明授权
    Hybrid particles and associated methods 有权
    混合粒子和相关方法

    公开(公告)号:US08951446B2

    公开(公告)日:2015-02-10

    申请号:US13365800

    申请日:2012-02-03

    Abstract: Hybrid particles that comprise a coating surrounding a chalcopyrite material, the coating comprising a metal, a semiconductive material, or a polymer; a core comprising a chalcopyrite material and a shell comprising a functionalized chalcopyrite material, the shell enveloping the core; or a reaction product of a chalcopyrite material and at least one of a reagent, heat, and radiation. Methods of forming the hybrid particles are also disclosed.

    Abstract translation: 包含围绕黄铜矿材料的涂层的混合颗粒,所述涂层包含金属,半导体材料或聚合物; 包含黄铜矿材料的核心和包含官能化黄铜矿材料的壳体,所述壳体包围所述核心; 或黄铜矿材料与试剂,热和辐射中的至少一种的反应产物。 还公开了形成杂化颗粒的方法。

    Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
    6.
    发明授权
    Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods 有权
    形成单源前体的方法,形成聚合单源前体的方法,以及通过这些方法形成的单源前体和中间产物

    公开(公告)号:US08324414B2

    公开(公告)日:2012-12-04

    申请号:US12646474

    申请日:2009-12-23

    CPC classification number: C07F9/5045 C07F19/005

    Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

    Abstract translation: 形成单源前体(SSPs)的方法包括形成具有经验式½{L2N(μ-X)2M'X2} 2的中间产物,并使MER与中间产物反应形成式L2N(μ-ER)的SSP, 2M'(ER)2,其中L是路易斯碱,M是IA族原子,N是IB族原子,M'是IIIB原子,每个E是VIB族原子,每个X是VIIA族 原子或硝酸根,每个R基团是烷基,芳基,乙烯基,(全)氟烷基,(全)氟芳基,硅烷或氨基甲酰基。 形成聚合物或共聚物SSP的方法包括使HE1R1E1H和MER中的至少一种与一种或多种具有经验式L2N(μ-ER)2M'(ER)2或L2N(μ-X)2M'(X)2 以形成聚合物或共聚物SSP。 通过这种方法形成新的SSP和中间产品。

    One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles
    7.
    发明授权
    One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles 有权
    一锅合金黄铜矿半导体纳米粒子

    公开(公告)号:US08231848B1

    公开(公告)日:2012-07-31

    申请号:US13443114

    申请日:2012-04-10

    Abstract: Ternary and quaternary Chalcopyrite CuInxGa1-xSySe2-y (CIGS, where 0≦x and y≦1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150° C. to 190° C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.

    Abstract translation: 三元和四元黄铜矿CuInxGa1-xSySe2-y(CIGS,其中0和nlE; x和y≦̸ 1)纳米颗粒由分子单源前体(SSPs)通过一锅反应在高沸点溶剂中使用盐(即 NaCl作为副产物)作为传热剂通过常规对流加热方法。 随着反应温度以非常高的产率从150℃变化到190℃,纳米颗粒尺寸为1.8nm至5.2nm。 可调谐的纳米颗粒尺寸通过操作反应温度,反应时间和前体浓度来实现。 此外,本研究开发的方法具有可扩展性,可实现四价和四级黄铜矿CIGS纳米粒子的超大批量生产。

    METHODS OF FORMING SINGLE SOURCE PRECURSORS, METHODS OF FORMING POLYMERIC SINGLE SOURCE PRECURSORS, AND SINGLE SOURCE PRECURSORS AND INTERMEDIATE PRODUCTS FORMED BY SUCH METHODS
    8.
    发明申请
    METHODS OF FORMING SINGLE SOURCE PRECURSORS, METHODS OF FORMING POLYMERIC SINGLE SOURCE PRECURSORS, AND SINGLE SOURCE PRECURSORS AND INTERMEDIATE PRODUCTS FORMED BY SUCH METHODS 有权
    形成单一来源前体的方法,形成聚合单体源前体的方法,单源资源前体和通过这些方法形成的中间产物

    公开(公告)号:US20110152554A1

    公开(公告)日:2011-06-23

    申请号:US12646474

    申请日:2009-12-23

    CPC classification number: C07F9/5045 C07F19/005

    Abstract: Methods of forming single source precursors (SSPs) include forming intermediate products having the empirical formula ½{L2N(μ-X)2M′X2}2, and reacting MER with the intermediate products to form SSPs of the formula L2N(μ-ER)2M′(ER)2, wherein L is a Lewis base, M is a Group IA atom, N is a Group IB atom, M′ is a Group IIIB atom, each E is a Group VIB atom, each X is a Group VIIA atom or a nitrate group, and each R group is an alkyl, aryl, vinyl, (per)fluoro alkyl, (per)fluoro aryl, silane, or carbamato group. Methods of forming polymeric or copolymeric SSPs include reacting at least one of HE1R1E1H and MER with one or more substances having the empirical formula L2N(μ-ER)2M′(ER)2 or L2N(μ-X)2M′(X)2 to form a polymeric or copolymeric SSP. New SSPs and intermediate products are formed by such methods.

    Abstract translation: 形成单源前体(SSPs)的方法包括形成具有经验式½{L2N(μ-X)2M'X2} 2的中间产物,并使MER与中间产物反应形成式L2N(μ-ER)的SSP, 2M'(ER)2,其中L是路易斯碱,M是IA族原子,N是IB族原子,M'是IIIB原子,每个E是VIB族原子,每个X是VIIA族 原子或硝酸根,每个R基团是烷基,芳基,乙烯基,(全)氟烷基,(全)氟芳基,硅烷或氨基甲酰基。 形成聚合物或共聚物SSP的方法包括使HE1R1E1H和MER中的至少一种与一种或多种具有经验式L2N(μ-ER)2M'(ER)2或L2N(μ-X)2M'(X)2 以形成聚合物或共聚物SSP。 通过这种方法形成新的SSP和中间产品。

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