Image sensor and semiconductor device including the same
    21.
    发明申请
    Image sensor and semiconductor device including the same 审中-公开
    图像传感器和包括其的半导体器件

    公开(公告)号:US20110001205A1

    公开(公告)日:2011-01-06

    申请号:US12801745

    申请日:2010-06-23

    IPC分类号: H01L31/0232 H04N5/225

    摘要: Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter.

    摘要翻译: 示例性实施例涉及三维图像传感器,其包括在基板上的彩色像素阵列,基板上的距离像素阵列,彩色像素阵列上的RGB滤光器,并且被配置为允许具有第一波长的可见光通过, 距离像素阵列上的红外光滤光器,并且被配置为允许具有第二波长的近红外光通过;以及在RGB滤光器和近红外光滤光器上的堆叠型单波段滤光器,并且被配置为允许具有第三波长的光 第一波长和第二波长通过。 根据示例性实施例,半导体器件可以在衬底上包括彩色像素阵列; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述光诱导构件上的RGB滤光器,并且被配置为允许可见光通过; 在所述导光部件上的近红外光滤光器,其被配置为允许近红外光通过; 以及RGB滤光器和近红外光滤光器上的多个透镜。