摘要:
Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter.
摘要:
An apparatus and method for microstructures of a display device which focus external light toward light-absorption regions to enhance brightness and contrast of the display device. The display device includes a light absorption layer disposed to one side of a light emission layer. The light absorption layer includes light refracting structures and light absorption elements, wherein each of the light absorption elements is positioned in the light refracting structures. The light directing structures substantially direct incident light toward one of the plurality of light absorption elements positioned therein to reduce the reflection of external light.