公开(公告)号：US08581964B2

公开(公告)日：2013-11-12

申请号：US12905458

申请日：2010-10-15

申请人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

发明人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

IPC分类号： H04N7/18

CPC分类号： H01L31/02162 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14645 ,  H04N13/254

摘要： Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light.

摘要翻译： 图像传感器包括其中具有传感器像素阵列的三维（3D）彩色图像传感器。 3-D彩色图像传感器可以包括具有多个颜色传感器和其中的深度传感器的3-D图像传感器像素。 多个颜色传感器可以包括邻近深度传感器延伸的红色，绿色和蓝色传感器。 还提供了一个拒收过滤器。 与3-D图像传感器像素的光接收表面相对延伸的该拒绝滤光器被配置为相对于远红外光对可见光和近红外光选择性地透明。 深度传感器还可以包括对于相对于可见光具有大于约700nm的波长的近红外光选择性透明的红外滤光器。

公开(公告)号：US20110102547A1

公开(公告)日：2011-05-05

申请号：US12905458

申请日：2010-10-15

申请人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

发明人： Sang-Chul Sul ,  Won-Cheol Jung ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

IPC分类号： H04N13/02 ,  H01L31/0232

CPC分类号： H01L31/02162 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14645 ,  H04N13/254

摘要： Image sensors include three-dimensional (3D) color image sensors having an array of sensor pixels therein. A 3-D color image sensor may include a 3-D image sensor pixel having a plurality of color sensors and a depth sensor therein. The plurality of color sensors may include red, green and blue sensors extending adjacent the depth sensor. A rejection filter is also provided. This rejection filter, which extends opposite a light receiving surface of the 3-D image sensor pixel, is configured to be selectively transparent to visible and near-infrared light relative to far-infrared light. The depth sensor may also include an infrared filter that is selectively transparent to near-infrared light having wavelengths greater than about 700 nm relative to visible light.

摘要翻译： 图像传感器包括其中具有传感器像素阵列的三维（3D）彩色图像传感器。 3-D彩色图像传感器可以包括具有多个颜色传感器和其中的深度传感器的3-D图像传感器像素。 多个颜色传感器可以包括邻近深度传感器延伸的红色，绿色和蓝色传感器。 还提供了一个拒收过滤器。 与3-D图像传感器像素的光接收表面相对延伸的该拒绝滤光器被配置为相对于远红外光对可见光和近红外光选择性地透明。 深度传感器还可以包括对于相对于可见光具有大于约700nm的波长的近红外光选择性透明的红外滤光器。

公开(公告)号：US20110001205A1

公开(公告)日：2011-01-06

申请号：US12801745

申请日：2010-06-23

申请人： Sang-Chul Sul ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

发明人： Sang-Chul Sul ,  Yoon-Dong Park ,  Myung-Bok Lee ,  Young-Gu Jin

IPC分类号： H01L31/0232 ,  H04N5/225

CPC分类号： H04N5/3696 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L31/02162 ,  H04N5/2226 ,  H04N9/045

摘要： Example embodiments relate to a three-dimensional image sensor including a color pixel array on a substrate, a distance pixel array on the substrate, an RGB filter on the color pixel array and configured to allow visible light having a first wavelength to pass, a near infrared light filter on the distance pixel array and configured to allow near infrared light having a second wavelength to pass, and a stack type single band filter on the RGB filter and the near infrared light filter and configured to allow light having a third wavelength between the first wavelength and the second wavelength to pass. According to example embodiments, a semiconductor device may include a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; a RGB filter on the light-inducing member and configured to allow visible light to pass; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and a plurality of lenses on the RGB filter and the near infrared light filter.

摘要翻译： 示例性实施例涉及三维图像传感器，其包括在基板上的彩色像素阵列，基板上的距离像素阵列，彩色像素阵列上的RGB滤光器，并且被配置为允许具有第一波长的可见光通过， 距离像素阵列上的红外光滤光器，并且被配置为允许具有第二波长的近红外光通过;以及在RGB滤光器和近红外光滤光器上的堆叠型单波段滤光器，并且被配置为允许具有第三波长的光 第一波长和第二波长通过。 根据示例性实施例，半导体器件可以在衬底上包括彩色像素阵列; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述光诱导构件上的RGB滤光器，并且被配置为允许可见光通过; 在所述导光部件上的近红外光滤光器，其被配置为允许近红外光通过; 以及RGB滤光器和近红外光滤光器上的多个透镜。

公开(公告)号：US20110013055A1

公开(公告)日：2011-01-20

申请号：US12801938

申请日：2010-07-02

申请人： Sang-Chul Sul ,  Myung-Bok Lee ,  Hoon-Sang Oh ,  Young-Gu Jin

发明人： Sang-Chul Sul ,  Myung-Bok Lee ,  Hoon-Sang Oh ,  Young-Gu Jin

IPC分类号： H04N5/335

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14632

摘要： Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass. According to example embodiments, a method of manufacturing a semiconductor device may include forming a color pixel array on a substrate; forming a distance pixel array on the substrate; forming a light-inducing member on the color pixel array and the distance pixel array; forming an infrared light cut filter on the light-inducing member; forming a near infrared light filter on the light-inducing member; forming a RGB filter on the light-inducing member; and forming a plurality of lenses on the infrared light cut filter and the near infrared light filter.

摘要翻译： 示例性实施例涉及在衬底上包括彩色像素阵列的半导体器件; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述导光部件上的红外光截止滤光器，被配置为阻挡红外光; 在所述导光部件上的近红外光滤光器，其被配置为允许近红外光通过; 以及在所述光诱导构件上的RGB滤光器，并且被配置为允许可见光通过。 根据示例性实施例，制造半导体器件的方法可以包括在衬底上形成彩色像素阵列; 在基板上形成距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上形成导光部件; 在所述感光构件上形成红外光截止滤光器; 在所述导光部件上形成近红外光滤波器; 在所述感光构件上形成RGB滤光器; 并且在红外线截止滤光器和近红外光滤光器上形成多个透镜。