公开(公告)号：US20190157334A1

公开(公告)日：2019-05-23

申请号：US16055758

申请日：2018-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Hsin-Chi CHEN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Yen-Liang LIN

IPC: H01L27/146

Abstract: The present disclosure is directed to anchor structures and methods for forming anchor structures such that planarization and wafer bonding can be uniform. Anchor structures can include anchor layers formed on a dielectric layer surface and anchor pads formed in the anchor layer and on the dielectric layer surface. The anchor layer material can be selected such that the planarization selectivity of the anchor layer, anchor pads, and the interconnection material can be substantially the same as one another. Anchor pads can provide uniform density of structures that have the same or similar material.

公开(公告)号：US20190067354A1

公开(公告)日：2019-02-28

申请号：US15683900

申请日：2017-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: Structures and formation methods of a light-sensing device are provided. The light-sensing device includes a semiconductor substrate and a light-sensing region in the semiconductor substrate. The light-sensing device also includes a light-reflective element over the semiconductor substrate. The light-sensing region is between the light-reflective element and a light-receiving surface of the semiconductor substrate. The light-reflective element includes a stack of multiple pairs of dielectric layers. Each of the pairs has a first dielectric layer and a second dielectric layer, and the first dielectric layer has a different refractive index than that of the second dielectric layer.

公开(公告)号：US20170125459A1

公开(公告)日：2017-05-04

申请号：US14925576

申请日：2015-10-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Bo-Tsung TSAI ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Yung-Lung HSU ,  Yun-Wei CHENG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.

公开(公告)号：US20170069678A1

公开(公告)日：2017-03-09

申请号：US14849311

申请日：2015-09-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Tsung-Han TSAI ,  Kuo-Cheng LEE ,  Volume CHIEN ,  Yung-Lung HSU

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract translation: 半导体器件包括衬底，器件层，复合栅格结构，钝化层和滤色器。 器件层覆盖衬底。 复合网格结构覆盖设备层。 复合栅格结构包括通过复合栅格结构的空穴，并且复合栅格结构包括金属栅格层和堆叠在金属栅格层上的电介质栅格层。 钝化层保形地覆盖复合网格结构。 滤色器分别填充空腔。

公开(公告)号：US20230387169A1

公开(公告)日：2023-11-30

申请号：US18362866

申请日：2023-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146 ,  H01L31/036

CPC classification number: H01L27/1463 ,  H01L27/14683 ,  H01L27/1464 ,  H01L31/036 ,  H01L27/14629 ,  H01L27/14607

Abstract: A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

公开(公告)号：US20220302186A1

公开(公告)日：2022-09-22

申请号：US17207378

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Chien HSIEH ,  Hsin-Chi CHEN ,  Kuo-Cheng LEE ,  Yun-Wei CHENG

IPC: H01L27/146

Abstract: The present disclosure describes an image sensor device and a method for forming the same. The image sensor device can include a semiconductor layer. The semiconductor layer can include a first surface and a second surface. The image sensor device can further include an interconnect structure formed over the first surface of the semiconductor layer, first and second radiation sensing regions formed in the second surface of the semiconductor layer, a metal stack formed over the second radiation sensing region, and a passivation layer formed through the metal stack and over a top surface of the first radiation sensing region. The metal stack can be between the passivation layer and an other top surface of the second radiation sensing region.

公开(公告)号：US20210327947A1

公开(公告)日：2021-10-21

申请号：US16850524

申请日：2020-04-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kun-Huei LIN ,  Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chun-Wei CHIA

IPC: H01L27/146

Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.

公开(公告)号：US20210202564A1

公开(公告)日：2021-07-01

申请号：US17183871

申请日：2021-02-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/0352

Abstract: A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

公开(公告)号：US20200152687A1

公开(公告)日：2020-05-14

申请号：US16741405

申请日：2020-01-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Yin-Chieh HUANG

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.

公开(公告)号：US20200083264A1

公开(公告)日：2020-03-12

申请号：US16687617

申请日：2019-11-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a grid isolation structure, and a color filter. The substrate has a light-sensitive element therein. The grid isolation structure is above the substrate and includes a reflective layer, a first dielectric layer above the reflective layer, and a second dielectric layer above the first dielectric layer. The color filter is above the light-sensitive element and is surrounded by the grid isolation structure.