公开(公告)号：US20190157334A1

公开(公告)日：2019-05-23

申请号：US16055758

申请日：2018-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Hsin-Chi CHEN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Yen-Liang LIN

IPC: H01L27/146

Abstract: The present disclosure is directed to anchor structures and methods for forming anchor structures such that planarization and wafer bonding can be uniform. Anchor structures can include anchor layers formed on a dielectric layer surface and anchor pads formed in the anchor layer and on the dielectric layer surface. The anchor layer material can be selected such that the planarization selectivity of the anchor layer, anchor pads, and the interconnection material can be substantially the same as one another. Anchor pads can provide uniform density of structures that have the same or similar material.

公开(公告)号：US20220359372A1

公开(公告)日：2022-11-10

申请号：US17871532

申请日：2022-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jason HUANG ,  Liang-Chor CHUNG ,  Cheng-Yuan LI

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

公开(公告)号：US20190096830A1

公开(公告)日：2019-03-28

申请号：US15906214

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L23/00 ,  H01L27/146

Abstract: A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

公开(公告)号：US20200321294A1

公开(公告)日：2020-10-08

申请号：US16907838

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L23/00 ,  H01L27/146

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

公开(公告)号：US20190067356A1

公开(公告)日：2019-02-28

申请号：US15692395

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei LIN ,  Yin-Chieh HUANG ,  Yun-Wei CHENG ,  Yi-Hsing CHU ,  Cheng-Yuan LI ,  Chun-Hao CHOU

IPC: H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first light-sensing region and a second light-sensing region adjacent to the first light-sensing region. The image sensor device includes an isolation structure in the semiconductor substrate and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a reflective grid over the isolation structure and surrounding the first light-sensing region and the second light-sensing region. The image sensor device includes a first color filter over the first light-sensing region and extending into a first trench of the reflective grid. The image sensor device includes a second color filter over the second light-sensing region and extending into the first trench to be in direct contact with the first color filter in the first trench.