公开(公告)号：US20170278785A1

公开(公告)日：2017-09-28

申请号：US15620637

申请日：2017-06-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Han-Hsin Kuo ,  Chung-Chi Ko ,  Neng-Jye Yang ,  Fu-Ming Huang ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: H01L23/528 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

公开(公告)号：US09723915B2

公开(公告)日：2017-08-08

申请号：US14817264

申请日：2015-08-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Han-Hsin Kuo ,  Chi-Ming Tsai ,  He Hui Peng

IPC: B08B7/00 ,  A46B17/06 ,  B08B6/00 ,  A46B15/00 ,  B08B1/00

CPC classification number: A46B17/06 ,  A46B15/0018 ,  B08B1/007 ,  B08B6/00

Abstract: A method for cleaning a brush includes inducing a static charge on a surface of a first plate, wherein the first plate comprises at least one of silicon nitride (SixNy) or silicon oxide (SiaOb), wherein a, b, x and y are integers. The method further includes rotating the brush in contact with the surface of the first plate.

公开(公告)号：US20170018496A1

公开(公告)日：2017-01-19

申请号：US15282704

申请日：2016-09-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Han-Hsin Kuo ,  Chung-Chi Ko ,  Neng-Jye Yang ,  Fu-Ming Huang ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: H01L23/528 ,  H01L21/321 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

Abstract translation: 提供了形成用于半导体器件的互连的互连和方法。 通过处理电介质层的上表面以形成高密度层来形成互连。 处理可以包括例如使用六甲基二硅氮烷（HMDS），三甲基硅二乙胺（TMSDEA）或三甲基甲硅烷基乙酸酯（OTMSA）产生高密度单层。 在处理之后，电介质层可以被图案化以产生开口，随后填充有导电材料。 可以使用例如化学机械抛光来除去过量的导电材料。

公开(公告)号：US09460997B2

公开(公告)日：2016-10-04

申请号：US14145397

申请日：2013-12-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Han-Hsin Kuo ,  Chung-Chi Ko ,  Neng-Jye Yang ,  Fu-Ming Huang ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: H01L27/108 ,  H01L23/528 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

Abstract translation: 提供了形成用于半导体器件的互连的互连和方法。 通过处理电介质层的上表面以形成高密度层来形成互连。 处理可以包括例如使用六甲基二硅氮烷（HMDS），三甲基硅二乙胺（TMSDEA）或三甲基甲硅烷基乙酸酯（OTMSA）产生高密度单层。 在处理之后，电介质层可以被图案化以产生开口，随后填充有导电材料。 可以使用例如化学机械抛光来除去过量的导电材料。