公开(公告)号：US20220384252A1

公开(公告)日：2022-12-01

申请号：US17710139

申请日：2022-03-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott Robert Summerfelt ,  Benjamin Stassen Cook ,  Sebastian Meier

IPC: H01L21/762

Abstract: A device includes a die with a protective overcoat and a substrate, the substrate comprising a first region and a second region that are spaced apart. The device also includes an isolation dielectric between the protective overcoat and the die. A pre-metal dielectric (PMD) barrier is between the isolation dielectric and the substrate, the PMD barrier having a first region that contacts the first region of the substrate and a second region that contacts the second region of the substrate, the first region and the second region of the PMD barrier being spaced apart. A through trench filled with a polymer dielectric extends between the first region and the second region of the substrate, and between the first region and the second region of the PMD barrier to contact the isolation dielectric.

公开(公告)号：US11487206B2

公开(公告)日：2022-11-01

申请号：US16729919

申请日：2019-12-30

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: G03F7/16 ,  G03F7/30 ,  H01L23/00 ,  H01L21/266 ,  H01L21/308 ,  H01L21/027 ,  G03F7/095

Abstract: A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

公开(公告)号：US11387271B2

公开(公告)日：2022-07-12

申请号：US16716652

申请日：2019-12-17

Applicant: Texas Instruments Incorporated

Inventor： Scott Robert Summerfelt ,  Hassan Omar Ali ,  Benjamin Stassen Cook

IPC: H01L27/146

Abstract: In described examples an integrated circuit (IC) has multiple layers of dielectric material overlying at least a portion of a surface of a substrate. A trench is etched through the layers of dielectric material to expose a portion the substrate to form a trench floor, the trench being surrounded by a trench wall formed by the layers of dielectric material. A metal perimeter band surrounds the trench adjacent the trench wall, the perimeter band being embedded in one of the layers of the dielectric material.

公开(公告)号：US11320453B2

公开(公告)日：2022-05-03

申请号：US16856488

申请日：2020-04-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott Robert Summerfelt ,  Benjamin Stassen Cook

IPC: G01P21/00 ,  G01P15/09

Abstract: A method includes measuring a first signal from a set of pyroelectric devices at a first temperature and measuring a second signal from a set of piezoelectric devices at a first acceleration. The method also includes measuring a third signal from the set of pyroelectric devices at a second temperature and measuring a fourth signal from the set of piezoelectric devices at a second acceleration. The method further includes adjusting a piezoelectric calibration using the first, second, third, and fourth signals.

公开(公告)号：US11195811B2

公开(公告)日：2021-12-07

申请号：US16843717

申请日：2020-04-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott Robert Summerfelt ,  Benjamin Stassen Cook ,  Ralf Jakobskrueger Muenster ,  Sreenivasan Kalyani Koduri

IPC: H01L23/00

Abstract: In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

公开(公告)号：US20210200094A1

公开(公告)日：2021-07-01

申请号：US16729919

申请日：2019-12-30

Applicant: Texas Instruments Incorporated

Inventor： Daniel Lee Revier ,  Sean Ping Chang ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: G03F7/16 ,  G03F7/30 ,  H01L23/00 ,  H01L21/266 ,  H01L21/308 ,  H01L21/027

Abstract: A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

公开(公告)号：US20210099237A1

公开(公告)日：2021-04-01

申请号：US16590354

申请日：2019-10-01

Applicant: Texas Instruments Incorporated

Inventor： Bichoy Bahr ,  Benjamin Stassen Cook ,  Scott Robert Summerfelt

IPC: H04B11/00 ,  H01L29/51

Abstract: In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.

公开(公告)号：US20190339806A1

公开(公告)日：2019-11-07

申请号：US16512020

申请日：2019-07-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wei-Yan Shih ,  Steve Kummerl ,  Mark Stephen Toth ,  Alok Lohia ,  Terry Lee Sculley ,  Seung Bae Lee ,  Scott Robert Summerfelt

IPC: G06F3/041

Abstract: An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.

公开(公告)号：US10353503B2

公开(公告)日：2019-07-16

申请号：US14926265

申请日：2015-10-29

Applicant: Texas Instruments Incorporated

Inventor： Wei-Yan Shih ,  Steve Kummerl ,  Mark Stephen Toth ,  Alok Lohia ,  Terry Lee Sculley ,  Seung Bae Lee ,  Scott Robert Summerfelt

IPC: G06F3/041

Abstract: An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element may include a conditioning circuit, temperature gauge, FRAM and a processor core.

公开(公告)号：US20250079340A1

公开(公告)日：2025-03-06

申请号：US18951320

申请日：2024-11-18

Applicant: Texas Instruments Incorporated

Inventor： Scott Robert Summerfelt ,  Thomas Dyer Bonifield ,  Sreeram Subramanyam Nasum ,  Peter Smeys ,  Benjamin Stassen Cook

IPC: H01L23/00 ,  H01L21/762 ,  H01L21/78 ,  H01L23/29 ,  H01L23/31 ,  H01L23/64

Abstract: In some examples, a semiconductor device comprises a substrate, a trench, and a layer of a dielectric material. The substrate includes a semiconductor material and has opposing first and second surfaces. The trench extends between the first surface and the second surface, the trench having the dielectric material. The layer of the dielectric material is on the second surface of the substrate and is contiguous with the dielectric material in the trench.