公开(公告)号：US20150109853A1

公开(公告)日：2015-04-23

申请号：US14390324

申请日：2013-03-25

Applicant: TOHOKU UNIVERSITY

Inventor： Hideo Sato ,  Shunsuke Fukami ,  Michihiko Yamanouchi ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Hideo Ohno

IPC: G11C11/16 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetoresistance effect element including a recording layer of high thermal stability to perform perpendicular magnetic recording within a film surface, and a magnetic memory using the element. The element includes: a first ferromagnetic layer of an invariable magnetization direction; a second ferromagnetic layer of a variable magnetization direction; a first non-magnetic layer between the first and second ferromagnetic layers; current supply terminals connected to the first and second ferromagnetic layers; a non-magnetic coupling layer on a surface of the second ferromagnetic layer opposite the first non-magnetic layer; a third ferromagnetic layer of a variable magnetization direction on a surface of the non-magnetic coupling layer opposite the second ferromagnetic layer; and a second non-magnetic layer on a surface of the third ferromagnetic layer opposite the non-magnetic coupling layer. The second and third ferromagnetic layers have the same magnetization direction and are reversed in magnetization by spin injection with a current.

Abstract translation: 包括具有高热稳定性的记录层以在膜表面内进行垂直磁记录的磁阻效应元件和使用该元件的磁存储器。 该元件包括：不变磁化方向的第一铁磁层; 可变磁化方向的第二铁磁层; 第一和第二铁磁层之间的第一非磁性层; 连接到第一和第二铁磁层的电流源端子; 在所述第二铁磁层的与所述第一非磁性层相对的表面上的非磁性耦合层; 在与第二铁磁层相对的非磁性耦合层的表面上的可变磁化方向的第三铁磁层; 以及在与非磁耦合层相对的第三铁磁层的表面上的第二非磁性层。 第二和第三铁磁层具有相同的磁化方向，并且通过用电流的自旋注入在磁化中反转。