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公开(公告)号：US12159668B2
公开(公告)日：2024-12-03
申请号：US18246780
申请日：2020-09-30
Inventor： Shigemi Mizukami , Shunsuke Fukami , Junsaku Nitta , Satoshi Iihama , Yoshiro Hirayama , Seiji Sakai
Abstract: A magneto-optical memory interface includes: a memory cell structure having multiple allocated magnetic recording cells, a selection means configured to select an individual or a predetermined number of the multiple allocated magnetic recording cells of the memory structure, and configured for an electronic signal to be applicable thereto; and a light irradiation part configured to irradiate the predetermined number of the multiple allocated magnetic memory cells with an optical signal, wherein each of the magnetic recording cells is a magnetic recording cell whose sensitivity to changes in a magnetization state thereof increases in response to an irradiation light from the light irradiation part, and each of the magnetic recording cells is a magnetic recording cell whose magnetization state changes in response to an applied electrical signal resulting from selection by the selection means and the irradiation light from the light irradiation part.
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公开(公告)号：US11563169B2
公开(公告)日：2023-01-24
申请号：US15776902
申请日：2016-11-18
Applicant: TOHOKU UNIVERSITY
Inventor： Hideo Sato , Yoshihisa Horikawa , Shunsuke Fukami , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno , Tetsuo Endoh , Hiroaki Honjo
Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.
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公开(公告)号：US11557719B2
公开(公告)日：2023-01-17
申请号：US16967364
申请日：2019-01-30
Applicant: TOHOKU UNIVERSITY
Inventor： Shunsuke Fukami , Aleksandr Kurenkov , William Andrew Borders , Hideo Ohno , Tetsuo Endoh
IPC: G11C11/00 , H01L43/04 , G06N3/063 , G11C11/16 , G11C11/18 , G11C11/54 , H01L27/22 , H01L43/06 , H01L43/10
Abstract: There is provided a magnetoresistance effect element includes: a channel layer that extends in a first direction; a recording layer which includes a film formed from a ferromagnetic material, of which a magnetization state is changed to one of two or greater magnetization states, and which is formed on the channel layer; a non-magnetic layer that is provided on a surface of the recording layer; a reference layer which is provided on a surface of the non-magnetic layer, which includes a film formed from a ferromagnetic material, and of which a magnetization direction is fixed; a terminal pair that includes a first terminal and a second terminal which are electrically connected to the channel layer with an interval in the first direction, and to which a current pulse for bringing the recording layer to any one magnetization state with a plurality of pulses is input by flowing a current to the channel layer between the first terminal and the second terminal; and a third terminal that is electrically connected to the reference layer.
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公开(公告)号：US10658572B2
公开(公告)日：2020-05-19
申请号：US16179461
申请日：2018-11-02
Applicant: TOHOKU UNIVERSITY
Inventor： Hideo Sato , Shoji Ikeda , Mathias Bersweiler , Hiroaki Honjo , Kyota Watanabe , Shunsuke Fukami , Fumihiro Matsukura , Kenchi Ito , Masaaki Niwa , Tetsuo Endoh , Hideo Ohno
Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.
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公开(公告)号：US09941468B2
公开(公告)日：2018-04-10
申请号：US15502442
申请日：2015-07-29
Applicant: TOHOKU UNIVERSITY
Inventor： Shunsuke Fukami , Chaoling Zhang , Tetsuro Anekawa , Hideo Ohno , Tetsuo Endoh
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/105 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/10
Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction. A current having a direction same as the first direction is introduced to the heavy metal layer (11) to thereby enable the magnetization of the recording layer (12) to be inverted.
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Patent Agency Ranking
公开(公告)号：US09577182B2
公开(公告)日：2017-02-21
申请号：US15029860
申请日：2014-10-20
Applicant: TOHOKU UNIVERSITY
Inventor： Shoji Ikeda , Hideo Sato , Shunsuke Fukami , Michihiko Yamanouchi , Fumihiro Matsukura , Hideo Ohno , Shinya Ishikawa
CPC classification number: H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02
Abstract: A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D
Abstract translation: 具有热稳定性的磁阻效应元件和磁性存储器，即使是具有良好的接合尺寸，热稳定性为70以上的热稳定性。 磁阻效应元件包括形成参考层的不变磁化方向的第一磁性层，形成记录层的可变磁化方向的第二磁性层和设置在第一和第二磁性层之间的第一非磁性层， 第一和第二磁性层的厚度方向。 第一和第二磁性层中的至少一个在D（nm）和t（nm）之间具有以下关系：D <0.9t + 13，其中D是对应于端部上最长直线的长度的结尺寸 垂直于厚度方向的表面，t是层厚度。 结大小为30nm以下。
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公开(公告)号：US10263180B2
公开(公告)日：2019-04-16
申请号：US15657148
申请日：2017-07-22
Applicant: TOHOKU UNIVERSITY
Inventor： Hideo Sato , Shinya Ishikawa , Shunsuke Fukami , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno , Tetsuo Endoh
Abstract: A magnetoresistance effect element includes a reference layer made of a ferromagnetic material, a recording layer made of a ferromagnetic material, and a barrier layer disposed between the reference layer and the recording layer. The reference layer and the recording layer have an in-plane magnetization direction parallel to a surface of the layers. The recording layer has a shape that has short axis and long axis perpendicular to the short axis in plan view. A first value obtained by dividing a thickness of the recording layer by a length of the short axis of the recording layer is greater than 0.3 and smaller than 1.
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公开(公告)号：US09202545B2
公开(公告)日：2015-12-01
申请号：US14390324
申请日：2013-03-25
Applicant: TOHOKU UNIVERSITY
Inventor： Hideo Sato , Shunsuke Fukami , Michihiko Yamanouchi , Shoji Ikeda , Fumihiro Matsukura , Hideo Ohno
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1653 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
Abstract: A magnetoresistance effect element including a recording layer of high thermal stability to perform perpendicular magnetic recording within a film surface, and a magnetic memory using the element. The element includes: a first ferromagnetic layer of an invariable magnetization direction; a second ferromagnetic layer of a variable magnetization direction; a first non-magnetic layer between the first and second ferromagnetic layers; current supply terminals connected to the first and second ferromagnetic layers; a non-magnetic coupling layer on a surface of the second ferromagnetic layer opposite the first non-magnetic layer; a third ferromagnetic layer of a variable magnetization direction on a surface of the non-magnetic coupling layer opposite the second ferromagnetic layer; and a second non-magnetic layer on a surface of the third ferromagnetic layer opposite the non-magnetic coupling layer. The second and third ferromagnetic layers have the same magnetization direction and are reversed in magnetization by spin injection with a current.
Abstract translation: 包括具有高热稳定性的记录层以在膜表面内进行垂直磁记录的磁阻效应元件和使用该元件的磁存储器。 该元件包括：不变磁化方向的第一铁磁层; 可变磁化方向的第二铁磁层; 第一和第二铁磁层之间的第一非磁性层; 连接到第一和第二铁磁层的电流源端子; 在所述第二铁磁层的与所述第一非磁性层相对的表面上的非磁性耦合层; 在与第二铁磁层相对的非磁性耦合层的表面上的可变磁化方向的第三铁磁层; 以及在与非磁耦合层相对的第三铁磁层的表面上的第二非磁性层。 第二和第三铁磁层具有相同的磁化方向，并且通过用电流的自旋注入在磁化中反转。
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公开(公告)号：US20140097509A1
公开(公告)日：2014-04-10
申请号：US14118093
申请日：2012-04-19
Applicant: TOHOKU UNIVERSITY , NEC CORPORATION
Inventor： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC: H01L43/02
CPC classification number: H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
Abstract: A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.
Abstract translation: 所公开的磁存储元件包括：由具有垂直磁各向异性的铁磁物质形成的无磁化层; 响应层，设置成与无磁化层相对并由具有垂直磁各向异性的铁磁物质形成; 非磁性层，设置为与非磁性物质形成的与磁化自由层相反的一侧与响应层相对; 以及在与响应层相反的一侧与非磁性层相对设置并由具有垂直磁各向异性的铁磁物质形成的参考层。 磁化自由层包括在彼此反平行的方向上固定磁化的第一磁化固定区域和第二磁化固定区域，以及磁化方向可变的无磁化区域。
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公开(公告)号：US20230368840A1
公开(公告)日：2023-11-16
申请号：US18246780
申请日：2020-09-30
Inventor： Shigemi Mizukami , Shunsuke Fukami , Junsaku Nitta , Satoshi Iihama , Yoshiro Hirayama , Seiji Sakai
IPC: G11C13/06
CPC classification number: G11C13/06
Abstract: A magneto-optical memory interface includes: a memory cell structure having multiple allocated magnetic recording cells, a selection means configured to select an individual or a predetermined number of the multiple allocated magnetic recording cells of the memory structure, and configured for an electronic signal to be applicable thereto; and a light irradiation part configured to irradiate the predetermined number of the multiple allocated magnetic memory cells with an optical signal, wherein each of the magnetic recording cells is a magnetic recording cell whose sensitivity to changes in a magnetization state thereof increases in response to an irradiation light from the light irradiation part, and each of the magnetic recording cells is a magnetic recording cell whose magnetization state changes in response to an applied electrical signal resulting from selection by the selection means and the irradiation light from the light irradiation part.
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