Semiconductor device and manufacturing method thereof

    公开(公告)号:US10516033B2

    公开(公告)日:2019-12-24

    申请号:US15960096

    申请日:2018-04-23

    Abstract: A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and second gate structures, respectively. The first and second gate structures include first and second gate dielectric layers formed over the first and second channel regions and first and second gate electrode layers formed over the first and second gate dielectric layers. The first and second gate structures are aligned along a first direction. The first gate structure and the second gate structure are separated by a separation plug made of an insulating material. A width of the separation plug in a second direction perpendicular to the first direction is smaller than a width of the first gate structure in the second direction, when viewed in plan view.

    Photonic Semiconductor Device and Method of Manufacture

    公开(公告)号:US20240272352A1

    公开(公告)日:2024-08-15

    申请号:US18324576

    申请日:2023-05-26

    CPC classification number: G02B6/12004 G02B6/136 G02B2006/12121

    Abstract: A method includes connecting a first photonic package to a substrate, wherein the first photonic package includes a first waveguide and a first support over the first waveguide; connecting a second photonic package to the substrate adjacent the first photonic package, wherein the second photonic package includes a second waveguide, wherein the first photonic package and the second photonic package are laterally separated by a gap that has a width in the range of 15 μm to 190 μm; depositing a first quantity of an optical adhesive into the gap; and curing the first quantity of the optical adhesive, wherein after curing the first quantity of the optical adhesive, the first waveguide is optically coupled to the second waveguide through the first quantity of the optical adhesive.

    Inner spacer features for multi-gate transistors

    公开(公告)号:US11289584B2

    公开(公告)日:2022-03-29

    申请号:US16937164

    申请日:2020-07-23

    Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

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