公开(公告)号：US11682714B2

公开(公告)日：2023-06-20

申请号：US17706296

申请日：2022-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/66553 ,  H01L29/0653 ,  H01L29/42392 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/7853 ,  H01L21/0214 ,  H01L21/0228

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US11901237B2

公开(公告)日：2024-02-13

申请号：US17872103

申请日：2022-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chang-Yun Chang ,  Bone-Fong Wu ,  Ming-Chang Wen ,  Ya-Hsiu Lin

IPC: H01L21/8234 ,  H01L21/311 ,  H01L29/08 ,  H01L21/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/324 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/265

CPC classification number: H01L21/823431 ,  H01L21/0217 ,  H01L21/02156 ,  H01L21/31111 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/66545 ,  H01L21/0274 ,  H01L21/26513 ,  H01L21/31053 ,  H01L21/324 ,  H01L21/76224 ,  H01L29/6656

Abstract: A device includes a semiconductor fin, a gate structure, gate spacers, and a dielectric feature. The semiconductor fin is over a substrate. The gate structure is over the semiconductor fin and includes a gate dielectric layer over the semiconductor fin and a gate metal covering the gate dielectric layer. The gate spacers are on opposite sides of the gate structure. The dielectric feature is over the substrate. The dielectric feature is in contact with the gate metal, the gate dielectric layer, and the gate spacers, and an interface between the gate metal and the dielectric feature is substantially aligned with an interface between the dielectric feature and one of the gate spacers.

公开(公告)号：US11289584B2

公开(公告)日：2022-03-29

申请号：US16937164

申请日：2020-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US20230335620A1

公开(公告)日：2023-10-19

申请号：US18336788

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/66553 ,  H01L29/0653 ,  H01L29/42392 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/7853 ,  H01L21/0214

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US20200058650A1

公开(公告)日：2020-02-20

申请号：US16663858

申请日：2019-10-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chang Wen ,  Chang-Yun Chang ,  Hsien-Chin Lin ,  Bone-Fong Wu ,  Ya-Hsiu Lin

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/423 ,  H01L21/28 ,  H01L29/49 ,  H01L21/027 ,  H01L29/66 ,  H01L21/3213 ,  H01L29/06 ,  H01L27/02

Abstract: A semiconductor device includes first and second transistors each having a high-k metal gate disposed over a respective channel region of the transistors. The semiconductor device further includes first and second dielectric features in physical contact with an end of the respective high-k metal gates. The first and second transistors are of a same conductivity type. The two high-k metal gates have a same number of material layers. The first transistor's threshold voltage is different from the second transistor's threshold voltage, and at least one of following is true: the two high-k metal gates have different widths, the first and second dielectric features have different distances from respective channel regions of the two transistors, and the first and second dielectric features have different dimensions.

公开(公告)号：US10461078B2

公开(公告)日：2019-10-29

申请号：US15904585

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chang Wen ,  Chang-Yun Chang ,  Hsien-Chin Lin ,  Bone-Fong Wu ,  Ya-Hsiu Lin

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/027 ,  H01L21/28 ,  H01L29/423

Abstract: A semiconductor device includes first and second transistors each having a high-k metal gate disposed over a respective channel region of the transistors. The semiconductor device further includes first and second dielectric features in physical contact with an end of the respective high-k metal gates. The first and second transistors are of a same conductivity type. The two high-k metal gates have a same number of material layers. The first transistor's threshold voltage is different from the second transistor's threshold voltage, and at least one of following is true: the two high-k metal gates have different widths, the first and second dielectric features have different distances from respective channel regions of the two transistors, and the first and second dielectric features have different dimensions.

公开(公告)号：US12087842B2

公开(公告)日：2024-09-10

申请号：US18336788

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/66553 ,  H01L29/0653 ,  H01L29/42392 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6681 ,  H01L29/7853 ,  H01L21/0214 ,  H01L21/0228

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US20220223718A1

公开(公告)日：2022-07-14

申请号：US17706296

申请日：2022-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US20240379822A1

公开(公告)日：2024-11-14

申请号：US18780150

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bone-Fong Wu ,  Chih-Hao Yu ,  Chia-Pin Lin

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device according to the present disclosure includes a channel member including a first connection portion, a second connection portion and a channel portion disposed between the first connection portion and the second connection portion, a first inner spacer feature disposed over and in contact with the first connection portion, a second inner spacer feature disposed under and in contact with the first connection portion, and a gate structure wrapping around the channel portion of the channel member. The channel member further includes a first ridge on a top surface of the channel member and disposed at an interface between the channel portion and the first connection portion. The first ridge partially extends between the first inner spacer feature and the gate structure.

公开(公告)号：US11437278B2

公开(公告)日：2022-09-06

申请号：US16985174

申请日：2020-08-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chang-Yun Chang ,  Bone-Fong Wu ,  Ming-Chang Wen ,  Ya-Hsiu Lin

IPC: H01L21/8234 ,  H01L21/311 ,  H01L29/08 ,  H01L21/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/324 ,  H01L21/762 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/265

Abstract: A method of forming a semiconductor device includes forming a gate structure over first and second fins over a substrate; forming an interlayer dielectric layer surrounding first and second fins; etching a first trench in the interlayer dielectric layer between the first and second fins uncovered by the gate structure; forming a helmet layer lining the first trench; and forming a dielectric feature in the first trench.