公开(公告)号：US20200227461A1

公开(公告)日：2020-07-16

申请号：US16837351

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US10700117B2

公开(公告)日：2020-06-30

申请号：US16201083

申请日：2018-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yuichiro Yamashita ,  Chun-Hao Chuang ,  Hirofumi Sumi

IPC: H01L27/146

Abstract: Methods for forming an image sensor structure are provided. The method includes forming a light-sensing region in a substrate and forming a storage node adjacent to light-sensing region in the substrate. The method further includes forming a front side isolation structure partially surrounding an upper portion of the light-sensing region and forming a trench fully surrounding a bottom portion of the light-sensing region to expose a bottom surface of the front side isolations structure. The method further includes forming a backside isolation structure in the trench.

公开(公告)号：US20200098808A1

公开(公告)日：2020-03-26

申请号：US16227138

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hau Wu ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Cheng Yu Huang

IPC: H01L27/146

Abstract: An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

公开(公告)号：US09609239B2

公开(公告)日：2017-03-28

申请号：US14831820

申请日：2015-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H04N5/33 ,  H04N5/225

CPC classification number: H04N5/332 ,  H04N5/2254

Abstract: An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.

公开(公告)号：US11923392B2

公开(公告)日：2024-03-05

申请号：US17140346

申请日：2021-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Jen-Cheng Liu ,  Kazuaki Hashimoto ,  Ming-En Chen ,  Shyh-Fann Ting ,  Shuang-Ji Tsai ,  Wei-Chieh Chiang

IPC: H01L27/146 ,  H04N25/11 ,  H04N25/77

CPC classification number: H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H04N25/77 ,  H04N25/11

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

公开(公告)号：US10991740B2

公开(公告)日：2021-04-27

申请号：US16837351

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US10672812B2

公开(公告)日：2020-06-02

申请号：US16505487

申请日：2019-07-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chieh Chiang ,  Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

公开(公告)号：US10651225B2

公开(公告)日：2020-05-12

申请号：US16163908

申请日：2018-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146 ,  H01L23/552 ,  H01L25/04 ,  H01L23/64

Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.

公开(公告)号：US20200098813A1

公开(公告)日：2020-03-26

申请号：US16416583

申请日：2019-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Chien Yu ,  Ting-Cheng Chang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

公开(公告)号：US10347675B2

公开(公告)日：2019-07-09

申请号：US15596085

申请日：2017-05-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chieh Chiang ,  Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.