公开(公告)号：US10347675B2

公开(公告)日：2019-07-09

申请号：US15596085

申请日：2017-05-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chieh Chiang ,  Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

公开(公告)号：US09929198B2

公开(公告)日：2018-03-27

申请号：US14505340

申请日：2014-10-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Keng-Yu Chou ,  Kazuaki Hashimoto ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Wei-Chieh Chiang ,  Pao-Tung Chen

IPC: H01L27/146 ,  H04N5/225 ,  H04N5/33

CPC classification number: H01L27/14621 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/2257 ,  H04N5/332

Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter. The micro-lens layer is disposed on the color filter layer.

公开(公告)号：US20180026067A1

公开(公告)日：2018-01-25

申请号：US15216815

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Wen Lee ,  Kazuaki Hashimoto ,  Kuo-Chung Yee

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/02 ,  H01L24/13 ,  H01L24/14 ,  H01L24/19 ,  H01L25/50 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469 ,  H01L2224/02379 ,  H01L2224/13024 ,  H01L2224/14135 ,  H01L2924/1433 ,  H01L2924/1436

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) package is provided. The image sensor package comprises a first integrated circuit (IC) die, a second IC die, and a fan-out structure. The first IC die comprises a pixel sensor array, and the second IC die is under and bonded to the first IC die. Further, the fan-out structure is under and bonded to the second IC die. The fan-out structure comprises a third IC die, a fan-out dielectric layer laterally adjacent to the third IC die, a through insulator via (TIV) extending through the fan-out dielectric layer, and one or more redistribution layers (RDLs) under the third IC die and the TIV. The one or more RDLs electrically couple to the third IC die and the TIV. A method for manufacturing the CIS package is also provided.

公开(公告)号：US11276716B2

公开(公告)日：2022-03-15

申请号：US17019502

申请日：2020-09-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146 ,  G01J1/02 ,  G01J1/44

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector.

公开(公告)号：US11158664B2

公开(公告)日：2021-10-26

申请号：US16837280

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146 ,  H01L23/552 ,  H01L25/04 ,  H01L23/64

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first image sensor disposed within a first substrate and a second image sensor disposed within a second substrate. The second substrate has a first side facing the first substrate. The first side includes angled surfaces defining one or more recesses within the first side. A band-pass filter is arranged between the first substrate and the second substrate and is configured to reflect electromagnetic radiation that is within a first range of wavelengths.

公开(公告)号：US20210265408A1

公开(公告)日：2021-08-26

申请号：US17236311

申请日：2021-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US20200235159A1

公开(公告)日：2020-07-23

申请号：US16837280

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146 ,  H01L23/552 ,  H01L25/04 ,  H01L23/64

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first image sensor disposed within a first substrate and a second image sensor disposed within a second substrate. The second substrate has a first side facing the first substrate. The first side includes angled surfaces defining one or more recesses within the first side. A band-pass filter is arranged between the first substrate and the second substrate and is configured to reflect electromagnetic radiation that is within a first range of wavelengths.

公开(公告)号：US20200227460A1

公开(公告)日：2020-07-16

申请号：US16837312

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US20200098801A1

公开(公告)日：2020-03-26

申请号：US16695575

申请日：2019-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US20200035733A1

公开(公告)日：2020-01-30

申请号：US16156061

申请日：2018-10-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.