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    Active matrix substrate and switching element
    21.
    发明授权
    Active matrix substrate and switching element 失效
    有源矩阵基板和开关元件

    公开(公告)号：US5726461A

    公开(公告)日：1998-03-10

    申请号：US581965

    申请日：1996-01-02

    申请人： Takayuki Shimada ,  Atsushi Ban ,  Kazuko Hirakawa

    发明人： Takayuki Shimada ,  Atsushi Ban ,  Kazuko Hirakawa

    IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L23/538 ,  H01L29/45 ,  H01L29/786 ,  H01L29/04 ,  H01L33/00

    CPC分类号： H01L29/458 ,  H01L23/538 ,  H01L29/78618 ,  G02F1/1368 ,  H01L2924/0002

    摘要： An active matrix substrate comprises an insulation substrate, a plurality of pixel electrodes arranged in a matrix form on the insulation substrate, a switching element provided for each of the pixel electrodes, gate signal lines for supplying a signal to the switching elements, and source signal lines for supplying a data signal to the pixel electrodes via the corresponding switching elements. Each switching element is a thin film transistor (TFT) including a gate electrode, an insulating layer formed on the insulation substrate to cover the gate electrode, a semiconductor layer formed on the insulating layer opposite to the gate electrode, a source electrode formed on one end of the semiconductor layer, one of the source signal lines overlapping the source electrode, and a drain electrode formed on the other end of the semiconductor layer, one of the gate signal lines overlapping the drain electrode. The source and drain electrodes have a two-layer structure of an upper amorphous semiconductor layer and a lower micro-crystalline semiconductor layer. The source signal lines have a two-layer structure of an upper conductive layer and a lower protection layer.

    摘要翻译： 有源矩阵基板包括绝缘基板，以矩阵形式布置在绝缘基板上的多个像素电极，为每个像素电极设置的开关元件，用于向开关元件提供信号的栅极信号线以及源极信号 用于经由相应的开关元件向像素电极提供数据信号的线。 每个开关元件是薄膜晶体管（TFT），其包括栅电极，形成在绝缘基板上以覆盖栅电极的绝缘层，形成在与栅电极相对的绝缘层上的半导体层，形成在一个栅电极上的源电极 半导体层的一端，与源电极重叠的源极信号线之一和在半导体层的另一端上形成的漏极，栅极信号线之一与漏极重叠。 源极和漏极具有上部非晶半导体层和下部微晶半导体层的两层结构。 源极信号线具有上导电层和下保护层的双层结构。