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公开(公告)号：US4916710A
公开(公告)日：1990-04-10
申请号：US347259
申请日：1989-05-04
申请人： Ryo Hattori
发明人： Ryo Hattori
CPC分类号： H01S5/4031 , H01L2924/0002 , H01S5/0207 , H01S5/0224 , Y10S148/095
摘要： A multi-point light emission type semiconductor laser device including a plurality of light emission points which are produced on a p type or n type semiconductor layer monolithically and are capable of being driven independently includes electrically insulating or semi-insulating semiconductor regions provided at intermediate portions of light emission points in the p type or n type semiconductor layer. A separation groove is further produced up to reaching the insulating or semi-insulating regions from the side opposite to the semiconductor layer. Thus, respective light emission points are perfectly electrically separated each other by this separation groove and the region.
摘要翻译： 包括多个发光点的多点发光型半导体激光器装置，其单独地制造在p型或n型半导体层上，并且能够独立地被驱动，包括设在中间部分的电绝缘或半绝缘半导体区域 p型或n型半导体层中的发光点。 进一步产生分离槽，以从与半导体层相对的一侧到达绝缘或半绝缘区域。 因此，各个发光点通过该分离槽和该区域完全电隔离。
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公开(公告)号：US08238969B2
公开(公告)日：2012-08-07
申请号：US12256612
申请日：2008-10-23
申请人： Hiroaki Matsuda , Tatsuhito Araki , Yoshiya Matsumoto , Manabu Sotodate , Wataru Murata , Ken Shoji , Ryo Hattori
发明人： Hiroaki Matsuda , Tatsuhito Araki , Yoshiya Matsumoto , Manabu Sotodate , Wataru Murata , Ken Shoji , Ryo Hattori
IPC分类号： H04M1/00
CPC分类号： H04M1/72541 , H04M1/0214 , H04M1/026
摘要： A mobile device includes a trigger having a rod-like body fixed at one end. A housing has a first hole into which the body is inserted. A sensor detects that the trigger has been operated in the direction in which the body is pulled from the hole. A buzzer is activated in response to the sensor's having detected the operation of the trigger. A second hole is formed in a firmly fitted member. The body is inserted in the second hole so as to be freely slid forward or backward against the hole. The fitted member is fitted firmly in the entrance portion of the first hole; and a sealing member contacts the internal wall of the first hole and the body.
摘要翻译： 移动装置包括具有固定在一端的杆状体的触发器。 壳体具有插入身体的第一孔。 传感器检测到触发器已经沿着主体从孔中拉出的方向操作。 响应于传感器检测到触发器的操作，蜂鸣器被激活。 第二孔形成在牢固配合的构件中。 主体被插入到第二孔中，以便能够相对于孔自由地向前或向后滑动。 装配的构件牢固地装配在第一孔的入口部分中; 并且密封构件接触第一孔和主体的内壁。
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公开(公告)号：US20100134968A1
公开(公告)日：2010-06-03
申请号：US12579641
申请日：2009-10-15
IPC分类号： H05K5/02
CPC分类号： H04M1/185 , H04M1/0214 , H04M2250/16
摘要： A mobile terminal device includes a display section; a housing including a frame member forming an opening for accommodating the display section; a transparent plate member disposed over the display section; a metal panel member disposed over the frame member so as to expose the transparent plate member; and an adhesive member having an adhesive obverse surface and an adhesive reverse surface placed between the frame member and each of the transparent plate member and the metal panel member, the adhesive reverse surface being adhesively fixed to the frame member, the adhesive obverse surface being adhesively fixed to the transparent plate member and the metal panel member.
摘要翻译： 移动终端装置包括：显示部; 壳体，包括形成用于容纳所述显示部的开口的框架构件; 设置在所述显示部上的透明板部件; 设置在所述框架构件上以暴露所述透明板构件的金属面板构件; 以及具有粘合剂正面的粘合剂构件和布置在框架构件和透明板构件和金属面板构件之间的粘合剂反面，粘合剂反面粘合地固定到框架构件，粘合剂正面被粘合地 固定到透明板构件和金属面板构件。
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公开(公告)号：US07042053B2
公开(公告)日：2006-05-09
申请号：US10724056
申请日：2003-12-01
申请人： Tetsuo Kunii , Ryo Hattori , Hiroshi Kawata
发明人： Tetsuo Kunii , Ryo Hattori , Hiroshi Kawata
CPC分类号： H01L23/4824 , H01L23/3171 , H01L23/3677 , H01L2924/0002 , H01L2924/12044 , H01L2924/3511 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate having a principal plane on which gate, source, and drain electrodes are located. A film made of a polymer with a low dielectric constant is over the gate and drain electrodes to insulate the gate and drain electrodes from the source electrodes. A chip surface electrode located over the low-dielectric-constant polymer film and the source electrode, and connected to ground potential. The source electrode is provided with the ground potential through the chip surface electrode.
摘要翻译： 半导体器件包括具有主平面的半导体衬底，栅极，源极和漏极位于该主平面上。 由具有低介电常数的聚合物制成的膜在栅极和漏极之上，以使栅极和漏极与源电极绝缘。 位于低介电常数聚合物膜和源极上的芯片表面电极，并连接到地电位。 源电极通过芯片表面电极提供接地电位。
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公开(公告)号：US06819119B2
公开(公告)日：2004-11-16
申请号：US10347412
申请日：2003-01-21
申请人： Yoshitsugu Yamamoto , Satoshi Suzuki , Ryo Hattori
发明人： Yoshitsugu Yamamoto , Satoshi Suzuki , Ryo Hattori
IPC分类号： G01R2728
CPC分类号： G01R31/2608
摘要： In a method for evaluating a crystalline semiconductor substrate which includes a collector layer, a base layer, and an emitter layer and is used for a heterojunction bipolar transistor, a layer is provided having the same composition as the base layer. The semiconductor substrate is irradiated with excitation light and change with time in intensity of photoluminescence from the layer is measured before the intensity becomes saturated. The change with time in current gain of the heterojunction bipolar transistor produced using the semiconductor substrate is determined from the change with time in the intensity.
摘要翻译： 在用于评价包括集电极层，基极层和发射极层并且用于异质结双极晶体管的晶体半导体衬底的方法中，提供具有与基底层相同的组成的层。 用激发光照射半导体衬底，并且在强度变得饱和之前测量来自层的光致发光强度随时间的变化。 使用半导体衬底产生的异质结双极晶体管的电流增益随时间的变化由强度随时间的变化确定。
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公开(公告)号：US06791335B2
公开(公告)日：2004-09-14
申请号：US09941879
申请日：2001-08-29
申请人： Taisei Hirayama , Masanobu Inami , Shuichi Matsuo , Koichiro Ito , Ryo Hattori , Yoshitugu Yamamoto , Yoshihiro Notani , Shinichi Miyakuni
发明人： Taisei Hirayama , Masanobu Inami , Shuichi Matsuo , Koichiro Ito , Ryo Hattori , Yoshitugu Yamamoto , Yoshihiro Notani , Shinichi Miyakuni
IPC分类号： G01N2500
CPC分类号： G01N25/486
摘要： In a sample assembly for a thermoelectric analyzer, typically TSC (Thermally Stimulated Current) analyzer, a sample is fixed to an electrically-insulating substrate via an adhesive layer. The material of the adhesive layer is indium or gold-tin alloy. The substrate has a pair of junction electrode layers formed thereon and a pair of electrode layers formed on the same plane of the sample. One of the electrode layers is connected with one of the junction electrode layers by electrically-conductive wire, while the other of the electrode layers is connected with the other of the junction electrode layers by another electrically-conductive wire. The substrate is made of preferably made of a highly electrically-insulating and highly thermally-conductive material which may be, for example, aluminum nitride (AlN), boron nitride (BN), beryllium oxide (BeO) or aluminum oxide (Al2O3). The sample may preferably be a compound semiconductor such as GaAs.
摘要翻译： 在用于热电分析仪的样品组件（通常为TSC（热刺激电流））分析仪中，样品通过粘合剂层固定到电绝缘基底上。 粘合剂层的材料是铟或金 - 锡合金。 基板具有形成在其上的一对接电极层和形成在样品的同一平面上的一对电极层。 一个电极层通过导电线与一个接合电极层连接，而另一个电极层通过另一个导电线与另一个接合电极层连接。 基板由优选由高电绝缘性和高导热性材料制成，其可以是例如氮化铝（AlN），氮化硼（BN），氧化铍（BeO）或氧化铝（Al 2 O 3）。 样品可优选为化合物半导体，例如GaAs。
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27.发明授权
公开(公告)号：US6043520A
公开(公告)日：2000-03-28
申请号：US156652
申请日：1998-09-18
申请人： Yoshitsugu Yamamoto , Ryo Hattori
发明人： Yoshitsugu Yamamoto , Ryo Hattori
IPC分类号： H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/7371 , H01L29/7304
摘要： A hetero-junction bipolar transistor having high reliability wherein a ballast resistance is exactly controlled and deterioration in current stability is eliminated. A GaAs ballast resistor layer is provided in a hetero-junction bipolar transistor having a GaAs emitter layer, an InGaP spacer layer, and a GaAs base layer, preventing a notch from being formed in the conduction band at the interface of the emitter layer and the ballast resistor layer, exactly controlling the ballast resistance. The AlGaAs layer is prevented from trapping impurities and the current stability is prevented from deteriorating.
摘要翻译： 具有高可靠性的异质结双极晶体管，其中镇流电阻被精确控制，并且消除了电流稳定性的劣化。 在具有GaAs发射极层，InGaP间隔层和GaAs基极层的异质结双极晶体管中提供GaAs镇流电阻层，防止在发射极层和 镇流电阻层，精确控制镇流电阻。 防止AlGaAs层捕获杂质，防止电流稳定性恶化。
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28.发明授权
公开(公告)号：US5523840A
公开(公告)日：1996-06-04
申请号：US262840
申请日：1994-06-21
申请人： Seiji Nishizawa , Tokuji Takahashi , Ryo Hattori
发明人： Seiji Nishizawa , Tokuji Takahashi , Ryo Hattori
CPC分类号： G01B11/0625
摘要： An interference waveform dispersion spectrum of light reflected from a multi-layer film is compared to a waveform obtained by numerical calculation using an optical characteristic matrix. Respective layer thickness values obtained from the calculated analysis of the Spatial interference waveform are subjected to waveform fitting with actually measured values. The theoretical interference spectrum is recalculated while changing approximate values of the layer thicknesses until a match is obtained to obtain precise respective layer thicknesses. The thicknesses of respective layers of a thin multi-layer film of submicron thicknesses can be non-destructively measured exactly and stably without direct contact.
摘要翻译： 将从多层膜反射的光的干涉波形色散谱与通过使用光学特性矩阵的数值计算获得的波形进行比较。 从计算出的空间干涉波形分析获得的各层厚度值，经实际测量值进行波形拟合。 重新计算理论干涉谱，同时改变层厚度的近似值，直到获得匹配以获得精确的各层厚度。 亚微米厚度的薄多层膜的各层的厚度可以非直接地非破坏性地测量而不直接接触。
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公开(公告)号：US5111471A
公开(公告)日：1992-05-05
申请号：US638333
申请日：1991-01-07
申请人： Ryo Hattori
发明人： Ryo Hattori
CPC分类号： H01S5/227 , H01S5/2275
摘要： A novel semiconductor laser device includes a P-type semiconductor substrate, an N-type InP current blocking layer on the substrate, a P-type InP buried layer of which has the same thickness as and is surrounded by the first current blocking layer, and a ridge, on the buried layer, having a double heterojunction structure therein and including a stack of a planar P-type first InP cladding layer, a planar InGaAsP active layer, and a planar N-type second InP cladding layer. The ridge has a width of the same order as that of the buried layer. A P-type InP current blocking layer is disposed on the N-type current blocking layer burying the ridge and an N-type contact layer is formed opposite and in contact with the P-type current blocking layer and the N-type cladding layer. The conductivity types of the layers can be reversed.
摘要翻译： 一种新型的半导体激光器件包括P型半导体衬底，衬底上的N型InP电流阻挡层，P型InP掩埋层的厚度与第一电流阻挡层相同并被第一电流阻挡层包围， 掩埋层上的具有双异质结结构的脊，包括平面P型第一InP包覆层，平面InGaAsP有源层和平面N型第二InP包覆层的叠层。 脊的宽度与埋层的宽度相同。 P型InP电流阻挡层设置在埋入脊的N型电流阻挡层上，并且N型接触层形成为与P型电流阻挡层和N型覆层相对且接触。 层的导电类型可以颠倒。
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30.发明授权
公开(公告)号：US5047364A
公开(公告)日：1991-09-10
申请号：US490309
申请日：1990-03-08
申请人： Ryo Hattori
发明人： Ryo Hattori
CPC分类号： H01S5/4031 , H01L2924/0002 , H01S5/0207 , H01S5/0224 , Y10S148/095
摘要： A multi-point light emission type semiconductor laser device including a plurality of light emission points which are produced on a p type or n type semiconductor layer monolithically and are capable of being driven independently includes electrically insulating or semi-insulating semiconductor regions provided at intermediate portions of light emission points in the p type or n type semiconductor layer. A separation groove is further produced up to reaching the insulating or semi-insulating regions from the side opposite to the semiconductor layer. Thus, respective light emission points are perfectly electrically separated each other by this separation groove and the region.
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