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34 条记录 (耗时 0.027 秒)

    Semiconductor device and manufacturing method therefor
    26.
    发明授权
    Semiconductor device and manufacturing method therefor 有权
    半导体装置及其制造方法

    公开(公告)号：US07560341B2

    公开(公告)日：2009-07-14

    申请号：US11624346

    申请日：2007-01-18

    申请人： Yuko Ohgishi

    发明人： Yuko Ohgishi

    IPC分类号： H01L21/00

    CPC分类号： H01L29/4916 ,  H01L27/0629

    摘要： The gate electrode of a high-voltage transistor having a high breakdown voltage is formed from a polysilicon layer having a larger average grain size, so that depletion of the gate electrode easily occurs. By utilizing this depletion, the electrical effective film thickness required by the gate dielectric film of the transistor can be increased. In contrast, the gate electrode of a high-performance transistor needs to have a high speed and a large drive current is formed from a polysilicon layer having a smaller average grain size, so that depletion of the gate electrode hardly occurs. Accordingly, the electrical effective film thickness of the gate dielectric film of the transistor can be maintained at a small value.

    摘要翻译： 具有高击穿电压的高压晶体管的栅电极由平均晶粒尺寸较大的多晶硅层形成，从而易于发生栅电极的耗尽。 通过利用这种耗尽，可以增加晶体管的栅极电介质膜所需的电学有效膜厚度。 相反，高性能晶体管的栅电极需要高速度，并且由具有较小平均晶粒尺寸的多晶硅层形成较大的驱动电流，从而几乎不发生栅电极的耗尽。 因此，晶体管的栅极电介质膜的电气有效膜厚度可以保持在较小的值。

    Method of Producing Semiconductor Device and Semiconductor Device
    27.
    发明申请
    Method of Producing Semiconductor Device and Semiconductor Device 有权
    生产半导体器件和半导体器件的方法

    公开(公告)号：US20080199994A1

    公开(公告)日：2008-08-21

    申请号：US11622642

    申请日：2007-01-12

    申请人： Yuko Ohgishi

    发明人： Yuko Ohgishi

    IPC分类号： H01L21/8242 ,  H01L21/8234

    CPC分类号： H01L21/823462 ,  H01L21/82345

    摘要： A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not different, where gate electrodes of high withstand voltage use transistors to which high power source voltages are supplied contain an impurity at a relatively low concentration, so the gate electrodes are easily depleted at the time of application of the gate voltage; depletion of the gate electrodes is equivalent to increasing the thickness of the gate insulating films; the electrical effective thicknesses required of the gate insulating films can be made thicker; and the gate electrodes of high performance transistors for which a high speed and large drive current are required do not contain an impurity at a high concentration where depletion of the gate electrodes will not occur, so the electrical effective thickness of the gate insulating films is kept thin.

    摘要翻译： 即使绝缘膜的物理厚度不同，即使使用高电压的栅电极也使用晶体管的电极，也能够通过使用电子电路元件的电极的耗尽来确保电子电路元件的绝缘膜所需的电气有效厚度的半导体器件 提供高电源电压的杂质含有较低浓度的杂质，因此在施加栅极电压时，栅电极容易耗尽; 栅电极的耗尽等于增加栅极绝缘膜的厚度; 可以使栅极绝缘膜所需的电气有效厚度更厚; 并且需要高速度和大驱动电流的高性能晶体管的栅电极不含有不会发生栅极电极耗尽的高浓度的杂质，所以栅极绝缘膜的电有效厚度保持 瘦。

    Method of producing semiconductor device and semiconductor device
    28.
    发明授权
    Method of producing semiconductor device and semiconductor device 有权
    半导体器件和半导体器件的制造方法

    公开(公告)号：US07205619B2

    公开(公告)日：2007-04-17

    申请号：US10806588

    申请日：2004-03-23

    申请人： Yuko Ohgishi

    发明人： Yuko Ohgishi

    IPC分类号： H01L29/94

    CPC分类号： H01L21/823462 ,  H01L21/82345

    摘要： A semiconductor device able to secure electrical effective thicknesses required for insulating films of electronic circuit elements by using depletion of electrodes of the electronic circuit elements even if the physical thicknesses of the insulating films are not different, where gate electrodes of high withstand voltage use transistors to which high power source voltages are supplied contain an impurity at a relatively low concentration, so the gate electrodes are easily depleted at the time of application of the gate voltage; depletion of the gate electrodes is equivalent to increasing the thickness of the gate insulating films; the electrical effective thicknesses required of the gate insulating films can be made thicker; and the gate electrodes of high performance transistors for which a high speed and large drive current are required do not contain an impurity at a high concentration where depletion of the gate electrodes will not occur, so the electrical effective thickness of the gate insulating films is kept thin.

    摘要翻译： 即使绝缘膜的物理厚度不同，即使使用高电压的栅电极也使用晶体管的电极，也能够通过使用电子电路元件的电极的耗尽来确保电子电路元件的绝缘膜所需的电气有效厚度的半导体器件 提供高电源电压的杂质含有较低浓度的杂质，因此在施加栅极电压时，栅电极容易耗尽; 栅电极的耗尽等于增加栅极绝缘膜的厚度; 可以使栅极绝缘膜所需的电气有效厚度更厚; 并且需要高速度和大驱动电流的高性能晶体管的栅极电极不含有不会发生栅电极耗尽的高浓度的杂质，所以栅极绝缘膜的电有效厚度保持 瘦。

    SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
    30.
    发明申请
    SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS 有权
    固态成像装置，其制造方法和成像装置

    公开(公告)号：US20110164159A1

    公开(公告)日：2011-07-07

    申请号：US13047275

    申请日：2011-03-14

    申请人： Yuko Ohgishi

    发明人： Yuko Ohgishi

    IPC分类号： H04N5/335 ,  H01L27/146 ,  H01L31/18

    CPC分类号： H04N5/361 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14887 ,  H04N5/369 ,  H04N5/378

    摘要： A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

    摘要翻译： 一种固态成像装置，包括：形成在半导体衬底中的多个传感器部分，以将入射光转换成电信号; 形成在所述半导体衬底中以便位于所述传感器部分旁边的外围电路部分; 以及在传感器部分的光入射侧形成负固定电荷的层，以便在传感器部分的光接收表面上形成空穴积聚层。