摘要:
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc) (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
摘要:
A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 μm or more and 300 μm or less and crystal grains B having an equivalent circular diameter of 0.5 μm or more and 3 μm or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure.
摘要:
The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.
摘要:
The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.
摘要:
A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.
摘要:
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc) (1) where, Cc is a count number of a peak of a (001′)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
摘要:
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc) (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
摘要翻译:本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:<?in-line-formula description =“In-line Formulas”end =“lead”?> u =(C sub> C 其中C是在平面外X射线衍射测量中电介质膜的(001')面的峰的计数(这里,l'是 选择的自然数使得C SUB>变得最大); 在平面X射线衍射测量中,电介质膜的(h'00)面的峰值的计数数(这里,h'是选择的自然数,使得C SUB>变为最大); WC是在平面外的摇摆曲线X射线衍射测定中的电介质膜的(001')面的峰值的半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的(h'00)面的峰值的半值宽度。
摘要:
The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc) (1) where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.
摘要翻译:本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:<?in-line-formula description =“In-line Formulas”end =“lead”?> u =(C sub> C 其中,C是在平面外X射线衍射测量中电介质膜的(001)面的峰值的计数(这里,l'是 选择的自然数使得C SUB>变得最大); 在平面X射线衍射测量中,电介质膜的(h'00)面的峰值的计数数(这里,h'是选择的自然数,使得C SUB>变为最大); 在平面外的摇摆曲线X射线衍射测量中,电介质薄膜的(001')面的峰值的半值宽度是半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的(h'00)面的峰值的半值宽度。
摘要:
A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.
摘要:
A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 μm or more and 300 μm or less and crystal grains B having an equivalent circular diameter of 0.5 μm or more and 3 μm or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure.