公开(公告)号：US07938515B2

公开(公告)日：2011-05-10

申请号：US12389710

申请日：2009-02-20

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：u =（Cc / Ca）×（Wa / Wc）（1）其中，Cc是介电膜的（001'）面的峰的计数 平面外X射线衍射测量（这里，1'是选择为Cc变为最大的自然数）; Ca是In平面X射线衍射测定中的电介质膜的（h'00）面的峰值的计数数（这里，h'是选择为Cc变为最大的自然数）; Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的（h'00）面的峰值的半值宽度。

公开(公告)号：US07513608B2

公开(公告)日：2009-04-07

申请号：US11338774

申请日：2006-01-25

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， u =（Cc / Ca）×（Wa / Wc）（1）中的绝对值大于2的实数：<？in-line-formula description =“In-line formula”end =“lead” <？in-line-formula description =“In-line formula”end =“tail”？>其中，Cc是平面外的电介质膜的（001'）面的峰值的计数数 X射线衍射测量（这里，l'是选择的自然数，使得Cc变为最大）; Ca是In平面X射线衍射测定中的电介质膜的（h'00）面的峰值的计数数（这里，h'是选择为Cc变为最大的自然数）; Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的（h'00）面的峰值的半值宽度。

公开(公告)号：US20060176342A1

公开(公告)日：2006-08-10

申请号：US11338774

申请日：2006-01-25

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：<？in-line-formula description =“In-line Formulas”end =“lead”？> u =（C C _{其中C是在平面外X射线衍射测量中电介质膜的（001'）面的峰的计数（这里，l'是 选择的自然数使得C 变得最大）; 在平面X射线衍射测量中，电介质膜的（h'00）面的峰值的计数数（这里，h'是选择的自然数，使得C 变为最大）; WC是在平面外的摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的（h'00）面的峰值的半值宽度。}

公开(公告)号：US07059711B2

公开(公告)日：2006-06-13

申请号：US10769765

申请日：2004-02-03

申请人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

发明人： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  H01L41/0973 ,  H01L41/316

摘要： The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (00l′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

摘要翻译： 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， 关于电介质膜是大于2的实数：<？in-line-formula description =“In-line Formulas”end =“lead”？> u =（C C _{其中，C是在平面外X射线衍射测量中电介质膜的（001）面的峰值的计数（这里，l'是 选择的自然数使得C 变得最大）; 在平面X射线衍射测量中，电介质膜的（h'00）面的峰值的计数数（这里，h'是选择的自然数，使得C 变为最大）; 在平面外的摇摆曲线X射线衍射测量中，电介质薄膜的（001'）面的峰值的半值宽度是半值宽度; 并且W a a是在平面内的摇摆曲线X射线衍射测量中电介质膜的（h'00）面的峰值的半值宽度。}

公开(公告)号：US07622852B2

公开(公告)日：2009-11-24

申请号：US12031176

申请日：2008-02-14

申请人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

发明人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Kenichi Takeda ,  Hiroshi Funakubo ,  Hiroshi Nakaki ,  Rikyu Ikariyama ,  Osami Sakata

IPC分类号： H01L41/04 ,  H01L41/187

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

摘要翻译： 本发明提供一种压电性能大的压电膜，以及压电元件，液体排出头和利用该压电元件的液体排出装置。 压电膜由具有至少四方晶系结构的<100>取向的外延氧化物形成，其中氧化物是由通式ABO 3表示的钙钛矿型复合氧化物，并且至少含有C，D和E的畴， 100]取向在晶体方向上具有相互偏离，其中区域C和D中的结构域C和D中的结构域D和E中的区域C和E以及区域D和E中的角度偏差分别为5°或更小，5 °或更小，0.3°以下，0.3°以上，域C，E以及区域D，E的[001]方向的角度偏差分别为1.0°以上1.0°以上。

公开(公告)号：US07144101B2

公开(公告)日：2006-12-05

申请号：US10532020

申请日：2004-01-30

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

公开(公告)号：US20060256167A1

公开(公告)日：2006-11-16

申请号：US11491027

申请日：2006-07-24

申请人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

发明人： Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Katsumi Aoki ,  Takanori Matsuda ,  Masaru Shimizu

IPC分类号： B41J2/045

CPC分类号： H01L41/41 ,  B41J2/14233 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

摘要翻译： 一种包括上电极，压电和/或电致伸缩材料和下电极的压电元件，其特征在于压电和/或电致伸缩材料是由通式ABO 3构成的复合氧化物， 压电和/或电致伸缩材料具有双晶。

公开(公告)号：US20050213020A1

公开(公告)日：2005-09-29

申请号：US11085091

申请日：2005-03-22

申请人： Kenichi Takeda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto

发明人： Kenichi Takeda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shoji Okamoto

IPC分类号： B41J2/16 ,  B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  H01L21/02 ,  H01L41/047 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  C09K19/02

CPC分类号： H01L41/0478 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316

摘要： A dielectric member including, on a substrate, a lower electrode, an oriented dielectric layer, and an upper electrode, in which at least either of the electrodes has an at least two-layered structure constituted of perovskite type oxide conductive layers, and has an orientation.

摘要翻译： 一种电介质构件，在基板上包括下电极，取向介质层和上电极，其中至少任一个电极具有由钙钛矿型氧化物导电层构成的至少两层结构，并且具有 方向。

公开(公告)号：US07857431B2

公开(公告)日：2010-12-28

申请号：US11813943

申请日：2006-01-18

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Risako Ueno ,  Shoji Okamoto

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Risako Ueno ,  Shoji Okamoto

IPC分类号： B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316 ,  H01L41/319

摘要： A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of the piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of ±10° with respect to the surface of the substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

摘要翻译： 压电体元件在基板上具有与压电体膜连接的压电体膜和一对电极，压电体膜的主要成分为Pb（Zr，Ti）O 3，Zr /（Zr + Ti）超过0.4但小于0.7时，压电体膜是至少具有相对于基板的表面±10°的四方晶系a畴和c域的膜， c域的体积率相对于a域和c域的总和等于或大于20％且等于或小于60％。

公开(公告)号：US08846556B2

公开(公告)日：2014-09-30

申请号：US12952644

申请日：2010-11-23

申请人： Makoto Kubota ,  Tatsuo Furuta ,  Hiroshi Saito ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui

发明人： Makoto Kubota ,  Tatsuo Furuta ,  Hiroshi Saito ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui

IPC分类号： B41J2/045 ,  C04B35/00 ,  H01L41/00 ,  H02N2/00 ,  H01L41/18 ,  H01L41/187 ,  C04B35/468 ,  C04B35/628 ,  H01L41/09 ,  C04B35/626 ,  H02N2/10 ,  H02N2/16

CPC分类号： H01L41/1871 ,  C04B35/468 ,  C04B35/4682 ,  C04B35/62655 ,  C04B35/62805 ,  C04B35/62886 ,  C04B2235/3208 ,  C04B2235/3236 ,  C04B2235/3262 ,  C04B2235/449 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/77 ,  C04B2235/783 ,  C04B2235/786 ,  C04B2235/96 ,  H01L41/09 ,  H01L41/0973 ,  H01L41/43 ,  H02N2/106 ,  H02N2/163

摘要： A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 μm or more and 300 μm or less and crystal grains B having an equivalent circular diameter of 0.5 μm or more and 3 μm or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure.

摘要翻译： 一种压电陶瓷，其包含钛酸钡，相对于钛酸钡为0.04质量％以上且0.20质量％以下的锰。 压电陶瓷由晶粒组成。 晶粒包括等效圆直径为30μm以上且300μm以下的晶粒A和等效圆直径为0.5μm以上且3μm以下的晶粒B. 晶粒A和晶粒B分别形成聚集体，并且晶粒A的聚集体和晶粒B的聚集体形成海岛结构。