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    Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head
    1.
    发明授权
    Epitaxial film, piezoelectric element, ferroelectric element, manufacturing methods of the same, and liquid discharge head 有权
    外延膜，压电元件，铁电元件，其制造方法和液体排出头

    公开(公告)号：US08198199B2

    公开(公告)日：2012-06-12

    申请号：US12526308

    申请日：2008-03-05

    Applicant: Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    Inventor： Jumpei Hayashi ,  Takanori Matsuda ,  Tetsuro Fukui ,  Hiroshi Funakubo

    IPC: H01L21/31

    CPC classification number: H01L41/0973 ,  H01L41/0815 ,  H01L41/319

    Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; andforming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1−y)B  (1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3−(1−x)BO2  (2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

    Abstract translation: 公开了一种外延膜，其包括：在基板的表面上加热具有膜厚为1.0nm以上至10nm以下的SiO 2层的Si基板; 并使用由以下组成式表示的金属靶在SiO 2层上形成：yA（1-y）B（1），其中A是选自由Y和 Sc，B为Zr，y为0.03以上且0.20以下的数值，外延膜由以下组成式表示：xA 2 O 3 - （1-x）BO 2（2），其中A和B分别为 与组成式（1）的A和B相同的元素，x是0.010以上至0.035以下的数值。

    Piezoelectric substance element, liquid discharge head utilizing the same and optical element
    3.
    发明授权
    Piezoelectric substance element, liquid discharge head utilizing the same and optical element 有权
    压电体元件，利用其的液体排出头和光学元件

    公开(公告)号：US07759845B2

    公开(公告)日：2010-07-20

    申请号：US11683100

    申请日：2007-03-07

    Applicant: Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

    Inventor： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

    IPC: H01L41/08

    CPC classification number: B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

    Abstract: An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

    Abstract translation: 可以提供作为光调制元件的透明度和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极。 压电体膜不含有层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    7.
    发明授权
    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head 有权
    电介质膜结构，使用电介质膜结构的压电致动器和喷墨头

    公开(公告)号：US07513608B2

    公开(公告)日：2009-04-07

    申请号：US11338774

    申请日：2006-01-25

    Applicant: Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

    Inventor： Hiroshi Aoto ,  Kenichi Takeda ,  Tetsuro Fukui ,  Toshihiro Ifuku

    IPC: B41J2/045

    CPC classification number: B41J2/14233 ,  H01L41/0973 ,  H01L41/316

    Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′)face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

    Abstract translation: 本发明提供了一种电介质膜结构，其具有设置在基板上的基板和电介质膜，并且其中电介质膜相对于基板具有（001）面取向，并且其中以下等式（1）中的值u， u =（Cc / Ca）×（Wa / Wc）（1）中的绝对值大于2的实数：<？in-line-formula description =“In-line formula”end =“lead” <？in-line-formula description =“In-line formula”end =“tail”？>其中，Cc是平面外的电介质膜的（001'）面的峰值的计数数 X射线衍射测量（这里，l'是选择的自然数，使得Cc变为最大）; Ca是In平面X射线衍射测定中的电介质膜的（h'00）面的峰值的计数数（这里，h'是选择为Cc变为最大的自然数）; Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的（001'）面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的（h'00）面的峰值的半值宽度。

    Dielectric element, piezoelectric element, ink jet head and ink jet recording apparatus and manufacturing method of same
    8.
    发明授权
    Dielectric element, piezoelectric element, ink jet head and ink jet recording apparatus and manufacturing method of same 有权
    电介质元件，压电元件，喷墨头和喷墨记录设备及其制造方法

    公开(公告)号：US07453188B2

    公开(公告)日：2008-11-18

    申请号：US11062586

    申请日：2005-02-23

    Applicant: Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

    Inventor： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

    IPC: H01L41/08

    CPC classification number: H01G4/1227 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01G4/10 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

    Abstract: A dielectric element includes a lower electrode layer provided on a substrate, a dielectric layer provided on the lower electrode layer and an upper electrode layer provided on the dielectric layer. The dielectric layer has a first dielectric layer provided on a side of the lower electrode layer, and a second dielectric layer provided on a side of the upper electrode layer. The second dielectric layer is a layer comprised mainly of an oxide including four or more kinds of metal element components, and the first dielectric layer does not substantially include at least one component selected from metal elements included in the oxide layer of the second dielectric layer and is comprised mainly of an oxide including at least three components selected from the remaining metal elements without substantially including Ti and Zr elements.

    Abstract translation: 电介质元件包括设置在基板上的下电极层，设置在下电极层上的电介质层和设置在电介质层上的上电极层。 电介质层具有设置在下电极层一侧的第一电介质层和设置在上电极层一侧的第二电介质层。 第二电介质层是主要由包括四种或更多种金属元素组分的氧化物组成的层，并且第一介电层基本上不包括选自包含在第二介电层的氧化物层中的金属元素中的至少一种成分， 主要由包括至少三种选自剩余金属元素的组分的氧化物组成，而基本不包括Ti和Zr元素。

    BaTiO3 - PbTiO3 SERIES SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC TYPE ACTUATOR AND LIQUID DISCHARGE HEAD USING SUCH PIEZOELECTRIC TYPE ACTUATOR
    9.
    发明申请
    BaTiO3 - PbTiO3 SERIES SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC TYPE ACTUATOR AND LIQUID DISCHARGE HEAD USING SUCH PIEZOELECTRIC TYPE ACTUATOR 失效
    BaTiO3-PbTiO3系列单晶及其制造方法，压电类型致动器和使用这种压电类型致动器的液体放电头

    公开(公告)号：US20080227623A1

    公开(公告)日：2008-09-18

    申请号：US12124993

    申请日：2008-05-21

    Applicant: Hiroshi Aoto ,  Akira Unno ,  Tetsuro Fukui ,  Akio Ikesue

    Inventor： Hiroshi Aoto ,  Akira Unno ,  Tetsuro Fukui ,  Akio Ikesue

    IPC: C04B35/00

    CPC classification number: C04B35/4684 ,  C30B1/00 ,  C30B29/32 ,  H01L41/1871 ,  H01L41/39

    Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

    Abstract translation: 通过加热BaTiO 3 3 -Ti 3 O 3 3致密粉末构件将BaTiO 3 - 3Ti 3 O 3系单晶单晶化 或具有比含Ba摩尔数少的含Pb摩尔数的烧结体，同时保持粉末或物质处于非熔融状态。 以这种方式，这种单晶可以更快速地以晶体生长速度制造并且更稳定地制造，显着地有助于改善提供优异的BaTiO 3 -PbTiO 3 系列单晶，以及用于提供压电性能和生产率特别优异的铅含量比小的压电材料。

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