公开(公告)号：US07410355B2

公开(公告)日：2008-08-12

申请号：US11356697

申请日：2006-02-17

申请人： Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pages ,  Pascal G. Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

发明人： Ernst H. A. Granneman ,  Vladimir I. Kuznetsov ,  Xavier Pages ,  Pascal G. Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

IPC分类号： H01L21/02

CPC分类号： H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67784 ,  H01L21/6838

摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到​​所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

公开(公告)号：US06770851B2

公开(公告)日：2004-08-03

申请号：US10186269

申请日：2002-06-27

申请人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

发明人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  H01L21/6838

摘要： In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.

摘要翻译： 在用于诸如晶片的半导体衬底的热处理的方法和装置中，晶片被带入热处理设备，其中热处理设备包括平行于晶片的引入位置的两个基本上平的部分，晶片 第一部分被加热到第一高温，第二部分借助于冷却装置被冷却，并且处于低于70℃的第二温度。通过控制晶片和至少一个 的部分，晶片的温度可以受到这样的程度的影响，即在一定时间内，晶片的温度相对更接近第一高温，然后承受比较接近于 第二低温。