公开(公告)号：US06770851B2

公开(公告)日：2004-08-03

申请号：US10186269

申请日：2002-06-27

申请人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

发明人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  H01L21/6838

摘要： In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.

摘要翻译： 在用于诸如晶片的半导体衬底的热处理的方法和装置中，晶片被带入热处理设备，其中热处理设备包括平行于晶片的引入位置的两个基本上平的部分，晶片 第一部分被加热到第一高温，第二部分借助于冷却装置被冷却，并且处于低于70℃的第二温度。通过控制晶片和至少一个 的部分，晶片的温度可以受到这样的程度的影响，即在一定时间内，晶片的温度相对更接近第一高温，然后承受比较接近于 第二低温。

公开(公告)号：US06884317B2

公开(公告)日：2005-04-26

申请号：US09771673

申请日：2001-01-29

申请人： Hessel Sprey ,  Arjen Benjamin Storm ,  Jan Willem Hubert Maes

发明人： Hessel Sprey ,  Arjen Benjamin Storm ,  Jan Willem Hubert Maes

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/311 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/67069 ,  H01L21/31116

摘要： Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.

摘要翻译： 蚀刻基板的方法，其中在放置在蚀刻室中后，用HF和乙酸的混合物处理所述基板。 首先将乙酸引入室内，然后加入氟化氢。 通过氟化氢储存在辅助室中的中间阶段引入氟化氢。 通过这种方式，防止由氟化氢和乙酸组成的腐蚀性混合物回流到氟化氢的管道组件中，因此有关管道组件的使用寿命明显延长，并且防止后处理的基板上的金属污染。