公开(公告)号：US06770851B2

公开(公告)日：2004-08-03

申请号：US10186269

申请日：2002-06-27

申请人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

发明人： Ernst Hendrik August Granneman ,  Vladimir Ivanovich Kuznetsov ,  Arjen Benjamin Storm ,  Herbert Terhorst

IPC分类号： F27B514

CPC分类号： H01L21/67109 ,  H01L21/6838

摘要： In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.

摘要翻译： 在用于诸如晶片的半导体衬底的热处理的方法和装置中，晶片被带入热处理设备，其中热处理设备包括平行于晶片的引入位置的两个基本上平的部分，晶片 第一部分被加热到第一高温，第二部分借助于冷却装置被冷却，并且处于低于70℃的第二温度。通过控制晶片和至少一个 的部分，晶片的温度可以受到这样的程度的影响，即在一定时间内，晶片的温度相对更接近第一高温，然后承受比较接近于 第二低温。

公开(公告)号：US06551404B2

公开(公告)日：2003-04-22

申请号：US09747275

申请日：2000-12-22

申请人： Gert-Jan Snijders ,  Vladimir Ivanovich Kuznetsov ,  Christianus Gerardus M. de Ridder ,  Herbert Terhorst

发明人： Gert-Jan Snijders ,  Vladimir Ivanovich Kuznetsov ,  Christianus Gerardus M. de Ridder ,  Herbert Terhorst

IPC分类号： H01L2120

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/6838

摘要： An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away front and towards each other, the two housing parts bounding a treatment chamber, while around the treatment chamber there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces there is provided a second groove connected to gas feed means, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface.

摘要翻译： 一种用于处理由半导体材料制成的晶片的设备，所述设备包括布置成彼此远离并朝向彼此移动的第一和第二壳体部分，所述两个壳体部分包围处理室，而在处理室周围设置有第一 沟槽连接到气体排出装置，而在两个边界表面中的至少一个中设置有连接到气体供给装置的第二凹槽，第一凹槽径向位于第二凹槽内，并且在使用中由 气体供给装置使得从第二凹槽，气体在第一和第二边界表面之间的间隙中径向向内和径向向外的方向流动。

公开(公告)号：US08215264B2

公开(公告)日：2012-07-10

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US07976898B2

公开(公告)日：2011-07-12

申请号：US11857294

申请日：2007-09-18

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US20100307415A1

公开(公告)日：2010-12-09

申请号：US12754223

申请日：2010-04-05

申请人： Eric Shero ,  Mohith E. Verghese ,  Carl L. White ,  Herbert Terhorst ,  Dan Maurice

发明人： Eric Shero ,  Mohith E. Verghese ,  Carl L. White ,  Herbert Terhorst ,  Dan Maurice

IPC分类号： H01L21/46 ,  C23C16/00

CPC分类号： C23C16/45502 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45591 ,  H01L21/0228 ,  Y10T137/85938

摘要： A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

摘要翻译： 一种具有壳体的反应器，其包围可操作地连接到反应室和排气组件的气体输送系统。 气体输送系统包括用于向反应室提供至少一种处理气体的多条气体管线。 气体输送系统还包括用于接收至少一种处理气体的混合器。 混合器可操作地连接到被配置成扩散工艺气体的扩散器。 扩散器直接附接到反应室的上表面，从而在它们之间形成扩散体。 扩散器包括至少一个分配表面，该分配表面被配置为当工艺气体在被引入反应室之前通过扩散器体积时向流化气体提供流量限制。 反应室限定反应空间，其中半导体衬底被设置用于处理。 排气组件可操作地连接到反应室，用于从反应空间抽出未反应的工艺气体和流出物。

公开(公告)号：US20050170306A1

公开(公告)日：2005-08-04

申请号：US11038357

申请日：2005-01-18

申请人： Theodorus Maria Oosterlaken ,  Frank Huussen ,  Herbert Terhorst ,  Jack Van Putten

发明人： Theodorus Maria Oosterlaken ,  Frank Huussen ,  Herbert Terhorst ,  Jack Van Putten

IPC分类号： H01L21/31 ,  B08B5/00 ,  B08B7/00 ,  G01M3/04 ,  H01L21/00

CPC分类号： H01L21/67126

摘要： A semiconductor processing reactor comprises a reaction chamber with a gas exhaust and a mechanical seal at one end of the chamber. The seal seals off the chamber from the ambient environment and is purged with gas to prevent diffusion of ambient gases into the reaction chamber. Because the purge gas can diffuse through the seal into the reaction chamber, the purge gas is chosen based upon the process gas and the location of the seal and exhaust so that the molecular weight of the purge gas causes the purge gas, by the force of gravity or buoyancy, to remain in the portion of the reaction chamber containing the seal and the gas exhaust. Advantageously, keeping the purge gas at the same end of the chamber as the gas exhaust minimizes dilution of the process gas with the purge gas, thereby preventing the purge gas from detrimentally effecting process results.

摘要翻译： 半导体处理反应器包括在室的一端具有排气和机械密封的反应室。 密封件将室从周围环境密封并用气体吹扫，以防止环境气体扩散进入反应室。 因为吹扫气体可以通过密封件扩散到反应室中，所以基于处理气体和密封件和排气的位置来选择吹扫气体，使得吹扫气体的分子量由吹扫气体的分力引起， 重力或浮力，保留在包含密封件和排气的反应室的部分。 有利地，将吹扫气体保持在与气体排出物相同的端部处，使得处理气体与吹扫气体的稀释最小化，从而防止吹扫气体不利地影响过程结果。

公开(公告)号：US20110308460A1

公开(公告)日：2011-12-22

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/455 ,  C23C16/509 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US20100116207A1

公开(公告)日：2010-05-13

申请号：US12613436

申请日：2009-11-05

申请人： Michael Givens ,  Matthew Goodman ,  Mark Hawkins ,  Brad Halleck ,  Herbert Terhorst

发明人： Michael Givens ,  Matthew Goodman ,  Mark Hawkins ,  Brad Halleck ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： H01L21/6719 ,  C23C16/45504 ,  C23C16/45589 ,  C23C16/45591

摘要： A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile.

摘要翻译： 反应室具有限定在其中的反应间隔，其中反应空间是可调的，以产生通过反应空间的基本上稳定和层流的气体。 基本上稳定的层流构造成改善在反应室内正在处理的衬底上的沉积的均匀性，以提供可预测的沉积轮廓。

公开(公告)号：US20060266289A1

公开(公告)日：2006-11-30

申请号：US11333127

申请日：2006-01-17

申请人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

发明人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

IPC分类号： C23C16/00

CPC分类号： H01L21/68785 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C30B35/00 ,  H01L21/67236 ,  H01L21/68714 ,  H01L21/68742

摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

摘要翻译： 原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。

公开(公告)号：US06759325B2

公开(公告)日：2004-07-06

申请号：US10303293

申请日：2002-11-22

申请人： Ivo Raaijmakers ,  Pekka T. Soininen ,  Ernst Granneman ,  Suvi Haukka ,  Kai-Erik Elers ,  Marko Tuominen ,  Hessel Sprey ,  Herbert Terhorst ,  Menso Hendriks

发明人： Ivo Raaijmakers ,  Pekka T. Soininen ,  Ernst Granneman ,  Suvi Haukka ,  Kai-Erik Elers ,  Marko Tuominen ,  Hessel Sprey ,  Herbert Terhorst ,  Menso Hendriks

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then the structure is exposed to alternating chemistries to form monolayers of a desired lining material. In exemplary process flows chemical or physical vapor deposition (CVD or PVD) of a sealing layer blocks the pores due to imperfect conformality. An alternating process can also be arranged by selection of pulse separation and/or pulse duration to achieve reduced conformality relative to a self-saturating, self-limiting atomic layer deposition (ALD) process. In still another arrangement, layers with anisotropic pore structures can be sealed by selectively melting upper surfaces. Blocking is followed by a self-limiting, self-saturating atomic layer deposition (ALD) reactions without significantly filling the pores.

摘要翻译： 提供了用于集成电路中的双镶嵌结构的保形衬里的方法和结构，特别是在多孔材料中形成的开口。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔的侧壁上的孔堵塞，然后将结构暴露于交替的化学物质以形成所需衬里材料的单层。 在示例性工艺流程中，密封层的化学或物理气相沉积（CVD或PVD）由于不完美的共形性而堵塞孔。 也可以通过选择脉冲分离和/或脉冲持续时间来布置交替过程，以相对于自饱和的自限制性原子层沉积（ALD）工艺实现降低的共形。 在另一种布置中，可以通过选择性地熔化上表面来密封具有各向异性孔结构的层。 之后是自限制的，自饱和的原子层沉积（ALD）反应而没有显着填充孔隙。