摘要:
A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
摘要:
A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
摘要:
The transparent conductive film of the present invention is a transparent conductive film, comprising a transparent film substrate, and a first transparent dielectric layer, a second transparent dielectric layer and a transparent conductive layer that are formed on one or both sides of the transparent film substrate in this order from the transparent film substrate side, wherein the transparent conductive layer is patterned, the relation n2
摘要:
There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.
摘要:
A transparent conductive laminate includes: a first transparent dielectric thin film; a second transparent dielectric thin film; a transparent conductive thin film; a transparent film substrate having a thickness of 2 μm to 200 μm, and the first transparent dielectric thin film, the second transparent dielectric thin film, and the transparent conductive thin film formed on one side of the substrate in this order; a transparent pressure-sensitive adhesive layer; and a transparent base substrate bonded to another side of the transparent film substrate with a transparent pressure-sensitive adhesive layer interposed therebetween, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 100 parts by weight of indium oxide, 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide, a refractive index n1 of the first transparent dielectric thin film, a refractive index n2 of the second transparent dielectric thin film, and a refractive index n3 of the transparent conductive thin film satisfy a relationship: n2
摘要:
There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.
摘要:
A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.
摘要:
The transparent conductive film of the present invention is a transparent conductive film, comprising a transparent film substrate, and a first transparent dielectric layer, a second transparent dielectric layer and a transparent conductive layer that are formed on one or both sides of the transparent film substrate in this order from the transparent film substrate side, wherein the transparent conductive layer is patterned, the relation n2
摘要:
A transparent conductive film includes: a transparent film substrate; a transparent conductor layer provided on one or both sides of the transparent film substrate; and at least one undercoat layer interposed between the transparent film substrate and the transparent conductor layer; wherein: the transparent conductor layer is patterned; and a non-patterned portion not having the transparent conductor layer has the at least one undercoat layer.
摘要:
An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The temperature inside the furnace in the crystallization step is preferably 170 to 220° C. The change rate of the film length in the crystallization step is preferably +2.5% or less.