Transparent conductive laminated body
    21.
    发明授权
    Transparent conductive laminated body 有权
    透明导电层压体

    公开(公告)号:US07968185B1

    公开(公告)日:2011-06-28

    申请号:US13032305

    申请日:2011-02-22

    摘要: A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2

    摘要翻译: 1.一种透明导电性层叠体,其特征在于,具有:厚度为2〜200μm的透明膜基板,以及形成在所述基板的一侧的第一透明电介质薄膜,第二透明电介质薄膜和透明导电性薄膜 从衬底的该顺序开始,其中通过真空沉积,溅射或离子电镀形成第一透明电介质薄膜,并且包括含有0至20重量份氧化锡和10至40重量份铈的复合氧化物 氧化物相对于100重量份的氧化铟,并且满足关系:n2

    TRANSPARENT CONDUCTIVE LAMINATED BODY
    22.
    发明申请
    TRANSPARENT CONDUCTIVE LAMINATED BODY 有权
    透明导电层压体

    公开(公告)号:US20110141065A1

    公开(公告)日:2011-06-16

    申请号:US13032305

    申请日:2011-02-22

    IPC分类号: G06F3/042

    摘要: A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2

    摘要翻译: 1.一种透明导电性层叠体,其特征在于,具有:厚度为2〜200μm的透明膜基板,以及形成在所述基板的一侧的第一透明电介质薄膜,第二透明电介质薄膜和透明导电性薄膜 从衬底的该顺序开始,其中通过真空沉积,溅射或离子电镀形成第一透明电介质薄膜,并且包括含有0至20重量份氧化锡和10至40重量份铈的复合氧化物 氧化物相对于100重量份的氧化铟,并且满足关系:n2

    TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCTION THEREOF AND TOUCH PANEL THEREWITH
    24.
    发明申请
    TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCTION THEREOF AND TOUCH PANEL THEREWITH 有权
    透明导电膜,其制造方法及触控面板

    公开(公告)号:US20090104440A1

    公开(公告)日:2009-04-23

    申请号:US12250645

    申请日:2008-10-14

    IPC分类号: B32B7/12 C23C14/34

    摘要: There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.

    摘要翻译: 提供了具有透明导体层的透明导电膜,其具有高水平的笔输入耐久性和高温,高湿度的可靠性。 本发明的透明导电膜是透明导电膜,包括:透明膜基板; 透明导体层,其设置在透明膜基板的一面上,具有15nm至35nm的厚度d和0.37nm至1nm的平均表面粗糙度Ra; 以及插入在透明膜基板和透明导体层之间的至少一层底涂层。

    TRANSPARENT CONDUCTIVE LAMINATE AND TOUCH PANEL
    25.
    发明申请
    TRANSPARENT CONDUCTIVE LAMINATE AND TOUCH PANEL 审中-公开
    透明导电层压板和触控面板

    公开(公告)号:US20080152879A1

    公开(公告)日:2008-06-26

    申请号:US11951011

    申请日:2007-12-05

    IPC分类号: B32B7/02

    CPC分类号: C23C14/08 Y10T428/24942

    摘要: A transparent conductive laminate includes: a first transparent dielectric thin film; a second transparent dielectric thin film; a transparent conductive thin film; a transparent film substrate having a thickness of 2 μm to 200 μm, and the first transparent dielectric thin film, the second transparent dielectric thin film, and the transparent conductive thin film formed on one side of the substrate in this order; a transparent pressure-sensitive adhesive layer; and a transparent base substrate bonded to another side of the transparent film substrate with a transparent pressure-sensitive adhesive layer interposed therebetween, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 100 parts by weight of indium oxide, 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide, a refractive index n1 of the first transparent dielectric thin film, a refractive index n2 of the second transparent dielectric thin film, and a refractive index n3 of the transparent conductive thin film satisfy a relationship: n2

    摘要翻译: 透明导电层压体包括:第一透明电介质薄膜; 第二透明介电薄膜; 透明导电薄膜; 厚度为2μm〜200μm的透明膜基板,以及依次形成在基板一侧的第一透明电介质薄膜,第二透明电介质薄膜和透明导电薄膜; 透明压敏粘合剂层; 以及透明基材,其中透明粘合剂层与所​​述透明膜基材的另一侧粘合,其中所述第一透明电介质薄膜通过真空沉积,溅射或离子镀形成,并且包含含有100份 的氧化铟,0〜20重量份的氧化锡和10〜40重量份的氧化铈,第一透明电介质薄膜的折射率n 1,第二透明电介质薄膜的折射率n 2 膜和透明导电性薄膜的折射率n 3满足关系:n 2

    Transparent conductive film, method for production thereof and touch panel therewith
    26.
    发明授权
    Transparent conductive film, method for production thereof and touch panel therewith 有权
    透明导电膜,其制造方法和触摸屏

    公开(公告)号:US09428625B2

    公开(公告)日:2016-08-30

    申请号:US12250645

    申请日:2008-10-14

    摘要: There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.

    摘要翻译: 提供了具有透明导体层的透明导电膜,其具有高水平的笔输入耐久性和高温,高湿度的可靠性。 本发明的透明导电膜是透明导电膜,包括:透明膜基板; 透明导体层,其设置在透明膜基板的一面上,具有15nm至35nm的厚度d和0.37nm至1nm的平均表面粗糙度Ra; 以及插入在透明膜基板和透明导体层之间的至少一层底涂层。

    Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel
    27.
    发明授权
    Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel 有权
    透明结晶导电薄膜,其制造方法,透明导电膜和触摸面板

    公开(公告)号:US09260777B2

    公开(公告)日:2016-02-16

    申请号:US11917110

    申请日:2006-12-27

    IPC分类号: C23C16/00 C23C14/08

    CPC分类号: C23C14/086

    摘要: A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.

    摘要翻译: 本发明的透明结晶性导电性薄膜,以铟锡氧化物为主要成分,其中,所述氧化铟锡含有氧化铟和氧化锡总量的9重量%以下,其中, 透明结晶性导电性薄膜含有0.45原子%以下的氮。 本发明的透明结晶性导电性薄膜在高温高湿环境下具有高电阻值和良好的可靠性。

    TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR
    30.
    发明申请
    TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR 审中-公开
    透明导电薄膜及其制造方法

    公开(公告)号:US20130149555A1

    公开(公告)日:2013-06-13

    申请号:US13808487

    申请日:2011-07-06

    IPC分类号: H01B5/14

    摘要: An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The temperature inside the furnace in the crystallization step is preferably 170 to 220° C. The change rate of the film length in the crystallization step is preferably +2.5% or less.

    摘要翻译: 本发明的目的在于制造在透明膜基板上形成的透明膜基板和结晶铟复合氧化物膜的长透明导电膜。 本发明的制造方法包括:通过溅射法在长透明膜基板上形成含有铟和四价金属的铟复合氧化物的非晶质膜的无定形层叠体形成工序,以及连续供给长透明性的结晶工序 将其上形成无定形薄膜的薄膜基片放入炉中并使无定形薄膜结晶。 结晶步骤中的炉内的温度优选为170〜220℃。结晶步骤中的膜长度的变化率优选为+ 2.5%以下。