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公开(公告)号：US07914883B2
公开(公告)日：2011-03-29
申请号：US11448660
申请日：2006-06-08
CPC分类号： G06F3/041 , H03K17/962 , H03K17/9625 , Y10T428/26 , Y10T428/31504
摘要： A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
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公开(公告)号：US20060290409A1
公开(公告)日：2006-12-28
申请号：US11448660
申请日：2006-06-08
IPC分类号： H03K17/96
CPC分类号： G06F3/041 , H03K17/962 , H03K17/9625 , Y10T428/26 , Y10T428/31504
摘要： A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
摘要翻译： 一种透明导电性层叠体，其特征在于，具有：厚度为2〜200μm的透明膜基板，以及形成在所述基板的一侧上的第一透明电介质薄膜，第二透明电介质薄膜和透明导电性薄膜 从衬底的该顺序开始，其中通过真空沉积，溅射或离子电镀形成第一透明电介质薄膜，并且包括含有0至20重量份氧化锡和10至40重量份铈的复合氧化物 氧化物相对于100重量份的氧化铟，并且满足n 2
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公开(公告)号：US07968185B1
公开(公告)日：2011-06-28
申请号：US13032305
申请日：2011-02-22
IPC分类号： G06F3/041 , G11B11/105 , B32B9/04 , B32B9/00 , B32B19/00
CPC分类号： G06F3/041 , H03K17/962 , H03K17/9625 , Y10T428/26 , Y10T428/31504
摘要： A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
摘要翻译： 1.一种透明导电性层叠体，其特征在于，具有：厚度为2〜200μm的透明膜基板，以及形成在所述基板的一侧的第一透明电介质薄膜，第二透明电介质薄膜和透明导电性薄膜 从衬底的该顺序开始，其中通过真空沉积，溅射或离子电镀形成第一透明电介质薄膜，并且包括含有0至20重量份氧化锡和10至40重量份铈的复合氧化物 氧化物相对于100重量份的氧化铟，并且满足关系：n2
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公开(公告)号：US20110141065A1
公开(公告)日：2011-06-16
申请号：US13032305
申请日：2011-02-22
IPC分类号： G06F3/042
CPC分类号： G06F3/041 , H03K17/962 , H03K17/9625 , Y10T428/26 , Y10T428/31504
摘要： A transparent conductive laminated body comprising: a transparent film substrate having a thickness of 2 to 200 μm, and a first transparent dielectric thin film, a second transparent dielectric thin film and a transparent conductive thin film that are formed on one side of the substrate in this order from the side of the substrate, wherein the first transparent dielectric thin film is formed by vacuum deposition, sputtering or ion plating and comprises a complex oxide containing 0 to 20 parts by weight of tin oxide and 10 to 40 parts by weight of cerium oxide relative to 100 parts by weight of indium oxide, and the relationship: n2
摘要翻译： 1.一种透明导电性层叠体，其特征在于，具有：厚度为2〜200μm的透明膜基板，以及形成在所述基板的一侧的第一透明电介质薄膜，第二透明电介质薄膜和透明导电性薄膜 从衬底的该顺序开始，其中通过真空沉积，溅射或离子电镀形成第一透明电介质薄膜，并且包括含有0至20重量份氧化锡和10至40重量份铈的复合氧化物 氧化物相对于100重量份的氧化铟，并且满足关系：n2
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5.发明授权公开(公告)号：US09260777B2
公开(公告)日：2016-02-16
申请号：US11917110
申请日：2006-12-27
CPC分类号： C23C14/086
摘要： A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.
摘要翻译： 本发明的透明结晶性导电性薄膜，以铟锡氧化物为主要成分，其中，所述氧化铟锡含有氧化铟和氧化锡总量的9重量％以下，其中， 透明结晶性导电性薄膜含有0.45原子％以下的氮。 本发明的透明结晶性导电性薄膜在高温高湿环境下具有高电阻值和良好的可靠性。
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6.发明申请公开(公告)号：US20090117405A1
公开(公告)日：2009-05-07
申请号：US11917110
申请日：2006-12-27
CPC分类号： C23C14/086
摘要： A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.
摘要翻译： 本发明的透明结晶性导电性薄膜，以铟锡氧化物为主要成分，其中，所述氧化铟锡含有氧化铟和氧化锡总量的9重量％以下，其中， 透明结晶性导电性薄膜含有0.45原子％以下的氮。 本发明的透明结晶性导电性薄膜在高温高湿环境下具有高电阻值和良好的可靠性。
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公开(公告)号：US09206505B2
公开(公告)日：2015-12-08
申请号：US13458692
申请日：2012-04-27
申请人： Tomotake Nashiki , Hideo Sugawara , Tomonori Noguchi , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
发明人： Tomotake Nashiki , Hideo Sugawara , Tomonori Noguchi , Akira Hamada , Yoshihisa Ito , Kuniaki Ishibashi
CPC分类号： C23C14/568 , C23C14/086 , C23C14/562 , C23C28/32 , C23C28/321 , C23C28/345 , H01L21/67132 , H01L21/67173 , Y10T428/31678
摘要： A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
摘要翻译： 公开了一种连续使细长衬底经受真空成膜的方法。 该方法包括以下步骤：将来自第一辊室的第一衬底从第一室向第二辊室供给; 对第一衬底进行脱气; 在第二成膜室中在第一基板上形成第二材料的膜; 并卷起第二辊室中的第一基板，从而制造第一基板，并且还包括类似的步骤以产生第二基板。 在利用第二材料膜制造第一基板之前，第一成膜室的第一阴极电极从第一成膜室除去，并且在用第一材料膜制造第二基板之前，第二阴极 从第二成膜室除去第二成膜室的电极。
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公开(公告)号：US20050045471A1
公开(公告)日：2005-03-03
申请号：US10925930
申请日：2004-08-26
IPC分类号： G02F1/1333 , B32B15/08 , B32B17/10 , C23C14/00 , C23C14/08 , C23C14/32 , C23C14/34 , C23C14/58 , G02F1/13 , H05K1/03 , H05K3/00
CPC分类号： C23C14/086 , C23C14/0042 , C23C14/5806
摘要： A process for producing a transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding is provided. The transparent conductive layer is excellent in transparency and wet heat confidence, is not excessively low in specific resistivity, and has no variation on optical properties such as retardation characteristic. The transparent conductive laminate is obtained by sputter-film forming a transparent conductive layer on a substrate comprising an organic polymer molding under conditions of a substrate temperature of 80-150° C. and a degree of vacuum of 8×10−3 Pa or lower to form an amorphous transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1-6 % by weight based on the total weight of In atom and Sn atom and having a film thickness of 15-30 nm, a Hall mobility of 15-28 cm2 V·S, and a carrier density of 2×1020/cm3 to 5×1020/cm3, and heat treating the layer at a temperature lower than 120° C., to convert it into a completely crystallized transparent conductive layer having a Hall mobility of 30-45 cm2/V·S and a carrier density of 2×1020/cm3 to 7×1020/cm3.
摘要翻译： 提供了一种制造在包含有机聚合物成型体的基板上具有完全结晶的透明导电层的透明导电层压体的方法。 透明导电层的透明性和湿热置信度优异，电阻率不低，对延迟特性等光学特性没有变化。 在基板温度为80-150℃，真空度为8×10 -3 Pa以下的条件下，在包含有机聚合物成型体的基板上溅射成膜，形成透明导电性层叠体 形成非晶透明导电层，其包含相对于In原子和Sn原子的总重量为15〜30nm的Sn原子量为1-6重量％的In.Sn复合氧化物， 霍尔迁移率为15-28cm 2，载体密度为2×10 20 / cm 3至5×10 20 / cm 3，并在低于120℃的温度下对该层进行热处理 将其转化为具有30-45cm 2 / Vs的霍尔迁移率和2×10 20 / cm 3至7×10 20 / cm 3的载流子密度的完全结晶的透明导电层 。
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公开(公告)号：US07763151B2
公开(公告)日：2010-07-27
申请号：US10925930
申请日：2004-08-26
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C23C14/0042 , C23C14/5806
摘要： A process for producing a transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding is provided. The transparent conductive layer is excellent in transparency and wet heat confidence, is not excessively low in specific resistivity, and has no variation on optical properties such as retardation characteristic. The transparent conductive laminate is obtained by sputter-film forming a transparent conductive layer on a substrate comprising an organic polymer molding under conditions of a substrate temperature of 80-150° C. and a degree of vacuum of 8×10−3 Pa or lower to form an amorphous transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1-6 % by weight based on the total weight of In atom and Sn atom and having a film thickness of 15-30 nm, a Hall mobility of 15-28 cm2 V·S, and a carrier density of 2×1020/cm3 to 5×1020/cm3, and heat treating the layer at a temperature lower than 120° C., to convert it into a completely crystallized transparent conductive layer having a Hall mobility of 30-45 cm2/V·S and a carrier density of 2×1020/cm3 to 7×1020/cm3.
摘要翻译： 提供了一种制造在包含有机聚合物成型体的基板上具有完全结晶的透明导电层的透明导电层压体的方法。 透明导电层的透明性和湿热置信度优异，电阻率不低，对延迟特性等光学特性没有变化。 在基板温度为80-150℃，真空度为8×10 -3 Pa以下的条件下，在包含有机聚合物成型体的基板上溅射成膜，形成透明导电性层叠体 形成非晶透明导电层，其包含相对于In原子和Sn原子的总重量为15〜30nm的Sn原子量为1-6重量％的In.Sn复合氧化物， 霍尔迁移率为15-28 cm2 V·S，载流子密度为2×1020 / cm3至5×1020 / cm3，并在低于120℃的温度下对该层进行热处理，将其转化为完全结晶 透明导电层的霍尔迁移率为30-45cm2 / V·S，载流子密度为2×1020 / cm3〜7×1020 / cm3。
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公开(公告)号：US08580088B2
公开(公告)日：2013-11-12
申请号：US13280758
申请日：2011-10-25
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C23C14/5806 , G06F3/044 , G06F3/045 , G06F2203/04103
摘要： A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.
摘要翻译： 一种透明导电膜的制造方法，所述透明导电膜包括透明膜基板和结晶透明导电层，其包括：在所述透明膜基板上首先沉积具有第一四价金属元素氧化物的第一铟基复合氧化物; 以及第二沉积铟氧化物或第二铟基复合氧化物，并且低于用于首先通过溅射沉积形成非晶透明导电层的铟基复合氧化物的四价金属元素氧化物含量，并且使无定形透明 导电层。 该方法允许降低结晶时间。
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