公开(公告)号：US08951849B2

公开(公告)日：2015-02-10

申请号：US13050002

申请日：2011-03-17

申请人： Toru Takayama ,  Kengo Akimoto

发明人： Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L35/24 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417

CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/32055 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

摘要翻译： 目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。 在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量 。 微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

公开(公告)号：US07492012B2

公开(公告)日：2009-02-17

申请号：US11276651

申请日：2006-03-09

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L23/62

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

摘要翻译： 提供了一种发光器件，其具有用于防止由TFT和发光元件之间形成的层间绝缘膜中包含的水和氧引起的发光元件劣化的结构。 在基板上形成TFT，在TFT上由无机材料形成无机绝缘膜，作为第一绝缘膜，在有机绝缘膜上形成有机绝缘膜，作为第二绝缘膜 膜和无机绝缘膜由无机材料形成在第二绝缘膜上并用作第三绝缘膜。 由此获得的是用于防止第二绝缘膜释放水分和氧气的结构。 为了避免形成膜的缺陷，单独除去形成有接触孔的第三绝缘膜的一部分。 然后，在第三绝缘膜上形成由阳极，有机化合物层和阴极构成的发光元件。 本申请的发光器件中的TFT和发光元件通过形成在接触孔中的线彼此连接。

公开(公告)号：US20060148216A1

公开(公告)日：2006-07-06

申请号：US11295470

申请日：2005-12-07

申请人： Toru Takayama ,  Kengo Akimoto

发明人： Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L29/78666 ,  H01L29/78675

摘要： Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10×1020/cm3 or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.

公开(公告)号：US07033848B2

公开(公告)日：2006-04-25

申请号：US11060763

申请日：2005-02-18

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/00 ,  H01L21/461

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

公开(公告)号：US20050156172A1

公开(公告)日：2005-07-21

申请号：US11060763

申请日：2005-02-18

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H05B33/04 ,  G09F9/30 ,  H01L21/318 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H01L29/15

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

公开(公告)号：US09362307B2

公开(公告)日：2016-06-07

申请号：US13185931

申请日：2011-07-19

申请人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

发明人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

IPC分类号： H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.

摘要翻译： 本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题 由于玻璃的膨胀或收缩造成图案化。 本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和 将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。 由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

公开(公告)号：US20110165740A1

公开(公告)日：2011-07-07

申请号：US13050002

申请日：2011-03-17

申请人： Toru Takayama ,  Kengo Akimoto

发明人： Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/3105 ,  H01L21/31604 ,  H01L21/32055 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.

摘要翻译： 目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。 在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量 。 微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

公开(公告)号：US20060151789A1

公开(公告)日：2006-07-13

申请号：US11276651

申请日：2006-03-09

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

摘要翻译： 提供了一种发光器件，其具有用于防止由TFT和发光元件之间形成的层间绝缘膜中包含的水和氧引起的发光元件劣化的结构。 在基板上形成TFT，在TFT上由无机材料形成无机绝缘膜，作为第一绝缘膜，在有机绝缘膜上形成有机绝缘膜，作为第二绝缘膜 膜和无机绝缘膜由无机材料形成在第二绝缘膜上并用作第三绝缘膜。 由此获得的是用于防止第二绝缘膜释放水分和氧气的结构。 为了避免形成膜的缺陷，单独除去形成有接触孔的第三绝缘膜的一部分。 然后，在第三绝缘膜上形成由阳极，有机化合物层和阴极构成的发光元件。 本申请的发光器件中的TFT和发光元件通过形成在接触孔中的线彼此连接。

公开(公告)号：US08120111B2

公开(公告)日：2012-02-21

申请号：US12078738

申请日：2008-04-04

申请人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

发明人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

IPC分类号： H01L27/13

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.

摘要翻译： 本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题 由于玻璃的膨胀或收缩造成图案化。 本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和 将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。 由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

公开(公告)号：US20080191279A1

公开(公告)日：2008-08-14

申请号：US12078738

申请日：2008-04-04

申请人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

发明人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

IPC分类号： H01L29/739

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.