公开(公告)号：US5310699A

公开(公告)日：1994-05-10

申请号：US905683

申请日：1992-06-29

申请人： Yasunori Chikawa ,  Shigeyuki Sasaki ,  Katsunobu Mori ,  Takamichi Maeda ,  Masao Hayakawa

发明人： Yasunori Chikawa ,  Shigeyuki Sasaki ,  Katsunobu Mori ,  Takamichi Maeda ,  Masao Hayakawa

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L21/28 ,  H01L21/447 ,  H01L21/92

CPC分类号： H01L24/11 ,  H01L23/53242 ,  H01L23/53252 ,  H01L24/13 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941

摘要： A method of manufacturing a semiconductor device with a bump-electrode of gold crystal is disclosed. The method includes providing a semiconductor substrate, an insulative layer, an electrode section, passivation layer on the edge portion of the electrode section, a multi-layer film, and a bump electrode of gold crystal. The method further includes heat treatment of the bump electrode to form an anticorrosive layer between the electrode section and the lower layer of the multi-layer film. Removing the unnecessary multi-layer film, the anticorrosive layer is used as a mask for etching to simplify the process of manufacturing the semiconductor device.

摘要翻译： 公开了一种制造具有金晶体凸块电极的半导体器件的方法。 该方法包括在电极部分的边缘部分上提供半导体衬底，绝缘层，电极部分，钝化层，多层膜和金晶体的凸块电极。 该方法还包括对凸块电极进行热处理，以在多层膜的电极部分和下层之间形成防腐蚀层。 为了简化半导体器件的制造工序，除去不需要的多层膜，将防腐蚀层用作蚀刻掩模。

公开(公告)号：US5281848A

公开(公告)日：1994-01-25

申请号：US796431

申请日：1991-11-22

申请人： Yasunori Chikawa ,  Yoshiaki Honda ,  Katsunobu Mori ,  Naoyuki Tajima ,  Takaaki Tsuda ,  Takamichi Maeda

发明人： Yasunori Chikawa ,  Yoshiaki Honda ,  Katsunobu Mori ,  Naoyuki Tajima ,  Takaaki Tsuda ,  Takamichi Maeda

IPC分类号： H01L21/60 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28

CPC分类号： H01L21/56 ,  H01L23/293 ,  H01L23/3121 ,  H01L2924/0002 ,  Y10T29/49121

摘要： A tape carrier semiconductor device has a resin sealed area not much larger than the size of the semiconductor chip, e.g. substantially not exceeding 2 mm to the outside. A device hole is not larger than an area formed by extending the outer periphery of the semiconductor chip to the outside by 0.3 mm and an epoxy resin of 500-1200 ps in viscosity is used for sealing the chip.

摘要翻译： 带载半导体器件具有不比半导体芯片的尺寸大得多的树脂密封区域，例如， 基本上不超过2mm。 器件孔不大于通过将半导体芯片的外周向外延伸0.3mm而形成的区域，并且使用粘度为500-1200ps的环氧树脂来密封芯片。