公开(公告)号：US09672309B2

公开(公告)日：2017-06-06

申请号：US14696498

申请日：2015-04-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Harn-Jiunn Wang ,  Teng-Yao Chang ,  Chin-Lung Lin ,  Chih-Hsien Tang ,  Yao-Jen Fan

IPC: G06F17/50 ,  H01L29/66

CPC classification number: G06F17/5068 ,  H01L29/66795 ,  H01L29/6681

Abstract: A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

公开(公告)号：US09563738B2

公开(公告)日：2017-02-07

申请号：US14690481

申请日：2015-04-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hung Chen ,  Chin-Lung Lin ,  Kuan-Wen Fang ,  Po-Ching Su ,  Hung-Wei Lin ,  Sheng-Lung Teng ,  Lun-Wen Yeh

IPC: G06F17/50 ,  G03F1/36 ,  H01L21/768

CPC classification number: G06F17/5081 ,  G03F1/36 ,  H01L21/76807

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract translation: 提供光学邻近校正（OPC）过程。 该方法包括接收对应于半导体结构的第一结构的第一图案，以及对应于所述半导体结构的第二结构的第二图案。 接下来，对第一图案执行第一OPC处理以获得修改的第一图案，其中修改的第一图案具有关于第一图案的第一移位。 对第二图案执行第二OPC处理以获得修订的第二图案，其中第二OPC处理包括根据第一移位移动第二图案。

公开(公告)号：US20160275226A1

公开(公告)日：2016-09-22

申请号：US14696498

申请日：2015-04-27

Applicant: United Microelectronics Corp.

Inventor： Harn-Jiunn Wang ,  Teng-Yao Chang ,  Chin-Lung Lin ,  Chih-Hsien Tang ,  Yao-Jen Fan

IPC: G06F17/50

CPC classification number: G06F17/5068 ,  H01L29/66795 ,  H01L29/6681

Abstract: A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

Abstract translation: 用于生成布局图案的方法包括以下步骤。 提供了包括第一群集区域中的多个第一条纹图案的基本布局图案。 每个第一条纹图案沿第一方向延伸，并且第一条纹图案在第二方向上具有相等的间距。 产生多个锚杆图案。 每个锚杆图案沿第一方向延伸，并且锚杆图案在第二方向上具有相等的间距。 第二方向上的至少一个锚杆图案的边缘分别与两个相邻的第一条纹图案的边缘对齐。 锚杆图案中的至少一个与两个相邻的第一条纹图案之间的第一空间重叠。 在由锚杆图案重叠的第一空间处产生至少一个第一心轴图案，并且将第一心轴图案输出到光掩模。