公开(公告)号：US20170271402A1

公开(公告)日：2017-09-21

申请号：US15075215

申请日：2016-03-21

Applicant: Winbond Electronics Corp.

Inventor： Frederick Chen ,  Chia-Hua Ho

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/249 ,  H01L27/2436 ,  H01L27/2454 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/1616

Abstract: Provided is a three-dimensional resistive memory including a channel pillar, a first gate pillar, a first gate dielectric layer, first and second stacked structures, a variable resistance pillar and an electrode pillar. The channel pillar is on a substrate. The first gate pillar is on the substrate and at a first side of the channel pillar. The first gate dielectric layer is between the channel pillar and the first gate pillar. The first and second stacked structures are on the substrate and respectively at opposite second and third sides of the channel pillar. Each of the first and second stacked structures includes conductive material layers and insulating material layers alternately stacked. The variable resistance pillar is on the substrate and at a side of the first stacked structure opposite to the channel pillar. The electrode pillar is on the substrate and inside of the variable resistance pillar.

公开(公告)号：US20160055906A1

公开(公告)日：2016-02-25

申请号：US14463625

申请日：2014-08-19

Applicant: Winbond Electronics Corp.

Inventor： Chia-Hua Ho ,  Shao-Ching Liao ,  Ping-Kun Wang ,  Meng-Hung Lin

IPC: G11C13/00

Abstract: An operation method of a resistive random access memory (RRAM) cell is provided, wherein the RRAM cell includes a variable impedance element and a switch element connected in series. The operation method includes the following steps. When the switch element is turned-on, a writing signal is provided to the variable impedance element to set an impedance of the variable impedance element. In a first period, the writing signal is set to a first writing voltage level to transmit a first electrical energy to the variable impedance element. In a second period, a second electrical energy is transmitted to the variable impedance element by the writing signal. The second period is subsequent to the first period, the first electrical energy and the second electrical energy are greater than zero, and the second electrical energy is smaller than the first electrical energy.

Abstract translation: 提供了一种电阻随机存取存储器（RRAM）单元的操作方法，其中RRAM单元包括串联连接的可变阻抗元件和开关元件。 操作方法包括以下步骤。 当开关元件导通时，向可变阻抗元件提供写入信号以设置可变阻抗元件的阻抗。 在第一时段中，将写入信号设置为第一写入电压电平以向可变阻抗元件发送第一电能。 在第二时段中，通过写入信号将第二电能传输到可变阻抗元件。 第二时期是在第一时段之后，第一电能和第二电能大于零，第二电能小于第一电能。