公开(公告)号：US20200241957A1

公开(公告)日：2020-07-30

申请号：US16260058

申请日：2019-01-28

申请人： Winbond Electronics Corp.

发明人： Chuen-Der Lien ,  Ming-Huei Shieh ,  Chi-Shun Lin ,  Seow Fong Lim ,  Ngatik Cheung

IPC分类号： G06F11/10

摘要： The invention provides a memory apparatus including a memory cell array and a hierarchical error correction code (ECC) layer. The hierarchical ECC layer, includes N layers of ECC coder-decoder, wherein the hierarchical ECC layer enables one of the N layers to operate an encoding or decoding operation on processed data, and the hierarchical ECC layer enables another one of the N layers merely when the error bit number of the processed data reaches to N−1 pre-set error correction number(s), and N is a positive integer larger than 1.

公开(公告)号：US20190391874A1

公开(公告)日：2019-12-26

申请号：US16455769

申请日：2019-06-28

申请人： Winbond Electronics Corp.

发明人： Chuen-Der Lien ,  Ming-Huei Shieh ,  Seow-Fong Lim ,  Ngatik Cheung ,  Chi-Shun Lin

IPC分类号： G06F11/10 ,  G06F3/06

摘要： The disclosure is directed to a memory storage apparatus having a dynamic data repair mechanism. The memory storage apparatus includes a connection interface; a memory array; and a memory control circuit configured at least to: receive, from the connection interface, a write command which includes a user data and an address of the user data; encode the user data as a codeword which includes the user data and parity bits; write the codeword, in a first memory location of the memory array, as a written codeword; perform a read procedure of the written codeword to determine whether the written codeword is erroneously written; and store a redundant codeword of the user data in a second memory location in response to having determined that the written codeword is erroneously written.

公开(公告)号：US20190294497A1

公开(公告)日：2019-09-26

申请号：US16034365

申请日：2018-07-13

申请人： Winbond Electronics Corp.

发明人： Chuen-Der Lien ,  Ming-Huei Shieh ,  Chi-Shun Lin ,  Ngatik Cheung ,  Seow Fong Lim

IPC分类号： G06F11/10 ,  G11C11/56

摘要： The disclosure is directed to a method and an apparatus for implementing an error correcting code (ECC) used by a memory storage apparatus. In an aspect of the disclosure, the method would include not limited to: receiving a write command having a write address and a write data; reading an existing codeword comprising a predetermined bit sequence; encoding the write data into a new codeword based on a default ECC; flipping at least one bit of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; writing the new codeword, wherein in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC.

公开(公告)号：US20190065307A1

公开(公告)日：2019-02-28

申请号：US15688865

申请日：2017-08-29

申请人： Winbond Electronics Corp.

发明人： Chuen-Der Lien ,  Ming-Huei Shieh ,  Seow-Fong Lim ,  Ngatik Cheung ,  Chi-Shun Lin

IPC分类号： G06F11/10 ,  G06F11/14 ,  G06F12/02

CPC分类号： G06F11/1068 ,  G06F11/1012 ,  G06F11/1489 ,  G06F12/0246

摘要： An encoding method for a memory storage apparatus adopting a Lien ECC scheme is provided. The memory storage apparatus comprises an ECC encoder using a Lien Code. The encoding method includes: receiving a first data or a second data which is one's complement of the first data; and performing an encoding operation based on the Lien Code by the ECC encoder. The encoding operation includes: if the first data is received, generating a first codeword according to the first data; and if the second data is received, generating a second codeword which is one's complement of the first codeword according to the second data. In addition, a memory storage apparatus using the encoding method based on the Lien Code is also provided.