公开(公告)号：US20060279981A1

公开(公告)日：2006-12-14

申请号：US11147944

申请日：2005-06-08

申请人： Zhitao Diao ,  Yiming Huai ,  Mahendra Pakala ,  Zhenghong Qian

发明人： Zhitao Diao ,  Yiming Huai ,  Mahendra Pakala ,  Zhenghong Qian

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元，多个字线和多个位线。 多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。 多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。 多个磁性元件中的每一个具有第一端和第二端。 所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。 多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

公开(公告)号：US20060128038A1

公开(公告)日：2006-06-15

申请号：US11294766

申请日：2005-12-05

申请人： Mahendra Pakala ,  Thierry Valet ,  Yiming Huai ,  Zhitao Diao

发明人： Mahendra Pakala ,  Thierry Valet ,  Yiming Huai ,  Zhitao Diao

IPC分类号： H01L21/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/302 ,  H01F41/325

摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和间隔层。 间隔层是绝缘的并且具有有序晶体结构。 间隔层还被构造成允许隧道穿过间隔层。 在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。 在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。 在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：US20110241141A1

公开(公告)日：2011-10-06

申请号：US13160438

申请日：2011-06-14

申请人： Hide Nagai ,  Zhitao Diao ,  Yiming Huai

发明人： Hide Nagai ,  Zhitao Diao ,  Yiming Huai

IPC分类号： H01L29/82

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.

摘要翻译： 描述包括磁性元件的磁性装置。 磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。 当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。 自由层包括低饱和磁化材料。

公开(公告)号：US07982275B2

公开(公告)日：2011-07-19

申请号：US11843496

申请日：2007-08-22

申请人： Hide Nagai ,  Zhitao Diao ,  Yiming Huai

发明人： Hide Nagai ,  Zhitao Diao ,  Yiming Huai

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.

摘要翻译： 描述包括磁性元件的磁性装置。 磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。 当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。 自由层包括低饱和磁化材料。

公开(公告)号：US07663848B1

公开(公告)日：2010-02-16

申请号：US11523872

申请日：2006-09-20

申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

IPC分类号： G11B5/127

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11B5/3906 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/08

摘要： A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer. The magnetic element is configured to allow the free layer to be switched utilizing spin transfer when a write current is passed through the magnetic element.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元。 每个磁存储单元包括至少一个磁性元件。 磁性元件包括钉扎层，作为结晶绝缘体并具有第一结晶取向的阻挡层和自由层。 自由层包括第一铁磁层，第二铁磁层和第一和第二铁磁层之间的中间层。 阻挡层位于固定层和自由层之间。 第一铁磁层位于阻挡层和中间层之间，并且与第二铁磁层铁磁耦合。 中间层被配置为使得第一铁磁层具有第一晶体取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。 磁性元件配置成当写入电流通过磁性元件时允许利用自旋转移来切换自由层。

公开(公告)号：US07495303B2

公开(公告)日：2009-02-24

申请号：US11699160

申请日：2007-01-29

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul P. Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul P. Nguyen ,  Mahendra Pakala

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  H01L27/22

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. The free layer is a simple free layer. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 一种方法和系统包括在被钉扎层和自由层之间提供单个钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 自由层是一个简单的自由层。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US20070159734A1

公开(公告)日：2007-07-12

申请号：US11685723

申请日：2007-03-13

申请人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

发明人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

IPC分类号： G11B5/127

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

公开(公告)号：US07187577B1

公开(公告)日：2007-03-06

申请号：US11286083

申请日：2005-11-23

申请人： Lien-Chang Wang ,  Zhitao Diao ,  Yunfei Ding

发明人： Lien-Chang Wang ,  Zhitao Diao ,  Yunfei Ding

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

摘要翻译： 包括提供磁存储器的方法和系统。 该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。 所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。 磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。 选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

公开(公告)号：US08476723B2

公开(公告)日：2013-07-02

申请号：US13160438

申请日：2011-06-14

申请人： Hide Nagai ,  Zhitao Diao ,  Yiming Huai

发明人： Hide Nagai ,  Zhitao Diao ,  Yiming Huai

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.

摘要翻译： 描述包括磁性元件的磁性装置。 磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。 当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。 自由层包括低饱和磁化材料。

公开(公告)号：US07859034B2

公开(公告)日：2010-12-28

申请号：US12425370

申请日：2009-04-16

申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.

摘要翻译： 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。