摘要:
Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.
摘要:
Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.
摘要:
Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.
摘要:
Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.
摘要:
Various embodiments of the present invention are generally directed to an apparatus and associated method for a non-volatile memory with a hybrid index tag array. In accordance with some embodiments, a memory device has a word memory array formed of non-volatile resistive sense memory (RSM) cells, a first index array formed of volatile content addressable memory (CAM) cells, and a second index array formed of non-volatile RSM cells. The memory device is configured to output word data from the word memory array during a data retrieval operation when input request data matches tag data stored in the first index array, and to copy tag data stored in the second index array to the first index array during a device reinitialization operation.
摘要:
A system, method, and apparatus for collecting data streams, such as data packets, on a network, such as the Internet, are disclosed. Evaluation of the metadata and the relationships can be performed algorithmically, as predetermined by an analyst or as provided as preset options by the network monitoring system (NMS). The collected data associated with the users of the network may be accessed by multiple analysts belonging to different groups having a NMS of their own. The system may allow access to multiple analysts belonging to separate groups by parsing through a single instance of the stored data. Multiple analysts belonging to different groups may allow to access to a single instance of the stored data.
摘要:
Timers in push-to-talk (PTT) enabled client devices are used to regulate packet traffic to and from the client device. In one embodiment, during a real-time multimedia session, a suspend timer is activated during data communication channel suspension. The session is held until suspend timer times out. If the data communication channel is restored before the suspend timer times out, the session is not reset, and the user is still able to continue the session with little noticeable loss of service. If the suspend timer times out, and the data communication channel has not been restored, then the session is terminated.
摘要:
An orbital evaporator has a vertical heat transfer tube or tubes mounted in a container driven in an orbital motion. A stiff whip rod is freely movable within the tube. Its lower end rests on a horizontal plate. The orbital motion causes the rod to roll over the interior surface of the tube to distribute the liquid in a thin film and to control fouling. A set of fins is mounted on the exterior of the tube to collect and channel the condensate to improve heat transfer through the tube. The fins are preferably longitudinal and the whip rod is preferably hydrophobic. Operating the evaporator with boiling temperatures substantially below 100.degree. C. in combination with the fins and a rolling whip rod allows operation as a desalinization unit for an indefinite period of time with a high total heat transfer coefficient. The evaporator preferably also includes a degasser to control the formation of a gas barrier at the exterior surface of the tube.
摘要:
An inspecting method comprises the following steps. A plurality of defect inspection devices is formed on a wafer. Each defect inspection device comprises an insulating layer and a conductive layer stacked over the insulating layer. A defect inspection parameter is set and the wafer is scanned with an electron beam to obtain a plurality of defect signals. The number of defect signals is checked to determine if it is equal to the number of defect inspection devices. If the number of defect signals is smaller than the number of defect inspection devices, the defect inspection parameter is readjusted and the aforementioned step of performing an electron beam scanning and checking for equality between the number of defect signals and the number of defect inspection devices are repeated. The process is complete when the number of defect signals is at least equal to the number of defect inspection devices.