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    Method of measuring in situ differential emissivity and temperature
    22.
    发明授权
    Method of measuring in situ differential emissivity and temperature 有权
    测量原位差分发射率和温度的方法

    公开(公告)号：US07632012B2

    公开(公告)日：2009-12-15

    申请号：US11217884

    申请日：2005-09-01

    Applicant: Michael Twerdochlib

    Inventor： Michael Twerdochlib

    IPC: G01J5/02

    CPC classification number: G01J5/0003 ,  G01J5/524 ,  G01J5/602 ,  G01J2005/0074

    Abstract: A method for measuring the differential emissivity between two sites on the surface of a body and the temperature of the two sites. The method includes a plurality of measurements of the infrared radiation arising from each of the two sites under a number of different conditions. Some of the measurements include irradiation by external infrared radiation at a known wavelength and intensity. The infrared radiation arising from each of the sites may include emitted radiation, reflected ambient radiation, and reflected external radiation. Additionally, the temperature determined using the method described can be used to calibrate infrared imaging devices used to inspect the entire body.

    Abstract translation: 一种用于测量身体表面两个位置与两个部位的温度之间的差异发射率的方法。 该方法包括在多个不同条件下从两个位置中的每一个产生的红外辐射的多个测量。 一些测量包括以已知波长和强度的外部红外辐射照射。 从每个地点产生的红外辐射可能包括发射的辐射，反射的环境辐射和反射的外部辐射。 另外，使用所述方法确定的温度可用于校准用于检查整个身体的红外成像装置。

    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies
    23.
    发明授权
    Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies 失效
    半导体加工技术，包括辐射加热体的高温测量

    公开(公告)号：US5442727A

    公开(公告)日：1995-08-15

    申请号：US227844

    申请日：1994-04-14

    Applicant: Anthony T. Fiory

    Inventor： Anthony T. Fiory

    IPC: G01J5/10 ,  G01J5/00 ,  H05B3/62

    CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0818 ,  G01J5/0878 ,  G01J2005/0048 ,  G01J2005/0074

    Abstract: In a process for heating, e.g., a semiconductor wafer within a processing chamber, the wafer is exposed to a flux of electromagnetic radiation from lamps energized by alternating electric current. The surface temperature of the wafer is measured, and responsively, the radiation flux is controlled. The temperature measurement procedure includes collecting radiation propagating away from the wafer in a first light-pipe probe, collecting radiation propagating toward the wafer in a second light-pipe probe, and detecting radiation collected in the respective probes. This procedure further involves determining, in the signal received from each probe, a magnitude of a time-varying component resulting from time-variations of the energizing current, and combining at least these magnitudes according to a mathematical expression from which the temperature can be inferred. At least some of the radiation collected by the second probe is collected after reflection from a diffusely reflecting surface. The second probe effectively samples this radiation from an area of the diffusely reflecting surface that subtends a solid angle .OMEGA..sub.2 at the wafer surface. The first probe effectively samples radiation from an area of the wafer that subtends a solid angle .OMEGA..sub.1 at the first probe. The radiation sampling is carried out such that .OMEGA..sub.2 is at least about .OMEGA..sub.1.

    Abstract translation: 在加热过程中，例如处理室内的半导体晶片，晶片暴露于由交流电流激励的灯的电磁辐射通量。 测量晶片的表面温度，并且响应地控制辐射通量。 温度测量程序包括收集在第一光管探针中离开晶片传播的辐射，收集在第二光管探针中向晶片传播的辐射，以及检测在各个探针中收集的辐射。 该过程进一步包括在从每个探测器接收到的信号中确定由激励电流的时间变化导致的时变分量的幅度，并且根据可从其推断温度的数学表达式至少组合这些幅度 。 在从漫反射表面反射之后收集由第二探针收集的至少一些辐射。 第二探针有效地从漫反射表面的与晶片表面的立体角OMEGA 2相对的区域采样该辐射。 第一探针有效地从在第一探针处对准固体角度的OMEGA 1的晶片区域的辐射。 进行辐射采样使得OMEGA 2至少约为OMEGA 1。

    Multiwavelength pyrometer for gray and non-gray surfaces in the presence of interfering radiation
    24.
    发明授权
    Multiwavelength pyrometer for gray and non-gray surfaces in the presence of interfering radiation 失效
    在存在干扰辐射的情况下，用于灰度和非灰色表面的多波长高温计

    公开(公告)号：US5326172A

    公开(公告)日：1994-07-05

    申请号：US991403

    申请日：1992-12-14

    Applicant: Daniel L. P. Ng

    Inventor： Daniel L. P. Ng

    IPC: G01J5/00 ,  G01J5/62 ,  G01J5/52

    CPC classification number: G01J5/08 ,  G01J5/0821 ,  G01J5/0834 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0074

    Abstract: A method and apparatus for detecting the temperature of gray and non-gray bodies in the presence of interfering radiation. A gray body has a constant emissivity less than 1 and a non-gray body has an emissivity which varies with wavelength. The emissivity and reflectivity of the surface is determined over a range of wavelengths. Spectra are also measured of the extraneous interference radiation source and the surface of the object to be measured in the presence of the extraneous interference radiation source. An auxiliary radiation source is used to determine the reflectivity of the surface and also the emissivity. The measured spectrum of the surfaces in the presence of the extraneous interference radiation source is set equal to the emissivity of the surface multiplied by a Planck function containing a temperature term T plus the surface reflectivity multiplied by the spectrum of the extraneous interference radiation source. The equation is then solved for T to determine the temperature of the surface.

    Abstract translation: 一种用于在存在干扰辐射的情况下检测灰色和非灰色体的温度的方法和装置。 灰体具有小于1的恒定发射率，非灰体具有随波长变化的发射率。 在波长范围内确定表面的发射率和反射率。 在外来干涉辐射源的存在下，还测量外来干涉辐射源和待测物体表面的光谱。 辅助辐射源用于确定表面的反射率和发射率。 在外部干涉辐射源存在的情况下，表面的测量光谱被设置为等于表面的发射率乘以包含温度项T的平面函数加上表面反射率乘以外部干涉辐射源的光谱。 然后求解该方程式以确定表面的温度。

    Method of and apparatus for non-contact temperature measurement
    25.
    发明授权
    Method of and apparatus for non-contact temperature measurement 失效
    非接触式温度测量方法和装置

    公开(公告)号：US5208643A

    公开(公告)日：1993-05-04

    申请号：US594528

    申请日：1990-10-05

    Applicant: James A. Fair

    Inventor： James A. Fair

    IPC: C23C14/54 ,  G01J5/00 ,  G01J5/58

    CPC classification number: G01J5/08 ,  C23C14/541 ,  G01J5/0846 ,  G01J5/58 ,  G01J2005/0074 ,  G01J5/0007

    Abstract: The temperature and radiant energy emissivity of a semiconductor substrate or wafer undergoing processing are monitored by combining indications derived from an interferometer and the intensity of radiant energy emitted from the substrate. The radiant energy intensity is detected at adjacent maxima or minima in the intensity of the interference pattern.

    Abstract translation: 通过组合来自干涉仪的指示和从衬底发射的辐射能的强度来监测正在进行处理的半导体衬底或晶片的温度和辐射能发射率。 辐射能强度在相邻的最大值或最小值处以干涉图案的强度被检测。

    Method and apparatus for active pyrometry
    26.
    发明授权
    Method and apparatus for active pyrometry 失效
    用于高温测定的方法和装置

    公开(公告)号：US5029117A

    公开(公告)日：1991-07-02

    申请号：US342005

    申请日：1989-04-24

    Applicant: Evan E. Patton

    Inventor： Evan E. Patton

    IPC: G01J5/00

    CPC classification number: G01J5/0003 ,  G01J5/0007 ,  G01J5/08 ,  G01J5/0834 ,  G01J5/0896 ,  G01J2005/0048 ,  G01J2005/0074

    Abstract: The present invention constitutes a pyrometer device and an associated method of operation for measuring temperature based on the radiation emitted by a heated body in which increased accuracy is achieved by actively ascertaining the emittance of the body whose temperature is being measured. The pyrometer device includes a light source for intermittently illuminating the heated body and a radiation sensing mechanism for measuring the amount of light reflected and radiated by the body. The pyrometer device further includes a signal processing unit for processing the information developed by the radiation sensing mechanism and deriving the temperature of the body based on a calculated emittance factor and the amount of light radiated by the body.

    Abstract translation: 本发明构成高温计装置和相关联的操作方法，其基于由加热体发射的辐射来测量温度，其中通过主动地确定正在测量其温度的身体的发射率来实现增加的精度。 高温计装置包括用于间歇地照射加热体的光源和用于测量由身体反射和辐射的光量的辐射感测机构。 高温计装置还包括信号处理单元，用于处理由辐射检测机构开发的信息，并且基于所计算的发射因数和身体辐射的光量来导出身体的温度。

    Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
    28.
    发明授权
    Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors 失效
    在先进的灯加热快速热处理器中使用红外光谱法进行实时晶片温度测量的方法和装置

    公开(公告)号：US4956538A

    公开(公告)日：1990-09-11

    申请号：US242755

    申请日：1988-09-09

    Applicant: Mehrdad M. Moslehi

    Inventor： Mehrdad M. Moslehi

    IPC: G01J5/00

    CPC classification number: G01J5/0003 ,  G01J2005/0074

    Abstract: A first and second pyrometer (26-28) are optically coupled by a light pipe (24) to a wafer (30) in an apparatus (10). The light pipe (24) passes through a shroud (16) of a heating lamp module (14). A computer (74) is interconnected to the pyrometers (26-28) and a lamp module power supply (80). A laser (48) emits a laser beam (50) through a power meter (86) onto an infrared mirror (56) over the light pipe (24). The mirror (56) directs the beam onto wafer (30) which reflects a portion of the beam back to the infrared mirror (56). The beam is then guided to an infrared photo-detector (58) which provides, in combination with the incident laser beam power meter (86), reflectance of the wafer surface for the laser beam which is related to wafer emissivity. The spectral infrared emissivity measurement can be performed more accurately over an extended temperature range if the transmissivity of the wafer is determined by another infrared photodetector (59) and both the measured wafer reflectance and transmissivity data are used to calculate the emissivity. Wafer emissivity data and pyrometers reading data are evaluated by the computer (74) to determine the true wafer temperature in real-time and to raise or lower the power output from the power supply (80) to adjust the wafer temperature within the apparatus (10).

    Abstract translation: 在设备（10）中，第一和第二高温计（26-28）通过光管（24）光学耦合到晶片（30）。 光管（24）穿过加热灯模块（14）的护罩（16）。 计算机（74）与高温计（26-28）和灯模块电源（80）互连。 激光器（48）通过功率计（86）将激光束（50）发射到光管（24）上的红外反射镜（56）上。 反射镜（56）将光束引导到将光束的一部分反射回红外镜（56）的晶片（30）上。 然后将光束引导到红外光电检测器（58），红外光电检测器（58）与入射激光束功率计（86）组合提供与晶片发射率相关的激光束的晶片表面的反射率。 如果晶片的透射率由另一个红外光电检测器（59）确定，并且使用测量的晶片反射率和透射率数据来计算发射率，则可以在扩展的温度范围内更精确地执行光谱红外发射率测量。 计算机（74）评估晶片发射率数据和高温计读数据，以实时确定真晶片温度，并提高或降低从电源（80）输出的功率，以调节装置（10）内的晶片温度 ）。

    EMISSIVITY INDEPENDENCE TUNING
    29.
    发明公开
    EMISSIVITY INDEPENDENCE TUNING 审中-公开

    公开(公告)号：US20230392987A1

    公开(公告)日：2023-12-07

    申请号：US17832296

    申请日：2022-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Wolfgang Aderhold

    IPC: G01J5/00 ,  G01J5/80

    CPC classification number: G01J5/0003 ,  G01J5/80 ,  G01J2005/0074

    Abstract: Embodiments disclosed herein include a method of calibrating a processing tool. In an embodiment, the method comprises providing a first substrate with a first emissivity, a second substrate with a second emissivity, and a third substrate with a third emissivity. In an embodiment, the process may include running a recipe on each of the first substrate, the second substrate, and the third substrate, where the recipe includes a set of calibration attributes. In an embodiment, the method may further comprise measuring a layer thickness on each of the first substrate, the second substrate, and the third substrate. In an embodiment, the method further comprises determining if the layer thicknesses are uniform.

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