Oxide material, electrophotographic photoreceptor, process cartridge, and image forming device
    27.
    发明授权
    Oxide material, electrophotographic photoreceptor, process cartridge, and image forming device 有权
    氧化物材料,电子照相感光体,处理盒和成像装置

    公开(公告)号:US08709688B2

    公开(公告)日:2014-04-29

    申请号:US13868466

    申请日:2013-04-23

    Abstract: An oxide material including gallium, zinc and oxygen, a ratio of the number of atoms of zinc to the number of atoms of gallium (number of atoms of zinc/number of atoms of gallium) being from about 0.01 to about 0.6 and a ratio of the number of atoms of oxygen to the sum of the number of atoms of gallium and the number of atoms of zinc (number of atoms of oxygen/(number of atoms of gallium+number of atoms of zinc)) being from about 1.0 to about 1.6, is disclosed. An electrophotographic photoreceptor including a layer which includes the oxide material is also disclosed. An electrophotographic photoreceptor including a substrate; and a photosensitive layer including gallium, oxygen and zinc is also disclosed.

    Abstract translation: 包括镓,锌和氧的氧化物材料,锌的原子数与镓的原子数(锌的原子数/镓的原子数)的比例为约0.01至约0.6, 氧的原子数与镓的原子数和锌的原子数(氧原子数/(镓的原子数+锌的原子数))之和为约1.0〜约 1.6,被公开。 还公开了包括包含氧化物材料的层的电子照相感光体。 包含基底的电子照相感光体; 并且还公开了包含镓,氧和锌的感光层。

    Photoconductive layer forming radiation image taking panel and radiation image taking panel
    29.
    发明申请
    Photoconductive layer forming radiation image taking panel and radiation image taking panel 审中-公开
    光导层形成辐射图像采集板和放射图像采集板

    公开(公告)号:US20070099116A1

    公开(公告)日:2007-05-03

    申请号:US11590780

    申请日:2006-11-01

    Inventor: Kiyoteru Miyake

    Abstract: A photoconductive layer for a radiation image taking panel is formed by selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 1000 molar ppm of a chalcogenide element other than Se or selenium alloy containing 0.1 to 1000 molar ppm of monovalent metal and 0.1 to 4000 molar ppm of a V group element.

    Abstract translation: 用于放射线摄像面板的光电导层由含有0.1〜1000摩尔ppm的一价金属的硒合金和除了Se或含有0.1〜1000摩尔ppm的一价金属的0.1〜1000摩尔ppm的硫属元素元素和0.1重量% 至4000摩尔ppm的V族元素。

Patent Agency Ranking