Abstract:
A field emission display includes first and second substrates provided opposing one another with a predetermined gap therebetween; electron emission sources provided on one of the first and second substrates; an electron emission inducing assembly for inducing the emission of electrons from the electron emission sources; and an illuminating assembly provided on the substrate on which the electron emission sources are not formed, the illuminating assembly realizing images by the emission of electrons from the electron emission sources. The electron emission sources include a carbon nanotube layer and a base layer, the base layer connecting the carbon nanotube layer to the substrate and applying a voltage to the carbon nanotube layer required for the emission of electrons. Also, the carbon nanotube layer is provided on the base layer in a state substantially un-mixed with the base layer.
Abstract:
There is provided an electron emitting device including a substrate, a pair of electrodes formed on the substrate and being apart from each other, a pair of electrically conductive films formed on the electrodes, respectively, and being apart from each other, a distance between the electrically conductive films being shorter than a distance between the electrodes, and an electron emitting film formed between the electrically conductive films, the electron emitting film containing boron and at least one of carbon and nitrogen.
Abstract:
In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.
Abstract:
A method of producing a fiber, comprising the steps of introducing catalytic particles originally formed in a particle-forming chamber into an arraying chamber together with a carrier gas, to cause the catalytic particles to become arranged on a substrate disposed in the arraying chamber. A next step includes growing fibers, each including carbon as a major component, based on the catalytic particles arranged on the substrate. The fibers grow by heating the catalytic particles arranged on the substrate in an atmosphere containing carbon.
Abstract:
In a method of manufacturing matrix electron emitter arrays, each array comprising a plurality of scanning lines formed on a glass substrate and arranged in parallel with each other, a plurality of signal lines formed in a direction to cross the scanning lines and arranged in parallel with each other, and field-emission type electron emitters formed in the pixel areas which are arranged at the intersections of the scanning lines and the signal lines, a pulse voltage with a specific polarity and another pulse voltage with the reverse polarity are applied to any two of the scanning lines and current is caused to flow through electron emitters connected in series-via a signal line, thereby subjecting the conductive thin film constituting an electron emitter to a conductive activation process for forming an electron emitting section.
Abstract:
A field emission display panel device that incorporates carbon nanotube emitter layers for emitting electrons wherein the carbon nanotube layers has a smaller width than the conductive paste layers it is deposited on is disclosed. The width of the carbon nanotube layer should be less than null of the width of the conductive paste layer, or in a range between about null and null of the width of the conductive paste layer, i.e. such as a silver paste layer. The present invention novel structure prevents the overflow of the carbon nanotubes, after a curing process for the nanotubes is conducted, onto the sidewall of the conductive paste layer, and thus significantly improves the electron density projected toward the flourescent powder coating layer to produce an image with reduced electron scattering. As a result, image clarity, definition and contrast can be improved in the FED device.
Abstract:
The present invention relates to a plasma display panel comprising transparent electrodes and a dielectric layer covering said transparent electrodes on at least one substrate of a pair of substrates facing each other with a discharge space therebetween, the main constituent of the transparent electrodes is included in the dielectric layer. Further, the main constituent of the transparent electrode is indium oxide and indium oxide is included in the dielectric layer. By including the main constituent of the transparent electrodes in the dielectric layer, it is believed that the drop in conductivity caused by diffusion of the dielectric substance in the transparent electrodes during high-temperature processing is prevented.