Abstract:
An electron source 10 has an n-type silicon substrate 1, a drift layer 6 formed on one surface of the substrate 1, and a surface electrode 7 formed on the drift layer 6. A voltage is applied so that the surface electrode 7 becomes positive in polarity relevant to the substrate 1, whereby electrons injected from the substrate 1 into the drift layer 6 drift within the drift layer 6, and are emitted through the surface electrode 7. In a process for manufacturing this electron source 10, when the drift layer 6 is formed, a porous semiconductor layer containing a semiconductor nanocrystal is formed in accordance with anodic oxidation. Then, an insulating film is formed on the surface of each semiconductor nanocrystal. Anodic oxidation is carried out while emitting light that essentially contains a wavelength in a visible light region relevant to the semiconductor layer.
Abstract:
The invention relates to a method for producing a field emission display (FED) that includes a first substrate with electrodes of an anode structure and a luminescent material that at least partly covers these electrodes. The electrodes of a cathode structure are affixed on a second substrate and include field emitters. The anode structure and the cathode structure are aligned with one another and interconnected in spaced-apart disposition in a gas-tight manner along their lateral edges, except for a gas inlet opening and a gas outlet opening. The field emitters are deposited by heating only the electrodes of the cathode structure while flowing a carrier gas through the gas inlet opening and the gas outlet opening.
Abstract:
A method for manufacturing an electron source includes the steps of covering a substrate provided with a first electrode and a second electrode by a container, introducing a gas composed of a carbon compound into the container, and forming a carbon film by applying a voltage between the first electrode and the second electrode. The relationship 1/(4/Cxnull1/Cz)nullSoutnull4SactnullCin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is the conductance from the position of the substrate nearest to the gas inlet to the position of the substrate nearest to the gas outlet, Sout is the effective exhaust rate, Sact is the consumption rate of the gas, and Cz is the conductance from the substrate to the gas outlet. An apparatus for manufacturing an electron source and a method for manufacturing an image-forming apparatus are also disclosed.
Abstract:
The present invention includes field emission display backplates and methods of forming field emission display backplates. According to one aspect, the present invention provides a field emission display backplate including a substrate having a surface; an emitter which extends from the surface of the substrate; and an anode having an upper surface, a lower surface, and an opening surface which defines an opening aligned with the emitter, the opening surface includes a first portion which curves outward relative to the anode and a second portion which curves inward relative to the anode.
Abstract:
The invention relates to a field emission display constructed using an array of fibers and an orthogonal array of emitter electrodes. Each fiber in the fiber array contains an extraction electrode, spacer, a high voltage electrode and a phosphor layer. The array of emitter electrodes consists of carbon nanotube emitters attached to conductive electrodes. The emitter electrodes are separated using non-conductive fibers. A getter material in the form of a wire is placed within the array of emitter electrodes to maintain a high vacuum within the display.
Abstract:
An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.
Abstract:
An electron-emitting device in which the specific capacitance and the drive voltage are reduced, and which is capable of obtaining a finer electron beam by controlling the trajectory of emitted electrons. An electron-emitting portion of an electron-emitting member is positioned between the height of a gate and the height of an anode. When the distance between the gate and a cathode is d; the potential difference at driving the device is V1; the distance between the anode and the substrate is H; and the potential difference between the anode and the cathode is V2, then the electric field E1nullV1/d during driving is configured to be within the range from 1 to 50 times E2nullV2/H.
Abstract:
A flash discharge tube includes a pin-shaped cathode. The pin-shaped cathode has an electrode core of tungsten having a first end portion. A lead of nickel has a second end portion connected with the first end portion. In the electrode producing method, the electrode core and the lead are retained by use of respectively first and second chuck mechanisms with the first and second end portions opposed to one another. The first and second end portions are pushed on one another by moving at least one of the first and second chuck mechanisms. While the first and second end portions are pushed on one another, the first and second chuck mechanisms are supplied with electric current, so as to weld the electrode core and the lead together therewith by resistance welding.
Abstract:
It relates to a method of manufacturing an electron source. In an activation process, a set value of an activation gas partial pressure is switched at multi-stages and an application of a compensation voltage is not conducted for a predetermined period after switching of the set value. Alternatively, the activation is repeated plural times while a row wiring or a column wiring is switched, and the application of the compensation voltage is not conducted for the predetermined period after switching of the row wiring or the column wiring. Thus, activation processing can be uniformly performed for all electron emitting devices.
Abstract:
To provide a method for manufacturing an electron source having electron-emitting devices with excellent electron-emitting property arranged on a substrate and enabling an image-forming apparatus capable of displaying an image with high brightness and uniformity to be enhanced in terms of screen size and production scale. The method for manufacturing the electron source includes a step of disposing a plurality of units and a plurality of wirings connected to the plurality of units on a substrate, each unit including a polymer film and a pair of electrodes with the polymer film interposed therebetween, and a step of forming electron-emitting devices from the plurality of units by repeatedly performing a process including a selecting substep of selecting a desired number of units from the plurality of units, a resistance-reducing substep of reducing resistance of the polymer films of the selected units and a gap-forming substep of forming a gap in each of the films formed by the resistance-reducing substep.