Abstract:
A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.
Abstract:
Phosphor layers are formed on the inner surface of a face plate. An electron source device that emits electrons to excite the phosphor layers is provided on the inner surface of a base plate. The electron source device comprises an alumina substrate that has a number of small through holes. Electron-emitting material is buried in the through holes. A reference electrode is formed on the lower surface of the alumina substrate and contacts the electron-emitting material. A gate electrode is formed on the upper surface of the substrate and insulated from the electron-emitting material. The gate electrode is configured to concentrate an electron field of the electron-emitting material by virtue of an voltage applied between the reference electrode and the gate electrode, thereby to cause the electron-emitting material to emit electrons toward the phosphor layers.
Abstract:
To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.
Abstract:
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
Abstract:
An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.
Abstract:
A manufacturing method of forming at low costs a surface conduction electron-emitting device by which microminiaturization can be easily realized and electron-emitting characteristics which are uniform over a large area can be obtained is provided. A resin pattern with ion-exchange performance is formed on a substrate, a solution containing a metal component is absorbed to the resin pattern portion by using a deionization reaction, thereafter, the resin pattern is baked to thereby form an electroconductive thin film, and a forming operation is executed to the obtained electroconductive thin film, thereby manufacturing the surface conduction electron-emitting device.
Abstract:
In this invention, protrusions are formed on a substrate such as silicon and quartz glass, and catalytic metal of transition element, such as nickel, iron and cobalt are coated on the substrate, and carbon nanotubes are grown by hot-filament chemical vapor deposition or microwave-plasma enhanced chemical vapor deposition under an application of negative voltage to the substrate. Where the substrate is heated. In these methods, carbon nanotubes can be selectively grown from the apex of protrusions. As a substrate, silicon probe for scanning probe microscopy (SPM) can be used. The carbon nanotube probe can be applied to high resolution SPM probe for imaging a precise topographic image.
Abstract:
Multilayer cathode backplate structures are provided for use with a field emitter in display panels. Processes for making the structures are also disclosed. The backplate structures are made of a plurality of electrodes separated by one or more patterned layers of a dielectric composition, each said patterned layer being formed by firing a thick film dielectric composition which has been patterned by diffusion patterning.
Abstract:
In manufacturing surface conduction electron-emitting devices, a polymer thin film is arranged to connect a pair of electrodes and then transformed into a low resistivity film (carbon film) by irradiating the polymer film with an energy beam. The energy beam irradiation is scanned over the polymer films plural times so that heat due to the energy beam irradiation does not affect other members which constitute the device and also the processing time for carbonization of polymer film is reduced.
Abstract:
A method for making an electrode structure and an electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode.