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公开(公告)号：US11632509B2
公开(公告)日：2023-04-18
申请号：US17249434
申请日：2021-03-02
发明人： Shankar Ramakrishnan
IPC分类号： H04N5/365 , H04N5/3745 , H04N5/378
摘要： An image sensor may include an array of image pixels arranged in rows and columns. Each column of pixels may be coupled to current source transistors and a threshold voltage mitigation circuit. The threshold voltage mitigation circuit may include a long p-channel device for producing a reference current for the current source transistors. The mitigation circuit also includes an autozero transistor and a sampling transistor for passing a global control voltage to the current source transistors. The global control voltage may be generated using a control voltage generator that includes current mirroring circuits and a replica of the current source transistors and the threshold voltage mitigation circuit.
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公开(公告)号：US11632505B2
公开(公告)日：2023-04-18
申请号：US17290035
申请日：2019-11-11
发明人： Hongbo Zhu , Shin Kitano
IPC分类号： H04N5/351 , H04N5/3745 , H04N5/361
摘要： In a solid-state image sensor that detects presence or absence of an address event, erroneous detection of the address event is suppressed.
Each of a plurality of pixels executes detection processing for detecting whether or not a change amount of an incident light amount exceeds a predetermined threshold, and outputting a detection result. An abnormal pixel determination unit determines whether or not each of the plurality of pixels has an abnormality, and enables a pixel without an abnormality and disables a pixel with an abnormality. A control unit performs control for causing the enabled pixel to execute detection processing and control for fixing the detection result of the disabled pixel to a specific value.-
公开(公告)号：US11627270B2
公开(公告)日：2023-04-11
申请号：US17687764
申请日：2022-03-07
发明人： Takahiko Inada
IPC分类号： H04N5/3745 , H04N5/378 , H04N5/372 , H04N5/361 , H04N5/376
摘要： An image sensor includes a pixel array; a logic circuit configured to convert an image signal generated from the pixel array during a first period into image data; and a memory. The image data may be written in the memory during a second period, of which at least a portion overlaps the first period. The logic circuit may write dummy data in the memory during a third period overlapping the first period and not overlapping the second period.
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24.发明授权公开(公告)号：US11627268B2
公开(公告)日：2023-04-11
申请号：US17309344
申请日：2019-11-11
发明人： Hongbo Zhu
IPC分类号： H04N5/3745 , H04N5/378
摘要： To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.
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公开(公告)号：US11627265B2
公开(公告)日：2023-04-11
申请号：US17036006
申请日：2020-09-29
发明人： Hoyong Na , Shinyeol Choi , Kyuik Cho
摘要： An image sensor includes a pixel array, a row driver, a detector, an analog-to-digital converter and a controller. The pixel array includes a pixel area including a pixel and a dummy area including a monitoring circuit. The dummy area is disposed on a same substrate as the pixel area. The dummy area is disposed adjacent to the pixel area. The row driver is configured to output a driving signal to the pixel and the monitoring circuit. The detector is configured to receive a monitoring signal from the monitoring circuit. The analog-to-digital converter is configured to receive an analog signal corresponding to an incident light from the pixel and to convert the analog signal to a digital signal. The controller is configured to control the row driver and the analog-to-digital converter.
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26.发明申请公开(公告)号：US20230096575A1
公开(公告)日：2023-03-30
申请号：US18071083
申请日：2022-11-29
申请人： SK hynix Inc.
发明人： Hyeon June KIM
IPC分类号： H04N5/357 , H04N5/3745 , H04N5/369 , G05F3/26
摘要： Disclosed is an image sensing device including a current supply circuit coupled between a supply terminal of a first voltage and a pair of output terminals, an input circuit coupled between the pair of output terminals and a common node, and suitable for receiving a pixel signal and a ramp signal, and a mirroring circuit coupled between the common node and a supply terminal of a second voltage, and suitable for compensating for an operating current, which flows between the common node and the supply terminal of the second voltage, based on a reference current when generating the operating current by mirroring the reference current.
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公开(公告)号：US11616510B2
公开(公告)日：2023-03-28
申请号：US17345525
申请日：2021-06-11
申请人： SK hynix Inc.
发明人： Eun Jun Kim
摘要： A ramp voltage generator includes: a ramping cell array including a plurality of ramping current cells; a calibration cell array including a plurality of calibration current cells; and a current-voltage converter suitable for converting a current supplied from activated ramping current cells among the ramping current cells and activated calibration current cells among the calibration current cells into a voltage to generate a ramp voltage.
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28.发明申请公开(公告)号：US20230085900A1
公开(公告)日：2023-03-23
申请号：US17935343
申请日：2022-09-26
发明人： Atsumi Niwa , Yusuke Oike
IPC分类号： H04N5/3745 , H04N5/353 , H04N5/345
摘要： An object is to reduce a circuit scale in a solid-state imaging element that detects an address event.
The solid-state imaging element is provided with a plurality of photoelectric conversion elements, a signal supply unit, and a detection unit. In this solid-state imaging element, each of the plurality of photoelectric conversion elements photoelectrically converts incident light to generate a first electric signal. Furthermore, in the solid-state imaging element, the detection unit detects whether or not a change amount of the first electric signal of each of the plurality of photoelectric conversion elements exceeds a predetermined threshold and outputs a detection signal indicating a result of the detection result.-
公开(公告)号：US20230081441A1
公开(公告)日：2023-03-16
申请号：US17550578
申请日：2021-12-14
申请人： SK hynix Inc.
发明人： Toshiaki NAGAI
IPC分类号： H04N5/378 , H04N5/3745 , H04N5/345
摘要： A method for operating an image sensor with a 4 rows×4 columns pixel group including 4 sub-pixel groups each including 4 pixels of 2 rows×2 columns includes: selecting and reading out a first pixel among 4 pixels in a first row of the pixel group; selecting and reading out, in a second row of the pixel group, a second pixel from a sub-pixel group other than a sub-pixel group including the first pixel; selecting and reading out, in a third row of the pixel group, a third pixel from a column other than a column including the first pixel and a column including the second pixel; and selecting and reading out, in a fourth row of the pixel group, a fourth pixel from a column other than the columns including the first pixel, the second pixel and the third pixel.
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公开(公告)号：US11606521B2
公开(公告)日：2023-03-14
申请号：US17249580
申请日：2021-03-05
IPC分类号： H04N5/378 , H04N5/374 , H04N5/369 , H04N5/3745
摘要： An image sensor may include a pixel array having pixels arranged in rows and columns, column readout circuitry, and control circuitry. Column readout circuitry may include corresponding readout circuits each coupled to a corresponding column path for a respective column of pixels. The readout circuits may each include signal processing circuits such as correlated double sampling circuitry and analog-to-digital converter circuitry. To reduce peak-to-average power ratio, during the signal processing operations for each pixel row, the control circuitry may control the signal processing circuits to perform time-domain multiplexing across the pixel columns to activate the signal processing circuits at varied times within the row time. If desired, the pattern of time-domain multiplexing may be varied across the signal processing operations for different pixel rows and/or for different image frames.
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