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1.发明授权公开(公告)号：US11711634B2
公开(公告)日：2023-07-25
申请号：US17287303
申请日：2019-09-18
发明人： Hongbo Zhu
摘要： To suppress voltage variations due to transistor switching noise in a solid-state image sensor including a transistor that initializes a differentiating circuit.
A capacitance supplies a charge corresponding to an amount of variation in a predetermined pixel voltage to a predetermined input terminal. A voltage output unit outputs, as an output voltage, a voltage corresponding to an input voltage at the input terminal from a predetermined output terminal. A reset transistor supplies one of a positive charge or a negative charge during a predetermined period to control the output voltage to an initial value in a case where initialization is instructed. A charge supply unit supplies the other of the positive charge or the negative charge when the predetermined period elapses.-
2.发明授权公开(公告)号：US11832013B2
公开(公告)日：2023-11-28
申请号：US18178091
申请日：2023-03-03
发明人： Hongbo Zhu
IPC分类号： H04N25/772 , H04N25/75
CPC分类号： H04N25/772 , H04N25/75
摘要： To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.
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3.发明授权公开(公告)号：US11622086B2
公开(公告)日：2023-04-04
申请号：US16964666
申请日：2018-12-04
发明人： Yutaka Inaoka , Hongbo Zhu , Takafumi Takatsuka
IPC分类号： H04N5/351 , H01L27/146
摘要： To reduce power consumption in a solid-state image sensor that detects weak light.
The solid-state image sensor includes a photodiode, a resistor, a measuring unit, and a control unit. The photodiode photoelectrically converts incident light and outputs a photocurrent. The resistor drops a potential of one end of the photodiode to a value lower than a power supply potential every time a photocurrent is output. The measuring unit measures illuminance of the incident light on the basis of a frequency of dropping of the potential of one end. The control unit controls the power supply potential to a lower value as the measured illuminance is higher.-
4.发明授权公开(公告)号：US11330202B2
公开(公告)日：2022-05-10
申请号：US16964059
申请日：2018-12-14
发明人： Yasuhisa Tochigi , Takafumi Takatsuka , Hongbo Zhu
IPC分类号： H04N5/225 , H04N5/353 , H04N5/3745
摘要： To reduce power consumption in a solid-state image sensor that measures a time. The solid-state image sensor includes a count unit, a count control unit, a clock unit, and an estimation unit. The count unit counts the number of times a photon has been incident within a predetermined exposure period, and outputs a count value. The count control unit performs control to stop the count unit and performs a request of time information in a case where the count value has reached a predetermined value before the predetermined exposure period elapses. The clock unit measures a time and outputs the time information in response to the request. The estimation unit estimates the number of incident times of a photon within the predetermined exposure period on the basis of the output time information.
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公开(公告)号：US11228726B2
公开(公告)日：2022-01-18
申请号：US17116459
申请日：2020-12-09
发明人： Hongbo Zhu , Mamoru Sato , Akihiko Kato
IPC分类号： H04N5/3745 , H04N5/357 , H04N5/378
摘要： An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.
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公开(公告)号：US20210409625A1
公开(公告)日：2021-12-30
申请号：US17290035
申请日：2019-11-11
发明人： Hongbo Zhu , Shin Kitano
IPC分类号： H04N5/351 , H04N5/3745
摘要： In a solid-state image sensor that detects presence or absence of an address event, erroneous detection of the address event is suppressed.
Each of a plurality of pixels executes detection processing for detecting whether or not a change amount of an incident light amount exceeds a predetermined threshold, and outputting a detection result. An abnormal pixel determination unit determines whether or not each of the plurality of pixels has an abnormality, and enables a pixel without an abnormality and disables a pixel with an abnormality. A control unit performs control for causing the enabled pixel to execute detection processing and control for fixing the detection result of the disabled pixel to a specific value.-
公开(公告)号：US10887538B2
公开(公告)日：2021-01-05
申请号：US16340925
申请日：2017-10-17
发明人： Hongbo Zhu , Mamoru Sato , Akihiko Kato
IPC分类号： H04N5/3745 , H04N5/378 , H04N5/357
摘要： An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.
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公开(公告)号：US20230358608A1
公开(公告)日：2023-11-09
申请号：US18332215
申请日：2023-06-09
发明人： Hongbo Zhu , Kazuki Hizu , Takafumi Takatsuka , Yusuke Oike , Jun Ogi , Yoshiaki Tashiro
CPC分类号： G01J1/44 , G01J11/00 , H03K23/58 , H01L31/02027 , G01J2001/448 , G02B5/20
摘要： A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.
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公开(公告)号：US20230179880A1
公开(公告)日：2023-06-08
申请号：US17992227
申请日：2022-11-22
发明人： Yutaka Inaoka , Hongbo Zhu , Takafumi Takatsuka
IPC分类号： H04N25/50 , H01L27/146
CPC分类号： H04N25/50 , H01L27/14643 , H01L27/14627
摘要： To reduce power consumption in a solid-state image sensor that detects weak light.
The solid-state image sensor includes a photodiode, a resistor, a measuring unit, and a control unit. The photodiode photoelectrically converts incident light and outputs a photocurrent. The resistor drops a potential of one end of the photodiode to a value lower than a power supply potential every time a photocurrent is output. The measuring unit measures illuminance of the incident light on the basis of a frequency of dropping of the potential of one end. The control unit controls the power supply potential to a lower value as the measured illuminance is higher.-
公开(公告)号：US11632505B2
公开(公告)日：2023-04-18
申请号：US17290035
申请日：2019-11-11
发明人： Hongbo Zhu , Shin Kitano
IPC分类号： H04N5/351 , H04N5/3745 , H04N5/361
摘要： In a solid-state image sensor that detects presence or absence of an address event, erroneous detection of the address event is suppressed.
Each of a plurality of pixels executes detection processing for detecting whether or not a change amount of an incident light amount exceeds a predetermined threshold, and outputting a detection result. An abnormal pixel determination unit determines whether or not each of the plurality of pixels has an abnormality, and enables a pixel without an abnormality and disables a pixel with an abnormality. A control unit performs control for causing the enabled pixel to execute detection processing and control for fixing the detection result of the disabled pixel to a specific value.
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