利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

99 条记录 (耗时 0.015 秒)

    Improvements in and relating to the growth of crystalline material
    21.
    发明授权
    Improvements in and relating to the growth of crystalline material 失效
    结晶材料生长的改善和相关

    公开(公告)号：US4268483A

    公开(公告)日：1981-05-19

    申请号：US777352

    申请日：1977-03-14

    申请人： Keith S. A. Davey ,  Rowland M. Ware

    发明人： Keith S. A. Davey ,  Rowland M. Ware

    IPC分类号： C30B15/34 ,  C30B15/00 ,  C30B15/24 ,  C30B35/00 ,  H01L21/208

    CPC分类号： C30B35/002 ,  C30B15/00 ,  C30B15/24 ,  C30B29/66 ,  Y10S117/90 ,  Y10T117/1036 ,  Y10T117/1044

    摘要： Apparatus is described for controlling the crystallization of semi-conductor materials involving the use of a shape forming member or die having a passage within which the crystallization interface is located and kept during the growth process. Techniques are disclosed for reducing the angle of contact measured outside the liquid between the melt liquid within the passage and the material forming the wall of the passage. The basic technique involves the formation of a rough surface typically by machining ridges in the surface of the passage. Formulae are derived for determining the maximum elemental spacing between ridges and the minimum depth of the grooves therebetween so that a liquid melt surface is supported wholly by surface tension forces between the ridges.Examples of spacing and depth parameters for various melt/die material combinations are given.Differential elemental spacing from one region of a die surface to another is employed so as to reduce the surface working requirements to the minimum.Composite dies in which a fluid under pressure additionally supports the melt liquid surface are also described.

    摘要翻译： 描述了用于控制半导体材料的结晶的装置，其涉及使用具有通道的成形构件或模具，在该通道中，结晶界面在其中在生长过程中被定位和保持。 公开了用于减小在通道内的熔融液体和形成通道壁的材料之间的液体外部测量的接触角的技术。 基本技术包括通常通过在通道的表面中加工脊来形成粗糙表面。 导出公式用于确定脊之间的最大元素间距和它们之间的槽的最小深度，使得液体熔体表面完全由脊之间的表面张力支撑。 给出了各种熔体/模具材料组合的间距和深度参数的示例。 使用从模具表面的一个区域到另一个区域的差分元素间距，以将表面工作要求降至最低。 还描述了其中压力下的流体另外支撑熔融液体表面的复合模具。

    Crystal growth
    22.
    发明授权
    Crystal growth 失效
    晶体生长

    公开(公告)号：US4211600A

    公开(公告)日：1980-07-08

    申请号：US637309

    申请日：1975-12-03

    申请人： Michael Cole

    发明人： Michael Cole

    IPC分类号： C30B15/34 ,  C30B15/00 ,  C30B15/08 ,  C30B15/24 ,  C30B27/02 ,  H01L21/208 ,  B01J17/18

    CPC分类号： C30B27/02 ,  C30B15/005 ,  C30B15/08 ,  C30B15/24 ,  Y10S117/90 ,  Y10S117/91

    摘要： Thin strip crystals are grown by pulling the growing crystal from the melt, through a thin slit, the walls of which are not wetted by the melt. The stability of growth at the edges of the strip is achieved by maintaining the pressure of the melt adjacent the interface between crystal and melt above a critical level which is such as to cause the meniscus of the melt to be convex on all sides of the growing crystal. The critical pressure is defined as2S/b+.sqroot.2SzgwhereS is the surface tension of the crystallizable materialb is the thickness of the slitz is the density of the meltg is the acceleration due to gravity;and the depth of the slit is at least (2S/zg).sup.1/2, preferably (32S/zg).sup.1/2 to ensure that a pressure exceeding the critical pressure can be developed and maintained without the liquid spilling out of the slit. The walls of the slit can be parallel or divergent in the direction in which the crystal is pulled, this divergence being necessary with certain materials. An arrangement is disclosed containing a head of the melt for creating the required pressure. An alternative arrangement is disclosed in which actuating devices, such as hydraulic piston and cylinder arrangements, create the pressure.

    摘要翻译： 通过从熔体中拉出生长的晶体，通过薄的狭缝（其壁不被熔体润湿）来生长薄带晶体。 通过将熔体附近的晶体和熔体之间的界面的压力保持在临界水平以上，以使熔体的弯液面在生长的所有侧面上凸起来实现条带边缘处的生长的稳定性 水晶。 临界压力定义为2S / b + 2ROOT 2Szg其中S是可结晶材料的表面张力b是狭缝的厚度z是熔体的密度g是由重力引起的加速度; 并且狭缝的深度至少为（2S / zg）1/2，优选为（32S / zg）1/2，以确保能够显着提高超过临界压力的压力，而不会使液体从缝隙中流出。 狭缝的壁可以在拉伸晶体的方向上平行或发散，这种偏差对于某些材料是必需的。 公开了一种用于产生所需压力的熔体头部的装置。 公开了一种替代方案，其中诸如液压活塞和气缸装置的致动装置产生压力。

    Silicon manufacture
    26.
    发明授权
    Silicon manufacture 失效
    硅制造

    公开(公告)号：US3996094A

    公开(公告)日：1976-12-07

    申请号：US537981

    申请日：1975-01-02

    申请人： I. Arnold Lesk

    发明人： I. Arnold Lesk

    IPC分类号： C30B13/08 ,  C30B13/24 ,  C30B15/00 ,  C30B15/02 ,  C30B15/24 ,  C30B29/64 ,  B01J17/18 ,  B01J17/08

    CPC分类号： C30B15/24 ,  C30B13/08 ,  C30B13/24 ,  C30B15/00 ,  C30B15/02 ,  C30B29/60

    摘要： A method of producing monocrystalline semiconductor material in web form which provides the steps of providing a web of polycrystalline semiconductor material having a width which is much greater than its thickness, providing a monocrystalline semiconductor material seed having the same relative dimensions as the polycrystalline material source, providing one or more semiconductor material shaping members, contacting the source, the seed and the shaping member and heating the interface therebetween preferentially to produce a molten zone, moving said monocrystalline semiconductor material seed away from said molten zone as monocrystalline semiconductor material is formed thereon.

    摘要翻译： 一种以网状形成单晶半导体材料的方法，其提供了提供宽度远大于其厚度的多晶半导体材料的网状物的步骤，提供具有与多晶材料源相同的相对尺寸的单晶半导体材料种子， 提供一个或多个半导体材料成形构件，使源，种子和成形构件接触并且优先地加热它们之间的界面，以产生熔融区，使单晶半导体材料种子远离所述熔融区移动，作为其上形成的单晶半导体材料。