公开(公告)号：US12279229B2

公开(公告)日：2025-04-15

申请号：US17680124

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Anil Agiwal ,  Soenghun Kim

IPC: H04W68/02 ,  H04W4/90 ,  H04W72/23 ,  H04W74/0833 ,  H04W76/28

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. According to embodiment, the method comprises identifying whether a timer related with a small data transmission (SDT) procedure is running at the UE in a radio resource control (RRC) inactive state, while the timer is running, performing at least one of monitoring of a system information (SI) change indication or an emergency notification in any paging occasion at least once per a discontinuous reception (DRX) cycle and obtaining at least one of the SI change indication or the emergency notification, based on a result of the monitoring.

公开(公告)号：US12279058B2

公开(公告)日：2025-04-15

申请号：US18118307

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H04N5/335 ,  H04N25/709 ,  H04N25/78

Abstract: An image sensor includes: a pixel including a boosting capacitor with one electrode connected to a first node to which a charge generated from a photoelectric element is transmitted, and outputting a pixel voltage based on the first node; a row driver outputting a reset-signal that resets the first node, a boosting control-signal applied to the other electrode, and a transmission-signal transmitting the charge to the first node; a read-out-circuit receiving the pixel voltage as a first-signal before the transmission-signal is output to the pixel, and receiving the pixel voltage as a second-signal after the transmission-signal is output to the pixel. A controller controlling the row driver to change the boosting control-signal from a first-level to a second-level lower than the first-level after changing the reset-signal from an enable to a disable, and controlling the read-out-circuit to receive the first-signal and the second-signal during which the boosting control-signal is at the second-level.

公开(公告)号：US12278676B2

公开(公告)日：2025-04-15

申请号：US18160582

申请日：2023-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duho Chu ,  Myeongsu Oh ,  Hojin Jung ,  Changmin Kim

IPC: H04B7/06 ,  H04B1/44 ,  H04B7/0404 ,  H04B17/10 ,  H04M1/02

Abstract: An electronic device is provided. The electronic device includes a first antenna, a second antenna segmented from the first antenna, a switch selectively coupled to the first antenna and the second antenna, a front end module connected to the switch, and a radio frequency (RF) communication circuit, wherein the RF communication circuit controls to communicate using the first antenna, determines whether radiation power through the first antenna is equal to or greater than a predetermined value, and if the radiation power through the first antenna is greater than or equal to the predetermined value, checks the in-phase quadrature phase (IQ) value of the first antenna, determines whether the IQ value corresponds to a switching condition of the second antenna, and if the IQ value corresponds to the switching condition of the second antenna, may switch the first antenna to the second antenna.

公开(公告)号：US12278285B2

公开(公告)日：2025-04-15

申请号：US18239677

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/78 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes a plurality of channel layers disposed on an active region of a substrate and spaced apart from each other in a first direction, a first gate structure surrounding the plurality of channel layers, first source/drain regions disposed on the active region on both lateral sides of the first gate structure and contacting the plurality of channel layers and spaced apart from each other in a second direction, an element isolation layer disposed on an upper portion of the first gate structure, a semiconductor layer disposed on the element isolation layer and having a vertical region extending in the first direction and including second source/drain regions spaced apart from each other in the first direction, and a second gate structure disposed to surround a portion of the vertical region. The semiconductor device further includes first to fourth contact plugs.

公开(公告)号：US12278260B2

公开(公告)日：2025-04-15

申请号：US17407653

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Na ,  Kiyoung Lee ,  Jooho Lee ,  Myoungho Jeong

IPC: H01G4/30 ,  H01L49/02 ,  H10N70/00 ,  H10N70/20

Abstract: A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

公开(公告)号：US12278222B2

公开(公告)日：2025-04-15

申请号：US18338372

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanggyoo Jung ,  Chulwoo Kim ,  Hyo-Chang Ryu ,  Yun Seok Choi

IPC: H01L25/16 ,  H01L21/48 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L23/498 ,  H01L23/528 ,  H01L23/538 ,  H01L25/00

Abstract: A semiconductor package may include a package substrate, a first interposer substrate mounted on the package substrate, and a first semiconductor chip disposed on the first interposer substrate. The first interposer substrate may include a first base layer, a second base layer disposed on the first base layer, circuit patterns provided in each of the first base layer and the second base layer, and an integrated device embedded in the first base layer and connected to at least one of the circuit patterns. A top surface of the first base layer may contact a bottom surface of the second base layer.

公开(公告)号：US12277995B2

公开(公告)日：2025-04-15

申请号：US17988797

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Young Chun ,  Minjae Seo ,  Moosung Kim

IPC: G11C7/10 ,  G11C7/12 ,  G11C7/20

Abstract: A non-volatile memory device includes: a memory cell; a bit line connected to the memory cell; a first cross coupled inverter for storing data sensed from the memory cell through a sensing node connected to the bit line; a first transistor and a second transistor respectively connected to respective ends of the first cross coupled inverter and respectively transmitting a ground voltage to respective ends of the first cross coupled inverter; and a control circuit for operating the first transistor and the second transistor at least once for at least one of an initialize period in which the sensing node is discharged and a precharge period in which the bit line is precharged.

公开(公告)号：US12277976B2

公开(公告)日：2025-04-15

申请号：US17941570

申请日：2022-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjun Yoon ,  Jinwoo Park

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/08 ,  G11C16/30 ,  G11C16/34

Abstract: Provided are a non-volatile memory device, a storage device including the same, and a method of performing a programming operation on the same. The method includes performing a program operation including applying a desired first program voltage to a selected word line of the memory device, the selected word line including a plurality of memory cells, performing a verification operation including sensing a first sensing value corresponding to an output of the selected word line based on a first verify voltage, and counting a number of on-cells of the selected word line based on the first sensing value to determine a first count value, determining whether a first program state of the selected word line has been verified based on the first count value and at least one reference value, and setting a second program voltage based on results of the determining whether the first program state has been verified.

公开(公告)号：US12277961B2

公开(公告)日：2025-04-15

申请号：US18371696

申请日：2023-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngnam Hwang

IPC: G11C11/22 ,  G11C5/06 ,  H10B51/10 ,  H10B51/20 ,  H10B51/40

Abstract: A semiconductor device includes memory cells connected to word lines, bit lines, and one source line, a row decoder connected to the word lines, and a sense amplifier circuit connected to the bit lines. In a program operation for two or more selected memory cells, a reference voltage is applied to the one source line, the sense amplifier circuit inputs a selected voltage to one selected bit line connected to the selected memory cells, and the row decoder inputs, to selected word lines connected to respective ones of the selected memory cells, a first program voltage lower than the reference voltage or a second program voltage higher than the reference voltage. Each of the memory cells includes a ferroelectric layer in which at least one of a polarization direction and a polarization degree changes depending on a voltage input to each of the word lines.

公开(公告)号：US12277923B2

公开(公告)日：2025-04-15

申请号：US17990358

申请日：2022-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungdo Choi ,  Kyoungbo Min ,  Sooyeon Park

IPC: G10K11/178 ,  H04R1/10

Abstract: An electronic apparatus includes an inner microphone provided on a first surface of the electronic apparatus; an outer microphone disposed on a second surface opposite the first surface; and a processor configured to: receive a voice signal of a counterpart and a voice signal of a wearer of the electronic apparatus that are input through the inner microphone and the outer microphone, based on a size of the voice signal of the wearer input through the inner microphone being greater than or equal to a predetermined threshold, remove the voice signal of the wearer input through the outer microphone based on the voice signal of the wearer input through the inner microphone, and amplify the voice signal of the counterpart input through the outer microphone and from which the voice signal of the wearer is removed and output the amplified voice signal, wherein the size of the voice signal of the wearer input through the inner microphone is greater than a size of the voice signal of the wearer input through the outer microphone.