-
381.发明申请公开(公告)号：US20210280424A1
公开(公告)日：2021-09-09
申请号：US17190722
申请日：2021-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Simone RASCUNA' , Paolo BADALA' , Anna BASSI , Mario Giuseppe SAGGIO , Giovanni FRANCO
Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.
-
公开(公告)号：US20210276044A1
公开(公告)日：2021-09-09
申请号：US17191475
申请日：2021-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Federico VERCESI , Alessandro DANEI , Giorgio ALLEGATO , Gabriele GATTERE , Roberto CAMPEDELLI
Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.
-
公开(公告)号：US11112268B2
公开(公告)日：2021-09-07
申请号：US15688152
申请日：2017-08-28
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Leo , Alessia Cagidiaco , Marco Catellano
Abstract: Disclosed herein is a method including receiving multi-axis accelerometer data representing a potential step taken by a user of an electronic device. The method also includes determining whether the potential step represented by the multi-axis accelerometer data is a false. This determination is made by calculating statistical data from the multi-axis accelerometer data, and applying a decision tree to the statistical data to perform a cross correlation that determines whether the potential step is a false positive. If the potential step is not a false positive, a step detection process is performed to determine whether the potential step is a countable step and, if the potential step is found to be a countable step, a step counter is incremented.
-
公开(公告)号：US20210270699A1
公开(公告)日：2021-09-02
申请号：US17318831
申请日：2021-05-12
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Piazza , Antonio Canciamilla , Piero Orlandi , Luca Maggi
IPC: G01M11/00 , G02B6/293 , G01M11/02 , G01R31/3185 , G01R31/317
Abstract: A method of testing a photonic device includes providing a plurality of optical test signals at respective inputs of a first plurality of inputs of an optical input circuit located on a substrate, combining the plurality of optical test signals into a combined optical test signal at an output of the optical input circuit, transmitting the combined optical test signal through the output to an input waveguide of an optical device under test, the optical device under test being located on the substrate, and measuring a response of the optical device under test to the combined optical test signal. Each of the plurality of optical test signals comprises a respective dominant wavelength of a plurality of dominant wavelengths.
-
公开(公告)号：US11105836B2
公开(公告)日：2021-08-31
申请号：US16746444
申请日：2020-01-17
Inventor： Dino Costanzo , Cheng Pan Cai , Xi Yu Xu
IPC: G01R19/25 , H02P27/08 , H02M1/00 , G01R15/14 , H02M7/5387
Abstract: A three-phase load is powered by a PWM (e.g., SVPWM) driven DC-AC inverter having a single shunt-topology. A shunt voltage and a branch voltage of the inverter (across a transistor to be calibrated) are measured during a second period of each SVPWM sector, and the drain-to-source resistance of the calibrated transistor is calculated. During the fourth period of each SVPWM sector, the branch voltage is measured again, and another branch voltage across another transistor is measured. Using the drain-to-source resistance of the calibrated transistor and the voltage across the calibrated transistor measured during the fourth period, the phase current through the calibrated transistor is calculated. Using the other branch voltage measured during the fourth period and the drain-to-source resistance of its corresponding transistor (known from a prior SVPWM sector), the phase current through that transistor is calculated. From the two calculated phase currents, the other phase current can be calculated.
-
Patent Agency Ranking
公开(公告)号：US20210261403A1
公开(公告)日：2021-08-26
申请号：US17179157
申请日：2021-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Gabriele GATTERE , Francesco RIZZINI
Abstract: A MEMS inclinometer includes a substrate, a first mobile mass and a sensing unit. The sensing unit includes a second mobile mass, a number of elastic elements, which are interposed between the second mobile mass and the substrate and are compliant in a direction parallel to a first axis, and a number of elastic structures, each of which is interposed between the first and second mobile masses and is compliant in a direction parallel to the first axis and to a second axis. The sensing unit further includes a fixed electrode that is fixed with respect to the substrate and a mobile electrode fixed with respect to the second mobile mass, which form a variable capacitor.
-
公开(公告)号：US20210253419A1
公开(公告)日：2021-08-19
申请号：US17175410
申请日：2021-02-12
Applicant: STMicroelectronics S.r.l.
Inventor： Enrico Rosario ALESSI , Fabio PASSANITI
Abstract: An analysis method of a device through a MEMS sensor is provided in which the MEMS sensor includes a control unit and a sensing assembly coupled to the device. The analysis method includes acquiring, through the sensing assembly, first data indicative of an operative state of the device. Testing is performed for the presence of a first abnormal operating condition of the device. If the first abnormal operating condition of the device is confirmed, a self-test of the sensing assembly is performed to generate a quantity indicative of an operative state of the sensing assembly. The self-test includes acquiring, through the sensing assembly, second data indicative of the operative state of the sensing assembly, generating a signature according to the second data, and processing the signature through deep learning techniques to generate said quantity.
-
公开(公告)号：US11094807B2
公开(公告)日：2021-08-17
申请号：US16561670
申请日：2019-09-05
Applicant: STMicroelectronics S.r.l.
Inventor： Alberto Cattani , Alessandro Gasparini
IPC: H01L29/739 , H02M3/158 , H02M1/32 , H02M1/088
Abstract: A power MOS stage includes a first power MOS device and a second power MOS devices connected in parallel between a first node and a second node, the first power MOS device having a first voltage rating and the second power MOS device having a second voltage rating that is lower than the first voltage rating. A driver circuit is configured to drive control nodes of the first and second power MOS devices in a sequential manner when actuating the power MOS stage by actuating the first power MOS device before actuating the second power MOS device. The control nodes of the first and second power MOS devices are further driven in a sequential manner when deactuating the power MOS stage by deactuating the second power MOS device before deactuating the first power MOS device.
-
389.发明授权公开(公告)号：US11086122B2
公开(公告)日：2021-08-10
申请号：US16222027
申请日：2018-12-17
Applicant: STMicroelectronics S.r.l.
Inventor： Roberto Carminati , Massimiliano Merli , Nicolo′ Boni
Abstract: A microelectromechanical device includes a body of semiconductor material, which forms a cavity, a mobile structure, and an actuation structure. The actuation structure includes at least one first deformable element which faces the cavity and is mechanically coupled to the body and to the mobile structure, and a piezoelectric-actuation system which can be controlled so as to deform the first deformable element and cause a consequent rotation of the mobile structure. The mobile structure includes a supporting region and at least one first pillar region, the first pillar region being mechanically coupled to the first deformable element, the supporting region being set on the first pillar region and overlying at least part of the first deformable element.
-
390.发明授权公开(公告)号：US11085769B2
公开(公告)日：2021-08-10
申请号：US16243876
申请日：2019-01-09
Applicant: STMICROELECTRONICS S.R.L. , STMICROELECTRONICS, INC. , STMICROELECTRONICS INTERNATIONAL N.V.
Inventor： Carlo Valzasina , Huantong Zhang , Matteo Fabio Brunetto , Gert Ingvar Andersson , Erik Daniel Svensson , Nils Einar Hedenstierna
IPC: G01C19/5776 , G01C19/5719 , G01C19/574 , G01C19/5747
Abstract: A gyroscope includes a substrate, a first structure, a second structure and a third structure elastically coupled to the substrate and movable along a first axis. The first and second structure are arranged at opposite sides of the third structure with respect to the first axis A driving system is configured to oscillate the first and second structure along the first axis in phase with one another and in phase opposition with the third structure. The first, second and third structure are provided with respective sets of sensing electrodes, configured to be displaced along a second axis perpendicular to the first axis in response to rotations of the substrate about a third axis perpendicular to the first axis and to the second axis.
-
-
-
-
-
-
-
-
-
Search Results
5497
records
(took 0.038 seconds)
