公开(公告)号：US20210276044A1

公开(公告)日：2021-09-09

申请号：US17191475

申请日：2021-03-03

Applicant: STMicroelectronics S.r.l.

Inventor： Federico VERCESI ,  Alessandro DANEI ,  Giorgio ALLEGATO ,  Gabriele GATTERE ,  Roberto CAMPEDELLI

IPC: B06B1/06 ,  H01L41/22

Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.

公开(公告)号：US20230348258A1

公开(公告)日：2023-11-02

申请号：US18302610

申请日：2023-04-18

Applicant: STMicroelectronics S.r.l.

Inventor： Mikel AZPEITIA URQUIA ,  Enri DUQI ,  Silvia NICOLI ,  Roberto CAMPEDELLI ,  Igor VARISCO ,  Lorenzo TENTORI

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81C1/00158 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/033 ,  B81B2203/0361 ,  B81B2207/11 ,  B81C2201/014 ,  B81C2201/0156 ,  B81C2201/0177 ,  B81C2201/0169

Abstract: MEMS structure, comprising: a semiconductor body; a cavity buried in the semiconductor body; a membrane suspended on the cavity; and at least one antistiction bump completely contained in the cavity with the function of preventing the side of the membrane internal to the cavity from sticking to the opposite side, which delimits the cavity downwardly.

公开(公告)号：US20230064114A1

公开(公告)日：2023-03-02

申请号：US17821717

申请日：2022-08-23

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Roberto CAMPEDELLI ,  Luca LAMAGNA ,  Enri DUQI ,  Mikel AZPEITIA URQUIA ,  Silvia NICOLI ,  Maria Carolina TURI

IPC: B81C1/00 ,  G01L9/00

Abstract: The present disclosure is directed to a method for manufacturing a micro-electro-mechanical device. The method includes the steps of forming, on a substrate, a first protection layer of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer, a sacrificial layer of silicon oxide removable with HF; forming, on the sacrificial layer, a second protection layer of crystallized aluminum oxide; exposing a sacrificial portion of the sacrificial layer; forming, on the sacrificial portion, a first membrane layer of a porous material, permeable to HF; forming a cavity by removing the sacrificial portion through the first membrane layer; and sealing pores of the first membrane layer by forming a second membrane layer on the first membrane layer.

公开(公告)号：US20160130140A1

公开(公告)日：2016-05-12

申请号：US14982380

申请日：2015-12-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Stefano LOSA ,  Raffaella PEZZUTO ,  Roberto CAMPEDELLI ,  Matteo PERLETTI ,  Luigi ESPOSITO ,  Mikel Azpeitia URQUIA

IPC: B81C1/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。