公开(公告)号：US20250126774A1

公开(公告)日：2025-04-17

申请号：US18403930

申请日：2024-01-04

Applicant: Applied Materials, Inc.

Inventor： Chang Seok Kang ,  Sony Varghese ,  Tong Liu ,  Fredrick Fishburn

IPC: H10B12/00

Abstract: Memory devices are provided which have stacked DRAM cells, resulting in an increase in DRAM cell bit-density. In a 3D DRAM with stacked unit cell layers of one or more embodiments, it is necessary to reduce the area of a unit cell in order to increase bit density per unit area for a given number of stacked cells. In one or more embodiments, n wordlines (nWL, n is an integer≥2) share a contact pad. The shared nWLs are separated by n bitlines (BLs) to assign every cell independently one WL and one BL.

公开(公告)号：US20250125183A1

公开(公告)日：2025-04-17

申请号：US18380004

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Vijayabhaskara Venkatagiriyappa ,  Laxman Vitthalrao Deshmukh ,  Chau T. Nguyen

IPC: H01L21/687 ,  H01L21/67 ,  H05B3/00

Abstract: Apparatus and methods for cooling down a susceptor assembly are described. A heat exchange passage in a susceptor assembly thermal break transfers heat from processing gases that flow through the susceptor assembly to a cooling jacket and cools down the susceptor assembly and associated hardware.

公开(公告)号：US20250125170A1

公开(公告)日：2025-04-17

申请号：US18991285

申请日：2024-12-20

Applicant: Applied Materials, Inc.

Inventor： Michael R. Rice

IPC: H01L21/67 ,  B65G47/90 ,  G06F12/00 ,  H01L21/677 ,  H01L21/687

Abstract: A mainframe of a device fabrication system comprises a base and a plurality of facets on the base, wherein a first facet of the plurality of facets comprises a first frame comprising a first column on a first side of the first facet, a second column on a second side of the first facet, and a beam connecting the first column to the second column. The mainframe further comprises a lid over the plurality of facets, wherein the base, the lid and the plurality of facets together define an interior volume. A first replaceable interface plate is sealed to the first frame of the first facet. The first column of the first facet comprises a first channel that fluidly couples a first vacuum region associated with the first replaceable interface plate to a vacuum port.

公开(公告)号：US20250125164A1

公开(公告)日：2025-04-17

申请号：US18487895

申请日：2023-10-16

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN

IPC: H01L21/67 ,  G01D11/24 ,  G01K1/12

Abstract: The present disclosure relates to heat transfer jackets and sensor assemblies, and related methods and processing chambers, for semiconductor manufacturing. In one or more embodiments, a jacket applicable for semiconductor manufacturing includes one or more outer walls bounding a plurality of fluid channels, and an inner wall at least partially surrounded by at least one of the plurality of fluid channels. The inner wall at least partially defines a receptacle opening. The jacket includes a fluid inlet formed in at least one of the one or more outer walls, a fluid outlet formed in at least one of the one or more outer walls, and a plurality of partition walls separating the plurality of fluid channels. At least one of the plurality of partition walls intersects at least one of the one or more outer walls.

公开(公告)号：US20250125145A1

公开(公告)日：2025-04-17

申请号：US18485172

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Tianyang Li ,  Hang Yu ,  Rui Cheng ,  Deenesh Padhi ,  Woongsik Nam

IPC: H01L21/02 ,  H01J37/32

Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.

公开(公告)号：US20250122624A1

公开(公告)日：2025-04-17

申请号：US18484767

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Lori D. WASHINGTON

IPC: C23C16/458 ,  C23C16/44

Abstract: A process chamber including: a chamber body enclosing an interior volume; a substrate support disposed in the interior volume that includes a lower interior volume below the substrate support and an upper interior volume above the substrate support; a first purge gas line configured to provide a first flow of purge gas to the lower interior volume; and a gas flow ring disposed around an outer edge of the substrate support, the gas flow ring comprising: a ring-shaped body; a top surface; a bottom surface; a first overlapping portion extending from a first inner sidewall of the ring-shaped body; and a second overlapping portion extending from a second inner sidewall of the ring-shaped body. The first overlapping portion is spaced apart from and overlies the second overlapping portion to form a gas flow channel that extends from the bottom surface to the top surface of the gas flow ring.

公开(公告)号：US20250122621A1

公开(公告)日：2025-04-17

申请号：US18486291

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065

Abstract: A processing system is provided that includes a process chamber. The process chamber includes: a chamber body disposed around a process volume and a substrate support. The processing system further includes a gas supply system coupled to a gas inlet of the process chamber, the gas supply system including: a main gas line connected with the gas inlet of the process chamber. The main gas line includes a first valve configured to open and provide a gas flow path through the main gas line to the process chamber. A first process gas line is connected with the main gas line at a first connection located upstream of the first valve. A second process gas line is connected with the main gas line at a second connection located upstream of the first valve. The main gas line can be separately purged upstream and downstream of the first valve.

公开(公告)号：US12276490B2

公开(公告)日：2025-04-15

申请号：US17860335

申请日：2022-07-08

Applicant: Applied Materials, Inc.

Inventor： Mehdi Vaez-Iravani ,  Todd J. Egan ,  Gopalakrishna B. Prabhu

IPC: G01B11/06 ,  C23C14/54 ,  C23C14/58

Abstract: Implementations disclosed describe, among other things, a system and a method of scanning a substrate with a beam of light and detecting for each of a set of locations of the substrate, a respective one of a set of intensity values associated with a beam of light reflected from (or transmitted through) the substrate. The detected intensity values are used to determine a profile of a thickness of the substrate.

公开(公告)号：US20250120069A1

公开(公告)日：2025-04-10

申请号：US18905062

申请日：2024-10-02

Applicant: Applied Materials, Inc.

Inventor： Zhijun CHEN ,  Fredrick FISHBURN ,  Balasubramanian PRANATHARTHIHARAN

IPC: H10B12/00

Abstract: The present technology includes vertical cell dynamic random-access memory (DRAM) arrays with improve bit line and storage node contact resistivity and self-alignment as well as methods of making such arrays. The arrays include a plurality of bit lines arranged in a first horizontal direction and a plurality of word lines arranged in a second horizontal direction. The arrays include a plurality of channels extending in a vertical direction that is generally orthogonal to the first direction and the second horizontal direction, such that the plurality of bit lines intersect with a source/drain region of the plurality of channels, and the plurality of word lines intersect with gate regions of the plurality of channels. In addition, arrays include where a bit line, a storage node contact, or both, are formed from a metallized material.

公开(公告)号：US20250118586A1

公开(公告)日：2025-04-10

申请号：US18377752

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Arvinder Manmohan Singh Chadha

IPC: H01L21/683 ,  B23Q3/15 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate support assembly includes a cooling plate and a chuck disposed on the cooling plate. The chuck includes one or more heating electrodes, and one or more clamp electrodes to electrostatically secure the chuck to the cooling plate. Another substrate support assembly includes a cooling plate, a first puck plate bonded to the cooling plate, and a second puck plate disposed on the first puck plate. The second puck plate includes one or more clamp electrodes to electrostatically secure the second puck plate to the first puck plate.